We present κ-Ga2O3 layers grown by tin-assisted PLD on highly conductive Al-doped ZnO back contact layers. κ-Ga2O3 deposited on c-sapphire typically exhibits no lateral current flow. Significant currents can only be detected when a vertical current flow through the κ-Ga2O3 layer is enabled by the back contact confirming a strong conductivity anisotropy possibly due to suppressed transport across rotational domain boundaries. Pt/PtOx or Pd/PdOx Schottky contacts and NiO or ZnCo2O4 p-type contacts exhibit rectification ratios up to seven orders of magnitude. Further, we obtain a mean barrier height of ~2.1 eV and ideality factors as low as ~1.3 for Pt/PtOx/κ-Ga2O3 Schottky barrier diodes.
Recently, immense interest in the semiconductor Ga₂O₃ arose due to its large bandgap and high predicted electrical breakdown field. By alloying Ga₂O₃ with In₂O₃ or Al₂O₃, its bandgap can be tuned over a large range, allowing possible applications in heterostructure devices or devices with an adjusted absorption energy. For this purpose, property screening over a large composition range is crucial.
In this contribution, we present electrical, optical and structural properties of (Ga,In)₂O₃ and (Ga,Al)₂O₃ thin films grown by continuous composition spread pulsed laser deposition. The influence of growth parameters on phase boundaries were investigated and unipolar devices were fabricated.
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