Dr. Alexander A. Lagatsky Profile

Dr. Alexander A. Lagatsky

Senior Researcher at Fraunhofer Ctr for Applied Photonics

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Publications (15)

Proceedings Article | 17 October 2023 Presentation + Paper

High-performance and low SWaP-C frequency comb for portable optical clock applications

Alexander Lagatsky

Proceedings Volume 12740, 127400D (2023) https://doi.org/10.1117/12.2675311

KEYWORDS: Frequency combs, Sapphire lasers, Femtosecond phenomena, Semiconductor lasers, Optical clocks, Supercontinuum generation, Mode locking

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Proceedings Article | 17 March 2023 Presentation

Planar- and roll-based transfer printing for scalable heterogeneous integration

Martin Dawson, Michael Strain, Benoit Guilhabert, Dimitars Jevtics, Alexander Lagatsky

Proceedings Volume PC12425, PC124250N (2023) https://doi.org/10.1117/12.2646170

KEYWORDS: Printing, Gallium nitride, Surface roughness, Silicon, Semiconductors, Semiconducting wafers, Polishing, Photonic integrated circuits, Optical alignment, Microlens

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Proceedings Article | 8 March 2023 Presentation + Paper

Highly-compact and power-scalable transition-metal-doped single-frequency lasers

Alexander Lagatsky, Gerald Bonner, Peter Schlosser, David J. Stothard, Loyd McKnight

Proceedings Volume 12399, 123990G (2023) https://doi.org/10.1117/12.2645876

KEYWORDS: Semiconductor lasers, Alexandrite lasers, Laser resonators, Output couplers, Laser crystals, Crystals, Laser frequency, Quantum systems, Laser systems engineering, Sapphire lasers

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Proceedings Article | 13 March 2019 Presentation

Power-scalable ultrafast Ho:YAG slab amplifier at 2094 nm (Conference Presentation)

Daniel Morris, Michael Reilly, Neil Stevenson, Alexander Lagatsky, M. J. Daniel Esser

Proceedings Volume 10896, 108960T (2019) https://doi.org/10.1117/12.2510302

KEYWORDS: Optical amplifiers, Ultrafast phenomena, Ultrafast lasers, Materials processing, Crystals, Laser development, Continuous wave operation, Absorption, Mode locking, Pulsed laser operation

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Proceedings Article | 11 October 2018 Presentation

Tm-doped sesquioxide ceramics for high-power ultrafast laser applications near 2.1 µm spectral region (Conference Presentation)

Alexander Lagatsky

Proceedings Volume 10798, 1079804 (2018) https://doi.org/10.1117/12.2325134

KEYWORDS: Ceramics, High power lasers, Ultrafast lasers, Mid-IR, Laser development, Laser countermeasures, Crystals, Pulsed laser operation, Ultrafast phenomena, Semiconductor lasers

