Mr. Bilal Chehab Profile

Bilal Chehab

at imec

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Publications (6)

Proceedings Article | 26 May 2022 Presentation + Paper

Design, patterning, and process integration overview for 2nm node

Syed Muhammad Yasser Sherazi, Yi-Han Chang, Youssef Drissi, Bilal Chehab, Jae Uk Lee, Victor Vega Gonzales, Ryan Ryoung Han Kim

Proceedings Volume 12052, 120520F (2022) https://doi.org/10.1117/12.2615311

KEYWORDS: Metals, Fin field effect transistors, Semiconducting wafers, Optical lithography, 3D imaging standards, Integrated circuits, CMOS devices, Standards development, Field effect transistors, Etching

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Proceedings Article | 25 May 2022 Presentation + Paper

Buried power rail integration for CMOS scaling beyond the 3 nm node

A. Gupta, Z. Tao, D. Radisic, H. Mertens, O. Varela Pedreira, S. Demuynck, J. Bömmels, K. Devriendt, N. Heylen, S. Wang, K. Kenis, L. Teugels, F. Sebaai, C. Lorant, N. Jourdan, B. Chan, S. Subramanian, F. Schleicher, A. Peter, N. Rassoul, Y. Siew, B. Briggs, D. Zhou, E. Rosseel, E. Capogreco, G. Mannaert, A. Sepúlveda, E. Dupuy, K. Vandersmissen, B. Chehab, G. Murdoch, E. Altamirano Sanchez, S. Biesemans, Zs. Tőkei, E. Dentoni Litta, N. Horiguchi

Proceedings Volume 12056, 120560B (2022) https://doi.org/10.1117/12.2615641

KEYWORDS: Ruthenium, Metals, Molybdenum, Etching, Tungsten, Front end of line, Chemical mechanical planarization, Silicon

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Proceedings Article | 22 April 2021 Presentation + Paper

Design-technology co-optimization of sequential and monolithic CFET as enabler of technology node beyond 2nm

Bilal Chehab, Julien Ryckaert, Pieter Schuddinck, Pieter Weckx, Naoto Horiguchi, Gioele Mirabelli, Alessio Spessot, Myunghee Na

Proceedings Volume 11614, 116140D (2021) https://doi.org/10.1117/12.2583395

KEYWORDS: Back end of line, Standards development, Metals, Field effect transistors, Multiplexers, Logic, Fin field effect transistors, Dielectrics, Control systems, Clocks

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Proceedings Article | 25 March 2020 Presentation

Progression of Logic Device and DTCO to enable advance scaling (Conference Presentation)

Satadru Sarkar, Bilal Chehab, Julien Ryckaert, Myung Hee Na, Alessio Spessot

Proceedings Volume 11328, 113280P (2020) https://doi.org/10.1117/12.2551690

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Proceedings Article | 23 March 2020 Presentation + Paper

Sequential 3D standard cell 4T architecture using design crenellation and self-aligned MOL for N2 technology and beyond

Pieter Weckx, Bilal Chehab, Julien Ryckaert, Diederik Verkest, Alessio Spessot

Proceedings Volume 11328, 113280A (2020) https://doi.org/10.1117/12.2552032

KEYWORDS: Standards development, Metals, 3D imaging standards, Logic, System on a chip, Back end of line, Semiconducting wafers, Optical lithography, Wafer bonding, Fin field effect transistors

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Proceedings Article | 23 March 2020 Presentation + Paper

Standard cell architectures for N2 node: transition from FinFET to nanosheet and to forksheet device

Bilal Chehab, P. Weckx, J. Ryckaert, D. Jang, D. Verkest, A. Spessot

Proceedings Volume 11328, 1132807 (2020) https://doi.org/10.1117/12.2548573

KEYWORDS: Fin field effect transistors, Field effect transistors, Optical lithography, Metals, Extreme ultraviolet, Etching, Multiplexers, Dielectrics, Logic devices, Logic

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Showing 5 of 6 publications

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