For numerous years, INO has been developing active video rate THz imaging systems operating in the 250-750 GHz band. These systems are designed for use in application fields such as security and industrial inspection. Although such systems are already deployed in the field, standard procedures for determining key metrics of their performances such as resolution and SNR are still work in progress. To support and validate the ongoing development of our systems, proper characterization methods are needed. This article describes our development on the use of various resolution targets and measurement procedures for characterizing our FPA-based THz active imaging system prototypes operated in reflection mode (collecting energy reflected by the observed scene). We analyze and discuss the results obtained with different resolution targets such as bar charts, Siemens chart, slanted edge and point sources. The repeatability and applicability of the methods are assessed by repeating the measurement procedure and analyzing the measurement discrepancies. Our results are compared to theoretical expectations when available.
For over 28 years, INO has been developing microbolometer arrays for the infrared and Terahertz (THz) domains. INO’s microbolometer array is the key component of INO’s broadband THz cameras. Using this detector, INO has developed active Terahertz imaging systems ranging from 250 GHz to 750 GHz. See-through THz imaging is particularly well suited for security screening of persons and non-destructive inspection of objects. Materials such as cardboard, plastic, leather and denim are transparent to THz radiation and can provide insights on objects hidden from the naked eye or from infrared cameras. In addition, Terahertz provides high resolution images and is non ionizing. In particular, the frequency range of 150 – 550 GHz is of interest for its properties of see-through imaging that enable a wide variety of potential applications. In this paper, we present images obtained around 400 GHz and 200 GHz (corresponding to wavelengths of 0.76 mm and 1.52 mm). We have chosen these two wavelengths to allow for a wide range of objects and obscuring materials to be tested. The 400 GHz wavelength allows better image resolution, while the 200 GHz provides better penetration through the materials. The THz imaging system can obtain images of objects with dimensions up to 1 meter x 0.75 meter with subcentimeter resolution. To achieve this, we use diffraction-limited imaging optics with high numerical aperture and a microbolometer array detector. For each object, multiple images are acquired that are then stitched together. Each instantaneous image can be seen in real-time during the acquisition and has the same resolution as the global reconstructed image. In the context of an application, the operator does not need to wait until the scan has been completed to identify a hidden object if the size of its features is compatible with the instantaneous field-of-view. When a more global image is required, the reconstructed image shows the features of the whole object under investigation without resolution loss. Images are acquired in two different configurations: transmission and reflection. Each imaging configuration provides different information about the features inside the object as well as its composition. In summary, this paper demonstrates the potential for our THz imaging systems by providing see-through high-resolution THz images of large objects. An analysis of the impact of wavelength and imaging configuration on the image results is also provided.
We have designed and numerically simulated a novel spot size converter for coupling standard single mode fibers with 10.4μm mode field diameter to 500nm × 220nm SOI waveguides. Simulations based on the eigenmode expansion method show a coupling loss of 0.4dB at 1550nm for the TE mode at perfect alignment. The alignment tolerance on the plane normal to the fiber axis is evaluated at ±2.2μm for ≤1dB excess loss, which is comparable to the alignment tolerance between two butt-coupled standard single mode fibers. The converter is based on a cross-like arrangement of SiOxNy waveguides immersed in a 12μm-thick SiO2 cladding region deposited on top of the SOI chip. The waveguides are designed to collectively support a single degenerate mode for TE and TM polarizations. This guided mode features a large overlap to the LP01 mode of standard telecom fibers. Along the spot size converter length (450μm), the mode is first gradually confined in a single SiOxNy waveguide by tapering its width. Then, the mode is adiabatically coupled to a SOI waveguide underneath the structure through a SOI inverted taper. The shapes of SiOxNy and SOI tapers are optimized to minimize coupling loss and structure length, and to ensure adiabatic mode evolution along the structure, thus improving the design robustness to fabrication process errors. A tolerance analysis based on conservative microfabrication capabilities suggests that coupling loss penalty from fabrication errors can be maintained below 0.3dB. The proposed spot size converter is fully compliant to industry standard microfabrication processes available at INO.