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The development of efficient, low-cost and robust high peak power pulsed lasers in the ~ 2 – 2.1 µm spectral region is required for many application areas in the mid-infrared (mid-IR) photonics sector. In particular, such laser sources can be used to efficiently access the deeper mid-IR region through optical parametric frequency conversion techniques, utilizing nonlinear crystals such as ZGP and OP-GaAs, or supercontinuum gener¬ation in highly nonlinear fibers. Such mid-IR frequency comb systems are of particular interest for laser countermeasures, remote sensing, high precision spec¬troscopy, and environmental monitoring. Compact and efficient ultrafast 2 µm lasers can also be used as seed sources for developing high energy amplifier systems operating in the 2 – 7 µm region which will benefit many applications from the areas of laser material pro-cessing, strong-field phys¬ics, as well as the development of tabletop X-ray coherent sources. So far, the work on the development of pulsed lasers that operate in the 2-2.1 µm spectral region is rather limited and based predominantly on Ho-doped gain media which require relatively expensive and bulky Tm-laser pump sources. Tm3+-doped cubic sesquioxides RE2O3 (RE=Lu, Sc, and Y) occupy a prominent position amongst other Tm3+-doped gain media. They possess advanta¬geous thermo-mechanical properties and spectroscopic features that make them ideal for high power lasers development in the 2 – 2.1 µm region using a low-cost laser diode pump platform around 800 nm. In particular, their thermal conductivities are in range of 13-17 W/m·K (compared to that of YAG which is 11 W/m·K) and in the case of Lu2O3 it decreases negligibly when the rare-earth-ion doping concentration is increased allowing high-power operation under direct diode pumping. In contrast to most Tm3+-doped crystalline and amorphous gain media, their broadband emission spectra extend well beyond 2 µm allowing efficient operation close to 2.1 µm reaching atmospheric transparency window. The attractive characteristics of rare-earth ion doped crystalline sesquioxides gain media have also led them to being studied extensively as ceramics. Currently, high optical quality sesquioxide ceramics can be produced by nanocrystalline and vacuum-sintering technologies. Such ceramic gain media possess stronger fracture toughness than single crystals and afford a high potential for size scalability thereby offering practical advantages in high-power laser implementations. Here we report on our recent progress in the development of a diode-pumped Tm-doped sesquioxide class ceramic ultrafast lasers operating around 2.1 µm region. In particular, a diode-pumped femtosecond Tm:Lu2O3 laser is demonstrated generating directly transform-limited <500 fs pulses with an average output power in excess of 1 W and a peak power of >30 kW at a center wavelength of 2070 nm. Both semiconductor saturable absorber mirror and Ker-lens mode-locking techniques were investigated. The perspectives for further power scaling during ultrashort pulse generation under direct diode pumping around 800 nm and in-band pumping at 1.6 µm region will be discussed.

Proceedings Article | 17 May 2018 Presentation + Paper

Towards high-power on-chip GHz frequency combs

A. Choudhary, A. Lagatsky, P. Kannan, C. T. Brown, D. Shepherd

Proceedings Volume 10683, 106830W (2018) https://doi.org/10.1117/12.2306711

KEYWORDS: Waveguides, Frequency combs, Mode locking, Dispersion, Waveguide lasers, Optical amplifiers, Glasses, Telecommunications, Quadrature amplitude modulation, Mirrors

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Proceedings Article | 28 February 2014 Paper

Near- infrared, mode-locked waveguide lasers with multi-GHz repetition rates

A. Choudhary, A. Lagatsky, Z. Zhang, K. Zhou, Q. Wang, R. Hogg, K. Pradeesh, E. Rafailov, B. Resan, A. E. Oehler, K. Weingarten, W. Sibbett, C. T. Brown, D. Shepherd

Proceedings Volume 8959, 895913 (2014) https://doi.org/10.1117/12.2035639

KEYWORDS: Glasses, Mode locking, Waveguide lasers, Waveguides, Dispersion, Picosecond phenomena, Quantum dots, Mirrors, Solitons, Interferometers

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Proceedings Article | 28 February 2009 Paper

GaInNAs semiconductor disk lasers as pump sources for Tm3+(,Ho3+)-doped glass, crystal and fibre lasers

Sharon Vetter, L. McKnight, Stephane Calvez, Martin Dawson, F. Fusari, Alexander Lagatsky, Wilson Sibbett, Christian Brown, Ville-Markus Korpijärvi, Mircea Guina, B. Richards, G. Jose, Animesh Jha

Proceedings Volume 7193, 719317 (2009) https://doi.org/10.1117/12.811116

KEYWORDS: Glasses, Laser crystals, Crystals, Semiconductor lasers, Fiber lasers, Laser glasses, Wavelength tuning, Mirrors, Semiconductors, Disk lasers

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Proceedings Article | 16 April 2008 Paper

