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Artyom Serin
at Ioffe Institute
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Publications (1)
Proceedings Article | 20 April 2020 Presentation + Paper
Optoelectronic devices with active region based on InGaAs/GaAs quantum well-dots
M. Maximov, N. Yu. Gordeev, Yu. Shernyakov, A. Payusov, S. Mintairov, N. Kalyuzhnyy, G. Kornyshov, A. Serin, A. Usikova, I. Gadzhiev, M. Kulagina, A. Nadtochiy, A. Zhukov
Proceedings Volume 11356, 113560A (2020) https://doi.org/10.1117/12.2554728
KEYWORDS: Edge emitting semiconductor lasers, Waveguides, Mode locking, Gallium arsenide, Semiconductor lasers, Optoelectronic devices, Light emitting diodes
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