INO has developed a hermetic vacuum packaging technology for uncooled bolometric detectors based on ceramic leadless chip carriers (LCC). Cavity pressures less than 3 mTorr are obtained. Processes are performed in a state-of-the art semi-automated vacuum furnace that allows for independent activation of non-evaporable thin film getters. The getter activation temperature is limited by both the anti-reflection coated silicon or germanium window and the MEMS device built on CMOS circuits. Temperature profiles used to achieve getter activation and vacuum sealing were optimized to meet lifetime and reliability requirements of packaged devices. Internal package components were carefully selected with respect to their outgassing behavior so that a good vacuum performance was obtained. In this paper, INO’s packaging process is described. The influence of various package internal components, in particular the CMOS circuits, on vacuum performance is presented. The package cavity pressure was monitored using INO’s pressure microsensors and the gas composition was determined by internal vapor analysis. Lifetime was derived from accelerated testing after storage of packaged detectors at various temperatures from room temperature to 120°C. A hermeticity yield over 80% was obtained for batches of twelve devices packaged simultaneously. Packaged FPAs submitted to standard MIL-STD-810 reliability testing (vibration, shock and temperature cycling) exhibited no change in IR response. Results show that vacuum performance strongly depends on CMOS circuit chips. Detectors packaged using a thin film getter show no change in cavity pressure after storage for more than 30 days at 120°C. Moreover, INO’s vacuum sealing process is such that even without a thin film getter, a base pressure of less than 10 mTorr is obtained and no pressure change is observed after 40 days at 85°C.
We describe the fabrication process of silicon nitride (Si3N4) based two-dimensional photonic crystals. The fabrication process mainly involves e-beam direct-write lithography and reactive ion etching. The concerned photonic crystal structures consist of a periodic arrangement of sub-micrometric holes transferred into a suspended Si3N4 membrane using a poly-methylmethacrylate resist layer as a mask. Numerical simulations based on a plane wave expansion method for 2D photonic band gap approximation were conducted to determine the design parameters of the photonic crystal membranes. Flat and stress free photonic crystal membranes were achieved with very good control in sidewall profile and feature shape.
Modified thermal sensors have been produced and characterized for fingerprint recording applications. The sensors are derived from the IR imaging technology developed at INO. The sensor array is made of 160x120 pixel VOx based micro thermistors that provide an image of a surface area of 8.3 x 6.2 mm2 with a resolution of 488 dpi. The sensors were reinforced to withstand the mechanical pressure of the finger and the electrical discharges from the human skin. It is shown that despite their low thermal insulation, the sensors provide an image of the fingerprint pattern with relatively high contrast and resolution. With the acquisition electronics of an IR imager, the temprature of the sensor must be controlled. Measurements of the thermistor temperature were performed in order to access the intrinsic properties of the fingerprint sensors. The NETD is on the order of 2 10-3°C when the pass band of the filter is 330 kHz. The temporal behavior of the thermistor temperature shows that 10 ms after the finger has been brought into contact, with the sensor, the temperature difference between thermistors in ridge and valley areas of the fingerprint DTr,v may reach 80 10-3°C, for an initial temperature difference between the finger and the sensor of 1°C. Once the sensor reaches a steady thermal state after a long time, the same difference decreases to 1.9 10-3°C. The required temperature difference DTr,v, estimated to be 4.8 10-3°C to achieve an adequate signal to noise ratio, is relatively easy to reach at short and at long time periods. A modification to the method of acquisition is proposed to cancel the effect of the thermal drift of the sensor and to eliminate the need for the sensor temperature stabilization with a TEC. With this method, the recording of the fingerprint pattern may be achieved in 50 ms after the finger has been brought into contact. This leads to interesting gains in space, time and power consumption. Finally, for applications where the finger must remain in contact with the sensor, the same method may be efficient to reduce the need for thermal control.
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