Prof. Armando Luches Profile

Prof. Armando Luches

at Univ degli Studi di Lecce

SPIE Involvement:

Author

Publications (34)

Proceedings Article | 15 January 2008 Paper

Deposition of films and layers for sensors with PLD and LIFT method

S. Mulenko, Y. Kudryavtsev, N. Gorbachuk, A. Luches, A. Caricato, V. Veiko, V. Chuiko, A. Petrov

Proceedings Volume 6985, 69850J (2008) https://doi.org/10.1117/12.786988

KEYWORDS: Silica, Semiconductors, Silicon, Sensors, Metals, Thin films, Pulsed laser deposition, Neodymium, Chromium, Iron

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Two methods were used for the deposition of thin films and layers: pulsed laser deposition (PLD) and laser-induced film transfer (LIFT). The first one was based on using KrF laser radiation. Thin films and layers were deposited by KrF laser ablation of CrSi₂ and β-FeSi₂ targets with the aim to obtain silicide layers with narrow band gap for sensor applications. The CrSi₂-based films display both semiconductor and metal properties, depending on the deposition parameters. Thus, the film d ≅ 40 nm thick, deposited on Si at 740 K, presents a band gap E_g ≅ 0.18 eV, a thermo e.m.f. coefficient α ≅ 1.0-1.4 mV/K for 300≤T≤340 K and a coefficient of tensosensitivity (R-R₀)/R_0ε) ≅ 5. The film with the same thickness, but deposited on SiO₂ at 740 K, presents a metal behavior in the range 125≤T≤296 K and a semiconductor one for 77≤T≤125 K. Its α coefficient changes in the range 5.0 - 7.5 μV/K for 300≤T≤340 K. The 750 nm thick film deposited on SiO₂ at 740 K displays only semiconductor behavior in the range 296-77 K with E_g ≅ 0.013 eV and α ≅ 10-15 μV/K for 293≤T≤340 K. The coefficient of tensosensitivity for these films is changing in the range 2-5. The β-FeSi₂-based films deposited on SiO₂ at 295≤T≤740 K show only semiconductor behavior. The thicker the film, the higher E_g: d ≅ 150 nm, E_g ≅ 0.032 eV; d ≅ 70 nm, E_g ≅ 0.027 eV; d ≅ 60 nm, E_g ≅ 0.023 eV. The thermo e.m.f coefficient α ≅ 10 μV/K for the 150 nm thick film and α 8 μV/K for the 60 nm thick film at 293≤T≤340 K. The coefficient of tensosensitivity for these films varies in the range 2.3-4.7. The second one was based on LIFT of CrSi₂ and β-FeSi₂ targets, using a Q-switched Nd: YAG laser. The α coefficient for the deposited layer from β-FeSi₂ is about 2.2 μV/K with E_g ≅ 0.05 eV. While decreasing the average power density of the Q-switched Nd: YAG laser, the band gap decreases down to 0.005 eV. For this film we found α ≅ 2.0 μV/K. The α coefficient for the deposited layer from CrSi₂ is about 36 μV/K with E_g ≅ 0.09 eV. Coefficient of thermo e.m.f. for layers obtained by LIFT method was measured at 300≤T≤350 K. The coefficient of tensosensitivity for layers obtained by LIFT varied in the range 1.5-4.2. The higher the semiconductor phase content in the deposited films and layers obtained by PLD and LIFT methods, the higher are the values of α and (R-R₀)/R_0ε.

Proceedings Article | 15 January 2008 Paper

Nanoparticle thin films deposited by MAPLE for sensor applications

A. Caricato, S. Capone, M. Epifani, M. Lomascolo, A. Luches, M. Martino, F. Romano, R. Rella, P. Siciliano, J. Spadavecchia, A. Taurino, T. Tunno, D. Valerini

Proceedings Volume 6985, 69850H (2008) https://doi.org/10.1117/12.786981

KEYWORDS: Nanoparticles, Bioalcohols, Sensors, Thin films, Absorption, Scanning electron microscopy, Thin film deposition, Gas sensors, Silica, Titanium dioxide

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Proceedings Article | 25 April 2007 Paper

Deposition of semiconductor thin films with narrow band gap based on iron oxides by using laser radiation (LCVD and RPLD)

A. Caricato, Y. Kudryavsev, A. Luches, S. Mulenko

Proceedings Volume 6606, 66060T (2007) https://doi.org/10.1117/12.729641

KEYWORDS: Iron, Oxides, Protactinium, Oxygen, Semiconductors, Silicon, Semiconductor lasers, Nd:YAG lasers, Semiconductor materials, Thin films

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Proceedings Article | 10 June 2006 Paper

