Dr. Artak Isoyan Profile

Dr. Artak Isoyan

Sr. Staff R&D Engineer at Synopsys Inc

SPIE Involvement:

Author

Area of Expertise:

Modeling , Electron Beam Lithography , Computational Lithography , Photolithography , Optical Proximity Correction , Software Product Development

Profile Summary

- Modeling of semiconductor photolithography manufacturing process for the purpose of Optical Proximity Correction.
- Knowledge semiconductor processing
- Electron-beam Lithography, SEM & AFM Metrology
- Software Product Development
- Process Research and Development

Publications (16)

Proceedings Article | 19 March 2018 Paper

Paper

Extreme ultraviolet mask multilayer material variation impact on horizontal to vertical pattern bias

Lawrence Melvin, Yudhishthir Kandel, Qiliang Yan, Artak Isoyan, Weimin Gao

Proceedings Volume 10583, 105831S (2018) https://doi.org/10.1117/12.2296864

KEYWORDS: Photomasks, Reflectivity, Extreme ultraviolet, Silicon, Molybdenum, Semiconducting wafers, Reflectors, Critical dimension metrology, Optical proximity correction, Reticles

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Proceedings Article | 16 October 2017 Presentation + Paper

Presentation + Paper

Individual multilayer reflectance and near field image formation in an EUV reticle

Lawrence Melvin, Yudhi Kandel, Artak Isoyan, Weimin Gao

Proceedings Volume 10450, 104500F (2017) https://doi.org/10.1117/12.2282008

KEYWORDS: Reflectivity, Near field, Photomasks, Extreme ultraviolet, Silicon, Reticles, Molybdenum, Semiconducting wafers

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Proceedings Article | 30 March 2017 Presentation + Paper

Presentation + Paper

Exposure source error and model source error impact on optical proximity correction

Lawrence Melvin, Artak Isoyan, Chander Sawh

Proceedings Volume 10147, 101470X (2017) https://doi.org/10.1117/12.2258055

KEYWORDS: Optical proximity correction, Photomasks, Critical dimension metrology, Semiconducting wafers, Cadmium sulfide, Lithographic illumination, Computational lithography, Image processing, Process control, Data modeling, Reticles, Resolution enhancement technologies, Error analysis, Optical lithography

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Proceedings Article | 24 March 2017 Presentation + Paper

Presentation + Paper

Source defect impact on pattern shift

Artak Isoyan, Chander Sawh, Lawrence Melvin

Proceedings Volume 10147, 101470M (2017) https://doi.org/10.1117/12.2257674

KEYWORDS: Optical proximity correction, Contamination, Image acquisition, Semiconducting wafers, Cadmium sulfide, Critical dimension metrology, Photomasks, Manufacturing, Failure analysis, Source mask optimization, Picosecond phenomena, Nano opto mechanical systems, Scanners, Data modeling

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Most pattern shift analysis discussions focus on the accuracy of the Optical Proximity Correction (OPC) model that forms the pattern contours, while the OPC model’s source itself is considered as a constant input to the model. In reality, the source might have defects or contaminations that can impact the image formation and possibly introduce asymmetrical pattern formation behavior. Initial studies have quantified the impact of source defects on wafer CDs in the presence of OPC [1]. These studies have found that when source defects are present in the OPC model CD variation, NILS impact, MEEF impact, and pattern shifts might occur. Empirical studies and data have shown that the severity of defects are proportional to the impact on final pattern formation. However, it should also be noted that optical proximity correction schemes have been found to be a robust ally in countering the aforementioned defects in imaging.

This study is a continuation of the previous work of source imperfection impacts on optical proximity correction to better understand the interaction between source defects and pattern shift during mask synthesis. Two variations of the study are executed: the first variation is the mask error case where random intensity variations are introduced in the pixelated source and an OPC model is created, then the corrected pattern is imaged with an ideal source. The second variation is the exposure error case where the OPC correction is performed with an ideal source, then exposed with a random defect in the manufacturing source. For both cases a pixel transmission variation is introduced in pixelated source using 11 various pixel selection methodology. Each experiment for the mask and exposure defects are conducted five times. This aims to quantify the effects on pattern uniformity while assuming defects in source manufacturing. This also allows you to better understand the limitation of scanner systems that might not be able to 100% represent the source pixels that were created during an aggressive Source Mask Optimization (SMO) session. Detailed analysis and studies are conducted to quantify the source defects impact on pattern formation.

Proceedings Article | 28 August 2014 Paper

Paper

Nano fabrication of compound bifocal zone plate for x-ray optics

A. Kuyumchyan, A. Suvorov, T. Ishikawa, V. Aristov, E. Shulakov, A. Isoyan, N. Kuyumchyan, V. Mkrtchyan

Proceedings Volume 9170, 91700V (2014) https://doi.org/10.1117/12.2061560

KEYWORDS: X-rays, Diffraction, Silicon, Phase shifts, Zone plates, X-ray optics, Nanolithography, Electron beam lithography, Optical components, Crystals

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Proceedings Article | 12 April 2013 Paper

Paper

Compact OPC model optimization using emulated data

Artak Isoyan, Thomas Mülders, Craig Westwood, Lawrence Melvin

Proceedings Volume 8683, 86830V (2013) https://doi.org/10.1117/12.2010910

KEYWORDS: Data modeling, Process modeling, Calibration, Optical proximity correction, Mathematical modeling, Semiconducting wafers, Optimization (mathematics), Photoresist materials, Cadmium, Wafer testing

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Proceedings Article | 5 October 2011 Paper

Paper

Table top nanopatterning by de-magnified Talbot effect using a capillary discharge soft x-ray laser

