Currently, the basic semiconductor materials used in measurement technology are naturally silicon (Si), gallium arsenide (GaAs), gallium nitride (GaN), indium gallium arsenide (InGaAs) used in photodiodes. Semiconductor heterostructures, such as AlGaN/GaN, are less common. However there is no choosing methodology for semiconductor materials that are dedicated to work in upper layers atmosphere conditions, where cosmic radiation is, which will interfere with the operation of communication devices, detectors, solar panels. In this paper, we consider a possible approach to the analysis of semiconductor material (elements, heterostructures) properties for their suitability for operation under the influence of cosmic radiation fluxes on them. The end result of this work is a system for assessing the stability of research equipment and communication devices.
The article provides the PIN-photodiode semiconductor structure In0.52Al0.48As/In0.53Ga0.47As/InP computer simulation results. The structure was grown on an InP-substrate by the method of molecular beam epitaxy. In modeling, PIN-photodiode mathematical model was constructed, with the help of which photocurrent values were obtained for various thicknesses of the undoped section in photodiode absorbing layer. The photodiode response time values are also obtained.
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