Crack growth behavior of silicate thin films prepared by pulsed laser deposition

A. P. Caricato, A. Fazzi, A. Jha, A. Kar, G. Leggieri, A. Luches, M. Martino, F. Romano, S. Shen, R. Thomson, T. Tunno

Proceedings Volume 6344, 63442F (2006) https://doi.org/10.1117/12.693640

KEYWORDS: Waveguides, Scanning electron microscopy, Refractive index, Erbium, Thin films, Pulsed laser deposition, Etching, Silicates, Silicate glass, Excimer lasers

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Proceedings Article | 7 June 2005 Paper

Effect of laser ablation parameters on the structure and properties of multicomponent magnetic films

A. Luches, S. Luby, S. Acquaviva, A. Caricato, M. Fernandez, E. Majkova, Z. Frait, D. Fraitova, R. Malych, P. Mengucci

Proceedings Volume 5850, (2005) https://doi.org/10.1117/12.633523

KEYWORDS: Magnetism, Iron, Laser ablation, Silicon, Thin films, Scanning electron microscopy, Crystals, Nickel, Cobalt, Magnetic sensors

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Proceedings Article | 19 November 2003 Paper

Pulsed laser deposition of Cd_1-xMn_xTe thin films

A. Caricato, Emilia D'Anna, M. Fernandez, Gilberto Leggieri, Armando Luches, E. Mero, Maurizio Martino

Proceedings Volume 4829, (2003) https://doi.org/10.1117/12.530040

KEYWORDS: Manganese, Thin films, Spectroscopy, Cadmium, Laser ablation, Pulsed laser deposition, Luminescence, Scanning electron microscopy, Tellurium, Sapphire

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Proceedings Article | 19 November 2003 Paper

Doped chalcogenide glass thin films deposited by pulsed laser ablation

A. Caricato, M. Fernandez, Gilberto Leggieri, Armando Luches, Maurizio Martino, Francesco Prudenzano

Proceedings Volume 4829, (2003) https://doi.org/10.1117/12.525836

KEYWORDS: Chalcogenide glass, Transmittance, Optical amplifiers, Thin films, Laser ablation, Computer programming, Waveguides, Reflectivity, Thin film deposition, Waveguide lasers

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Proceedings Article | 14 November 2003 Paper

Pulsed laser deposition of thin refractory metal nitride films

Manuel Fernandez, M. Bereznai, A. Caricato, Emilia D'Anna, A. Juhasz, Gilberto Leggieri, Armando Luches, Guiseppe Majni, Maurizio Martino, Paolo Mengucci, P. Nagy, Laszlo Nanai, Zsolt Toth

Proceedings Volume 5147, (2003) https://doi.org/10.1117/12.543681

KEYWORDS: Protactinium, Nitrogen, Crystals, Molybdenum, Vanadium, Tantalum, Thin films, Metals, Silicon, Scanning electron microscopy

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Proceedings Article | 9 August 2002 Paper

Laser-irradiation-induced diffusion in metallic multilayers

Stefan Luby, Eva Majkova, Matej Jergel, Emilia D'Anna, Armando Luches, Maurizio Martino, Paolo Mengucci, Guiseppe Majni

Proceedings Volume 4762, (2002) https://doi.org/10.1117/12.478667

KEYWORDS: Diffusion, Interfaces, Excimer lasers, Pulsed laser operation, Silver, Silicon, Grazing incidence, X-rays, Physics, Statistical analysis

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Proceedings Article | 9 August 2002 Paper

Pulsed laser deposition of films and multilayers for optoelectronic applications

A. Caricato, M. Fernandez, Gilberto Leggieri, Armando Luches, Maurizio Martino, Francesco Prudenzano

Proceedings Volume 4762, (2002) https://doi.org/10.1117/12.478662

KEYWORDS: Silicon, Waveguides, Refractive index, Chalcogenide glass, Multilayers, Protactinium, Silica, Excimer lasers, Pulsed laser deposition, Laser ablation

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Proceedings Article | 29 June 2001 Paper

Pulsed laser deposition of thin films for optics applications

M. De Giorgi, M. Fernandez, Gilberto Leggieri, Armando Luches, Maurizio Martino, A. Zocco

Proceedings Volume 4430, (2001) https://doi.org/10.1117/12.432840

KEYWORDS: Silicon, Oxygen, Scanning electron microscopy, Thin films, Excimer lasers, Protactinium, Pulsed laser deposition, Silica, Silicon films, Photomicroscopy

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Proceedings Article | 26 June 2001 Paper

Pulsed-laser deposition of nanometric and micrometric films for optoelectronic applications

M. De Giorgi, L. Elia, M. Fernandez, Gilberto Leggieri, Armando Luches, Maurizio Martino, A. Zocco

Proceedings Volume 4423, (2001) https://doi.org/10.1117/12.431212

KEYWORDS: Silicon, Protactinium, Scanning electron microscopy, Silicon films, Excimer lasers, Oxygen, Optoelectronics, Silica, Photomicroscopy, Pulsed laser deposition

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