Terahertz time-domain spectroscopy (THz-TDS) is a useful technology that has a wide range of applications. However, the conventional THz-TDS system is very time-consuming for taking time domain measurements due to the usage of the mechanical stepper. While the existing rapid scan method introduces greater complexity to the system. We developed a rapid scan system for real-time THz acquisition using a rapid shaker as the delay line and utilizing a Michelson interferometer to achieve high-accuracy position tracking of the delay line, which enables real-time time-domain measurement for high-frequency THz electrical fields.
Narrowband terahertz radiation at 1.97 and 2.34 THz is generated via optical rectification in a BaGa4Se7 crystal. Although broadband terahertz radiation is produced in the crystal, absorption occurs due to the dense phonon mode distribution in the low terahertz frequency regime (i.e. <4 THz), thus resulting in narrowband terahertz radiation exiting the crystal. Since this crystal exhibits numerous non-zero second-order nonlinear tensor elements, generation is investigated for various crystal orientations and excitation polarizations. The BaGa4Se7 crystal exhibits higher spectral densities at the generated frequencies of 1.97 and 2.34 THz in comparison to ZnTe. As such, BaGa4Se7 could provide benefits in the areas of security, communication, medicine, quality control, research, and on-chip applications.
We present an efficient and compact laser pulse-pumped terahertz (THz) source suitable for on-chip applications. The THz emitter itself consists of a W(1.8 nm)/Fe(2 nm)/Pt(1.8 nm) metallic trilayer deposited via DC magnetron sputtering. Waveguides and a horn antenna are 3D-printed via 3D lithography and integrated with the emitter, resulting in a 19.6 dB increase in the measured THz power emitted at the design frequency of 1.5 THz.
This conference presentation, “Multi-band photonic sources based on phase-matched second-order nonlinear interactions” was presented at the Ultrafast Phenomena and Nanophotonics XXVI conference at SPIE Photonics West 2022.
This conference presentation, “A method based on complementary transmission and reflection measurements for extracting the optical properties of a thin film” was presented at the Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XV conference at SPIE Photonics West 2022.
Most recently, electrochromic (EC) oxides, such as WO3, have transcended far beyond their traditional scope of transmission modulation in smart windows. The ionically facilitated EC effect, leads to an extraordinary increase in excess charge carriers in the host oxide, effectively doping WO3 up to 1022 cm-3 electrons. With the protonation doping, the dielectric properties of the given oxide can be altered dynamically and locally. Hence, WO3 changes its refractive index from n = 1.9 to 2.3, and its extinction by Δ𝑘 = 0.5 in the near infrared (NIR). Here, we introduce a plasmonic, EC (‘plasmochromic’) nanowaveguide modulator, for ultrahigh modulation depth. WO3 is integrated into a plasmonic metalinsulator- metal (MIM) waveguide structure with a dual-function waveguide core containing amorphous LiNbO3 (LN). In this novel architecture, LN provides sufficient ionic conduction for EC switching, while simultaneously supporting optical mode propagation. By decoupling the ionic pathway and the direction of plasmon propagation, the EC waveguide achieves unprecedented modulation speed and depth when compared to traditional EC devices. FDTD simulations predict a maximum modulation depth of 80 dB for 20 μm waveguide length, while measured values show up to 2.5 dB/μm modulation with switching times of a few seconds. The waveguide platform further provides great retention (> 20 h) of the switching state, while allowing very low operating voltages with a figure of merit of 8 dB/V. We envision EC oxide to provide pathways to dynamic photonic devices under low voltage settings, where high modulation is necessary.
As of late, research related to plasmonic-electrochromic (“plasmochromic”) devices and nanostructures has gained significant interest from a multidisciplinary field of researchers. The dynamic optical properties of electrochromic materials in combination with the enhanced light-matter interaction of plasmonic nanostructures and metal films, makes this new class of devices contenders in the fields of color printing, light, and resonance modulation. While conventionally used in electrochromic smart windows, plasmochromic devices use the individual parts of the refractive index. The most important electrochromic material is tungsten oxide (WO3), which exhibits a high change in the refractive index () and extinction (Delta k=0.5) during reversible ion intercalation. Here, plasmochromic resonance modulation is used to create a dynamic reflective display with a wavelength modulation of over 64 nm in the visible range. The results are verified via FDTD analysis, which projects a maximum wavelength shift of over 100 nm.
Chalcopyrite and chalcogenide crystals are investigated for optical rectification and electro-optic sampling. Broadband and narrowband terahertz radiation is produced using ZnGeP2, CdSiP2, and AgGaSe2 chalcopyrite crystals, as well as a BaGa4Se7 chalcogenide crystal. Broadband terahertz radiation is detected using a ZnGeP2 chalcopyrite crystal. We envision these crystal classes being used to generate and detect terahertz radiation in research and commercial applications.
