Prof. Anupam Madhukar Profile

Prof. Anupam Madhukar

Kenneth T. Norris Professor of Engineering at Univ of Southern California

SPIE Involvement:

Author

Proceedings Article | 14 August 2003 Open Access

Photodetectors: UV to IR

Joe Campbell, Shuling Wang, Xiaoguang Zheng, Xiaowei Li, Ning Li, Feng Ma, Xiaoguang Sun, Charles Collins, A. Beck, B. Yang, Jeffrey Hurst, Rubin Sidhu, Archie Holmes, U. Chowdhury, Michael Wong, Russell Dupuis, Andrew Huntington, Larry Coldren, Zhonghui Chen, Eui-Tae Kim, Anupam Madhukar

Proceedings Volume 5246, (2003) https://doi.org/10.1117/12.511201

KEYWORDS: Avalanche photodetectors, Aluminum, Gallium, Photodetectors, Photodiodes, Gallium arsenide, Ionization, Electrons, Ultraviolet radiation, Quantum dots

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Proceedings Article | 1 July 2003 Paper

Photodetectors: UV to IR

Joe Campbell, Shuling Wang, Xiaoguang Zheng, Xiaowei Li, Ning Li, Feng Ma, Xiaoguang Sun, Charles Collins, A. Beck, B. Yang, Jeffrey Hurst, Rubin Sidhu, Archie Holmes, U. Chowdhury, Michael Wong, Russell Dupuis, Andrew Huntington, Larry Coldren, Zhonghui Chen, Eui-Tae Kim, Anupam Madhukar

Proceedings Volume 4999, (2003) https://doi.org/10.1117/12.482483

KEYWORDS: Avalanche photodetectors, Photodetectors, Ionization, Electrons, Quantum dots, Ultraviolet radiation, Resistance, External quantum efficiency, Avalanche photodiodes, Indium arsenide

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Proceedings Article | 28 March 2002 Paper

Quantum dot infrared photodetectors

Zhengmao Ye, Joseph Campbell, Zhonghui Chen, E. Kim, Anupam Madhukar

Proceedings Volume 4656, (2002) https://doi.org/10.1117/12.460809

KEYWORDS: Quantum dots, Electrons, Gallium arsenide, Indium arsenide, Quantum well infrared photodetectors, Infrared radiation, Indium gallium arsenide, Photodetectors, Infrared photography, Temperature metrology

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Proceedings Article | 24 May 2000 Paper

Vertically integrated photonic multichip module architecture for vision applications

Armand Tanguay, B. Keith Jenkins, Christoph von der Malsburg, Bartlett Mel, Gary Holt, John O'Brien, Irving Biederman, Anupam Madhukar, Patrick Nasiatka, Yunsong Huang

Proceedings Volume 4089, (2000) https://doi.org/10.1117/12.386880

KEYWORDS: Diffractive optical elements, Modulators, Silicon, Sensors, Augmented reality, Vertical cavity surface emitting lasers, Very large scale integration, Visual process modeling, Multiplexing, Gallium arsenide

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Proceedings Article | 1 October 1990 Paper

Interfacet migration and defect formation in heteroepitaxy on patterned substrates: AlGaAs and InGaAs on GaAs (100) in MBE

Supratik Guha, Anupam Madhukar, Li-ping Chen, K. Rajkumar, Ravindra Kapre

Proceedings Volume 1285, (1990) https://doi.org/10.1117/12.20817

KEYWORDS: Gallium arsenide, Optical lithography, Semiconductors, Photomicroscopy, Thin films, Spatial light modulators, Indium gallium arsenide, Diodes, Arsenic, Mendelevium

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We present results for lattice matched (AlxGai..xAs, x=0.5 and x=0.0) and lattice mismatched (InxGai..xAs, x□0.25) growth on patterned GaAs (100) substrates. For the AlGai..xAs structures, the GaAs substrates were patterned in the form of elongated mesas parallel to [011 II with widths of approximately 3 tim. Interfacet migration effects observed on the nesas via cross-section transmission electron microscope studies are explained in terms of a ledge-ledge interaction on the vicinal surfaces formed due to growth on the mesas. InxGai..xAs (x□0.25) structures were grown on GaAs (100) substrates patterned in the form of elongated mesas parallel to [01 11 with widths of approximately 1 tim. This patterning direction was chosen since under cutting in the [0 1 1] direction eliminates inter-facet migration effects so that compositional change induced strain effects can be minimised. For x □0.15, we find a reduction in misfit dislocation densities in films upto five times the nominal critical thickness for growths on the patterned mesas as compared to the growths on the corresponding non patterned regions. For x=0.25 no such difference is observed and a large number ofthreading dislocations ( around iO cm2) are found in both the patterned and the non patterned regions. This is believed to be a consequence of the onset ofa 3-D island growth mode. Finally we present some results for the growth of InØ5Gaj•75As I AlAs resonant tunneling diode (RTD) structures and a 100 period InjØGaØ8As (80 A) IGaAs (160 A) Multiple Quantum Well (MQW) such as suited for spatial light modulator (SLM) structures on GaAs (100) substrates patterned in both <01 1> directions on a length scale of 12 to 20 tm. For the RTD structures we conclude that benefits from patterning are expected for x□0.25 provided the growth kinetics are appropriately adjusted to prevent 3D island growth mode. For the MQW -SLMstructure we demonstrate superior optical properties for the growth in the patterned region and a corresponding absence of threading dislocations in the central region of the mesas.

SPIE Conference Volume | 10 February 2006

Gallium Nitride Materials and Devices

SPIE Conference Volume | 1 October 1990

Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors

SPIE Conference Volume | 15 August 1988

Growth of Compound Semiconductor Structures II

Conference Committee Involvement (3)

GaN Materials and Devices

23 January 2006 | San Jose, California, United States

Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors

20 March 1990 | San Diego, CA, United States

Growth of Compound Semiconductor Structures II

14 March 1988 | Newport Beach, CA, United States

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