The photo-excited carrier distribution and radiative recombination efficiency in dryetched quantum well dots (QWDs) with diameters down to 80 nm have been investigated by photoluminescence (PL) spectroscopy and cathodoluminescence (CL) imaging. The quantum well dots were fabricated from lattice-matched single or multiple quantum well heterostructures with InGaAs well thicknesses ranging from 2 to 15 nm. Low temperature CL imaging indicated dot-to-dot variation of emission intensity. The PL efficiency exhibits no significant reduction for dot sizes larger than 170 nm. But for dot diameters smaller than approximately equals 100 nm, the PL intensity is not detectable. Such diminution of PL intensity is attributed to side wall damage due to reactive ion etching. For dot diameters smaller than 300 nm, PL peak energies shift to higher values, reaching a blue shift of approximately equals 3 meV for 128 nm diameter GSMBE grown dots and approximately equals 10 meV for 130 nm diameter MOCVD grown dots.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.