A stable far-field and single-mode performance is of great interest for many applications in sensing or communications.
In this contribution an analysis of the far-field stability versus current and temperature is performed
for a long-wavelength vertical-cavity surface-emitting laser (VCSEL) emitting around 1310 nm. Furthermore,
the single-mode stability is investigated by means of a technology computer aided design (TCAD) tool.
The electro-opto-thermal multi-dimensional simulations are fully-coupled and use microscopic models. The optical
modes are obtained by solving the vectorial Helmholtz equation, using a finite element approach. The
impact of temperature, free carrier absorption and gain on the refractive index is accounted for. The far-field is
calculated using Green's functions.
The investigated VCSEL features an InP-based cavity with multiple quantum wells and a tunnel junction as well
as wafer-fused AlGaAs/GaAs distributed Bragg reflectors.
The comparison of simulated and measured L-I, V-I characteristics and far-field as well as the wavelength-shift
show good agreement for different ambient temperatures as well as driving current values. The simulations reveal
the impact of temperature, gain and carrier effects on the far-field. The design of optical guiding structures
(such as oxides or tunnel junctions) and its impact on the far-field behaviour over ambient temperature and bias
current is discussed.
High performance vertical cavity surface emitting lasers (VCSELs) emitting in the 1310 nm waveband are fabricated by bonding AlGaAs/GaAs distributed Bragg reflectors (DBRs) on both sides of a InP-based cavity containing 5 InAlGaAs quantum wells using the localized wafer fusion technique. A tunnel junction structure is used to inject carriers into the active region. Devices with 7 μm aperture produce single mode emission with 40 dB side-mode suppression ratio.
Maximum single mode output power of 1.7 mW is obtained in the temperature range of 20-70°C. Modulation capability at 3.2 Gb/s is demonstrated both at room temperature and 70°C with rise time and fall time values of eye diagrams bellow 120 ps. Overall device performance complies with the requirements of 10 GBASE-LX4 IEEE.802.3ae standard.
Long wavelength vertical cavity surface emitting lasers (VCSELs) are ideally suited for applications in Metro networks which are currently dominated by 1.3 μm distributed feedback (DFB) and 1.3 μm Fabry-Perot laser diodes. 1.3 μm GaInNAs/AlGaAs VCSELs have been first to satisfy requirements of OC-48 standards and can also play a role in the 10Gb/E technology for medium reach transmission. The high temperature performance of 1.5 μm VCSELs still needs to be improved before challenging the positions of 1.5 μm un-cooled DFB lasers. With the introduction of agile, reconfigurable WDM systems, tunable optically pumped 1.5 μm VCSELs may have a considerable play in Metro networks.
We have demonstrated InGaAsP/AlGaAs double fused 1.5 micrometers multiple wavelength vertical cavity lasers and arrays in which element definition is obtained by localized fusion. Laser elements emit in continuous wave under electrical and optical pumping. Multiple wavelength single element VCSELs have been fabricated in the same batch taking advantage of layer thickness nonuniformity of InGaAsP/InP material close to the edge of the wafer. To obtain multiple wavelength arrays a controllable cavity length variation using anodic oxidation has been performed. The wavelength span in an 8 by 1 laser array is 10 nm. Single mode operation with more than of 40 dB side mode suppression ratio is characteristic for laser elements in the array.
We have evaluated the resonant photodetection characteristics of long wavelength double fused InGaAsP/AlGaAs vertical cavity lasers. Using VCSEL structures fabricated by the localized fusion technique for laser generation, light detection is also possible in open circuit, short circuit and forward biased (FB) regimes. The wavelength selectivity of the detection increases with driving current in FB regime. Detection spectrum with FWHM as low as 0.02 nm is demonstrated in the FB regime at currents above threshold. Investigated structures emit and detect light with high spectral selectivity and may be very useful as multifunctional elements for signal generation a d detection in wavelength division multiplexing systems.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.