Compact and efficient mode-locked lasers based on QD-SESAMs

E. Rafailov, A. Lagatsky, S. Zolotovskaya, W. Sibbett

Proceedings Volume 6998, 69980B (2008) https://doi.org/10.1117/12.786378

KEYWORDS: Mode locking, Semiconductor lasers, Ultrafast phenomena, Absorption, Pulsed laser operation, Femtosecond phenomena, Semiconductors, Solid state lasers, Reflectivity, Laser applications

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Proceedings Article | 14 February 2008 Paper

High-power Kerr-lens mode-locked ytterbium lasers

F. Bain, A. Lagatsky, C. T. Brown, W. Sibbett

Proceedings Volume 6871, 68712L (2008) https://doi.org/10.1117/12.762933

KEYWORDS: Mode locking, Semiconductor lasers, Crystals, Pulsed laser operation, Refractive index, Laser crystals, Femtosecond phenomena, Absorption, High power lasers, Polarization

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Proceedings Article | 23 August 2007 Paper

Advances in femtosecond lasers having enhanced efficiencies

A. Lagatsky, V. Kisel, F. Bain, C. T. A. Brown, N. V. Kuleshov, W. Sibbett

Proceedings Volume 6731, 67310E (2007) https://doi.org/10.1117/12.751894

KEYWORDS: Mode locking, Femtosecond phenomena, Crystals, Semiconductor lasers, Nonlinear crystals, Pulsed laser operation, Laser crystals, Mirrors, Solid state lasers, Second-harmonic generation

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Proceedings Article | 9 June 2006 Paper

Lead sulfide quantum dots for mode-locking and Q-switching of near IR lasers

A. Malyarevich, V. Savitski, M. Gaponenko, K. Yumashev, A. Lagatsky, W. Sibbett, A. Lipovskii, H. Raaben, A. Zhilin

Proceedings Volume 6054, 60540Q (2006) https://doi.org/10.1117/12.660806

KEYWORDS: Lead, Mode locking, Absorption, Q switches, Glasses, Pulsed laser operation, Quantum dots, Infrared lasers, Picosecond phenomena, Semiconductor lasers

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Proceedings Article | 17 April 2006 Paper

Compact and efficient femtosecond lasers

Tom Brown, Alexander Lagatsky, C. Leburn, Alan McWilliam, Abdul Sarmani, Maria Ana Cataluna, Ben Agate, Kishan Dholakia, David Stevenson, Wilson Sibbett, Yewjun Chai, Pisu Jiang, Kim Tan, Richard Penty, Ian White, Edik Rafailov, N. Kuleshov

Proceedings Volume 6190, 61900S (2006) https://doi.org/10.1117/12.668259

KEYWORDS: Femtosecond phenomena, Semiconductor lasers, Crystals, Pulsed laser operation, Laser crystals, Mode locking, Mirrors, Semiconductors, Laser development, Ultrafast phenomena

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Proceedings Article | 1 September 2004 Paper

Diode-pumped femtosecond Yb:KYW laser with compact three-element cavity

Alexander Lagatsky, Christopher Leburn, Tom Brown, Wilson Sibbett

Proceedings Volume 5460, (2004) https://doi.org/10.1117/12.545653

KEYWORDS: Crystals, Semiconductor lasers, Mode locking, Femtosecond phenomena, Laser crystals, Continuous wave operation, Mirrors, Pulsed laser operation, Prisms, Output couplers

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Proceedings Article | 7 April 2004 Paper

Femtosecond Yb:KYW laser pumped by a single narrow-stripe laser diode

Alexander Lagatsky, Edward Rafailov, Christopher Leburn, Christian Brown, Ning Xiang, Oleg Okhotnikov, Wilson Sibbett

Proceedings Volume 5478, (2004) https://doi.org/10.1117/12.558357

KEYWORDS: Semiconductor lasers, Femtosecond phenomena, Mode locking, Laser damage threshold, Indium gallium arsenide, Semiconductors, Mirrors

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Showing 5 of 15 publications

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