Dr. Bernd Tollkühn Profile

Dr. Bernd Tollkühn

at Fraunhofer Institut IISB

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Author

Publications (10)

Proceedings Article | 17 May 2005 Paper

Correlation analysis: a fast and reliable method for a better understanding of simulation models in optical lithography

Bernd Tollkuhn, Anne Heubner, Klaus Elian, Boris Ruppenstein, Andreas Erdmann

Proceedings Volume 5755, (2005) https://doi.org/10.1117/12.599390

KEYWORDS: Process modeling, Calibration, Lithography, Diffusion, Optical proximity correction, Optical lithography, Critical dimension metrology, Optical simulations, Photomasks, Statistical analysis

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Proceedings Article | 28 May 2004 Paper

Toward automatic mask and source optimization for optical lithography

Andreas Erdmann, Tim Fuehner, Thomas Schnattinger, Bernd Tollkuehn

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.533215

KEYWORDS: Photomasks, Lithography, Optimization (mathematics), Critical dimension metrology, Genetic algorithms, Manufacturing, Binary data, Resolution enhancement technologies, Optical lithography, Lithographic illumination

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Proceedings Article | 14 May 2004 Paper

Do we need complex resist models for predictive simulation of lithographic process performance?

Bernd Tollkuhn, Andreas Erdmann, Jeroen Lammers, Christoph Nolscher, Armin Semmler

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.534045

KEYWORDS: Finite element methods, Calibration, Data modeling, Photomasks, Diffusion, Optical proximity correction, Semiconducting wafers, Critical dimension metrology, Photoresist processing, Optimization (mathematics)

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Proceedings Article | 14 May 2004 Paper

Methodology and practical application of an ArF resist model calibration

Ralf Ziebold, Bernd Kuchler, Christoph Nolscher, Martin Robiger, Klaus Elian, Bernd Tollkuhn

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.536343

KEYWORDS: Calibration, Data modeling, Photomasks, Lithography, 3D modeling, Semiconducting wafers, Optimization (mathematics), Diffractive optical elements, Computer simulations, Diffusion

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Proceedings Article | 31 December 2003 Paper

Mask and source optimization for lithographic imaging systems

Andreas Erdmann, Richard Farkas, Tim Fuehner, Bernd Tollkuehn, Gabriela Kokai

Proceedings Volume 5182, (2003) https://doi.org/10.1117/12.504732

KEYWORDS: Photomasks, Lithography, Critical dimension metrology, Genetic algorithms, Binary data, Lithographic illumination, Optimization (mathematics), Resolution enhancement technologies, Manufacturing, Projection systems

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Proceedings Article | 12 June 2003 Paper

Will Darwin's law help us to improve our resist models?

Bernd Tollkuhn, Tim Fuehner, Daniela Matiut, Andreas Erdmann, Armin Semmler, Bernd Kuechler, Gabriella Kokai

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485078

KEYWORDS: Genetic algorithms, Diffusion, Computer simulations, Optimization (mathematics), Finite element methods, Calibration, Data modeling, Performance modeling, Lithography, Chemically amplified resists

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Proceedings Article | 12 June 2003 Paper

New models for the simulation of post-exposure bake of chemically amplified resists

Daniela Matiut, Andreas Erdmann, Bernd Tollkuehn, Armin Semmler

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485080

KEYWORDS: Diffusion, Chemically amplified resists, Systems modeling, Calibration, Performance modeling, Lithography, Instrument modeling, Optical lithography, Critical dimension metrology, Device simulation

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Proceedings Article | 30 July 2002 Paper

New methods to calibrate simulation parameters for chemically amplified resists

Bernd Tollkuehn, Andreas Erdmann, Niko Kivel, Stewart Robertson, Doris Kang, Steven Hansen, Anita Fumar-Pici, Tsann-Bim Chiou, Wolfgang Hoppe

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474497

KEYWORDS: Diffusion, Performance modeling, Data modeling, Calibration, Chemically amplified resists, Optimization (mathematics), Device simulation, Optical lithography, Monochromatic aberrations, Lithography

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Proceedings Article | 26 April 2001 Paper

Comparison of simulation approaches for chemically amplified resists

Andreas Erdmann, Wolfgang Henke, Stewart Robertson, Ernst Richter, Bernd Tollkuehn, Wolfgang Hoppe

Proceedings Volume 4404, (2001) https://doi.org/10.1117/12.425196

KEYWORDS: Diffusion, Data modeling, Performance modeling, Lithography, Calibration, Chemically amplified resists, Critical dimension metrology, Device simulation, Photoresist materials, Picture Archiving and Communication System

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Proceedings Article | 26 April 2001 Paper

Automatic resist parameter calibration procedure for lithography simulation

Bernd Tollkuehn, Max Hoepfl, Andreas Erdmann, Stefan Majoni, Marion Jess

Proceedings Volume 4404, (2001) https://doi.org/10.1117/12.425221

KEYWORDS: Data modeling, Diffusion, Lithography, Scanning electron microscopy, Calibration, Optimization (mathematics), Performance modeling, Critical dimension metrology, Computer simulations, Picture Archiving and Communication System

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Showing 5 of 10 publications

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