L. Urbanski, P. Wachulak, A. Isoyan, C. Menoni, J. Rocca, M. Marconi

Proceedings Volume 8140, 81400T (2011) https://doi.org/10.1117/12.892855

KEYWORDS: Photomasks, Mirrors, Spherical lenses, Capillaries, X-ray lasers, Photoresist materials, Extreme ultraviolet, Nanostructures, Photography, Diffraction

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Proceedings Article | 15 December 2010 Paper

Paper

Nanometer scale imaging with table top extreme ultraviolet sources

Przemyslaw Wachulak, Richard Sandberg, Artak Isoyan, Lukasz Urbanski, Andrzej Bartnik, Randy Bartels, Carmen Menoni, Henryk Fiedorowicz, Jorge Rocca, Mario Marconi

Proceedings Volume 7746, 774609 (2010) https://doi.org/10.1117/12.880340

KEYWORDS: Extreme ultraviolet, Holograms, Spatial resolution, Diffraction, Image resolution, Holography, 3D image reconstruction, Photoresist materials, Photomasks, Microscopes

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Proceedings Article | 3 April 2010 Paper

Paper

Full-chip high resolution electron-beam lithography proximity effect correction modeling

Artak Isoyan, Lawrence Melvin

Proceedings Volume 7637, 76370X (2010) https://doi.org/10.1117/12.846681

KEYWORDS: Electron beam lithography, Point spread functions, Data modeling, Monte Carlo methods, Lithography, Image acquisition, Electron beams, Semiconducting wafers, Model-based design, Convolution

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Proceedings Article | 22 March 2010 Paper

Paper

Stepwise fitting methodology for optical proximity correction modeling

Artak Isoyan, Jianliang Li, Lawrence Melvin

Proceedings Volume 7640, 764030 (2010) https://doi.org/10.1117/12.846635

KEYWORDS: Optical proximity correction, Optimization (mathematics), Mathematical modeling, Data modeling, Process modeling, Statistical modeling, Photomasks, Lithography, Photoresist processing, Performance modeling

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Proceedings Article | 29 September 2009 Paper

Paper

Tabletop soft x-ray lithography

M. Marconi, P. Wachulak, L. Urbanski, Artak Isoyan, Fan Jiang, Yang Chun Cheng, J. Rocca, C. Menoni, F. Cerrina

Proceedings Volume 7451, 74510J (2009) https://doi.org/10.1117/12.825509

KEYWORDS: Capillaries, Holography, Lithography, Photoresist materials, Printing, Nanostructures, Photomasks, Interferometry, X-ray lithography, Coherence imaging

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Proceedings Article | 23 September 2009 Paper

Paper

Predictive modeling for EBPC in EBDW

Rainer Zimmermann, Martin Schulz, Wolfgang Hoppe, Hans-Jürgen Stock, Wolfgang Demmerle, Alex Zepka, Artak Isoyan, Lars Bomholt, Serdar Manakli, Laurent Pain

Proceedings Volume 7488, 74883J (2009) https://doi.org/10.1117/12.833482

KEYWORDS: Data modeling, 3D modeling, Electron beam direct write lithography, Point spread functions, Critical dimension metrology, Model-based design, Geometrical optics, Cadmium, Error analysis, Virtual reality

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SPIE Journal Paper | 1 April 2009

Engineering study of extreme ultraviolet interferometric lithography

Jiang Fan, Yang-Chun Cheng, Artak Isoyan, Franco Cerrina

JM3, Vol. 8, Issue 02, 021203, (April 2009) https://doi.org/10.1117/12.10.1117/1.3112006

KEYWORDS: Modulation, Diffraction gratings, Photomasks, Diffraction, Lithography, Extreme ultraviolet lithography, Extreme ultraviolet, Interferometry, Fringe analysis, Interferometers

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Proceedings Article | 18 March 2009 Paper

Paper

Extreme ultraviolet holographic lithography with a table-top laser

A. Isoyan, F. Jiang, Y.-C. Cheng, P. Wachulak, L. Urbanski, J. Rocca, C. Menoni, M. Marconi, F. Cerrina

Proceedings Volume 7271, 72713O (2009) https://doi.org/10.1117/12.814678

KEYWORDS: Computer generated holography, Extreme ultraviolet, Lithography, Photomasks, Holography, Photoresist materials, Extreme ultraviolet lithography, 3D image reconstruction, Image resolution, Nanolithography

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Proceedings Article | 21 March 2008 Paper

Paper

Progress in extreme ultraviolet interferometric lithography at the University of Wisconsin

Artak Isoyan, Yang-Chun Cheng, Fan Jiang, John Wallace, Mikhail Efremov, Paul Nealey, Franco Cerrina

Proceedings Volume 6921, 69212R (2008) https://doi.org/10.1117/12.772681

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Semiconducting wafers, Modulation, Lithography, Diffraction gratings, Extreme ultraviolet, Chromium, Interferometry, Polymethylmethacrylate

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Proceedings Article | 21 November 2002 Paper

Paper

High-efficiency low-absorption Fresnel compound zone plates for hard x-ray focusing

Armen Kuyumchyan, A. Isoyan, E. Shulakov, Vitaly Aristov, M Kondratenkov, Anatoly Snigirev, Irina Snigireva, Alexei Souvorov, Kenji Tamasaku, Makina Yabashi, Tetsuya Ishikawa, K Trouni

Proceedings Volume 4783, (2002) https://doi.org/10.1117/12.450480

KEYWORDS: Zone plates, Diffraction, Silicon, Synchrotron radiation, Ions, X-rays, Hard x-rays, Crystals, Electron beam lithography, Plasma etching

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Showing 5 of 16 publications

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