The linear and nonlinear optical properties are investigated in a <110>-cut, 485 μm-thick AgGaSe2 crystal. The linear optical properties are studied by performing terahertz time-domain spectroscopy measurements, which allow the refractive indices and the extinction coefficients to be calculated for the uniaxial AgGaSe2 crystal. Optical rectification measurements are conducted to investigate the crystal’s nonlinear optical properties, which produce broadband terahertz radiation pulses having spectral components between 0.02 and 4 THz. Due to the large optical rectification coherence length exhibited by the AgGaSe2 crystal, in-phase terahertz radiation is generated across the entire length of this 485 μm-thick crystal. Therefore, this crystal can be utilized as a source of broadband terahertz radiation in areas such as medicine and security.
An approach is proposed to incorporate second-order nonlinear effects into finite-difference time-domain simulations, which allows dispersion to be included for all 18 elements of the second-order nonlinear susceptibility tensor. The developed approach is implemented to investigate optical rectification and difference frequency generation in a bulk LiNbO3 crystal. This method allows for the generalized finite-difference time-domain investigation of second-order nonlinear effects.
Waveguides having a lithium niobate (LiNbO3) core are investigated for the generation of terahertz (THz) radiation, where second-order nonlinear susceptibility enhancement is utilized to produce the THz radiation via optical rectification. Although reststrahlen band losses are high in the vicinity where the nonlinear susceptibility exhibits enhancement, these losses are avoided by restricting the core to have sub-micron dimensions, thus allowing the generated THz radiation to propagate along the guide with >90% of its intensity outside the lossy LiNbO3 core. The generated radiation exhibits a spectral distribution having a central frequency of 5.6 THz and a full-width half maximum bandwidth of 1.3 THz. The THz electric field pulse has an amplitude of 2 kV/cm and is produced at the conversion efficiency of 0.025%.
The generation of visible light from an Au-LiNbO3-Au plasmonic waveguide and a CdSiP2 photonic waveguide is investigated for on-chip applications. Frequency-conversion is achieved through the second-order nonlinear process of second harmonic generation. Broadband electric field pulses having an amplitude of 20 kV/cm are produced by the AuLiNbO3-Au plasmonic waveguide at a conversion efficiency of 11×10-5 . Electric field pulses of 30 kV/cm are observed from the CdSiP2 photonic waveguide, where these fields are generated at the conversion efficiency of 80×10-5 .
Linear and nonlinear terahertz (THz) phenomenon are studied in a cadmium silicon phosphide, CdSiP2, crystal. The ~2 THz phonon mode of the CdSiP2 crystal is probed via THz spectroscopy experiments, allowing phonon-polariton dispersion to be observed in the recorded time-domain signals. In the frequency range of 0.5-2.9 THz, the refractive indices of this uniaxial crystal are determined (allowing the material’s birefringence to be calculated), along with the material’s extinction coefficients. Using a 780 nm central-wavelength pump pulse having a duration of 50 fs, THz generation is achieved in the non-centrosymmetric CdSiP2 crystal. The resulting THz electric field pulse has a bandwidth ranging from 0.07-6 THz. The results of this study suggest CdSiP2 has the potential to find use as low-loss THz waveplates in the frequency range of 0.5-1.9 THz, as well as a broadband THz source.
Terahertz (THz) electric field pulses containing frequency components across an ultra-wide spectrum are important for spectroscopy investigations, and are valuable to improving the application of THz radiation to the security, medical, and communication industries. We perform 2D finite-difference time-domain simulations of sub-wavelength LiNbO3 (LN) waveguides (i.e. waveguides having core dimensions that are sub-wavelength with respect to the femtosecond optical pump pulse). The sub-wavelength aspect of these waveguiding structures maximizes the intensity of the pump pulse in the LN core, while also minimizing the LN reststrahlen band absorption. Notably, Cherenkov radiation is generated at frequencies between 0.18 and 106 THz, where the sub-wavelength nature of the waveguides allows for Cherenkov emission at ~47° over the entire frequency spectrum. Additionally, we show how a 100 μm×1 mm×500 nm waveguide (pumped by a 780 nm, 7 fs, 1 nJ femtosecond pulse) produces a 140 fJ THz electric field pulse.
The relative permittivity (real and imaginary component), absorption coefficient, and loss tangent of various cellulose nanocrystal (CNC) films, a dissolving pulp film, and a CNC powder are obtained by performing terahertz (THz) transmission spectroscopy experiments. The CNC films are constructed using different drying techniques (i.e. air-drying and freeze-drying) and are made from CNCs that have been extracted from various sources (i.e. hardwood, softwood, and dissolving pulp). Between frequencies of 0.2 and 1.5 THz, the real component of the permittivity is seen to range from 1.8-3.3 for the CNC films, suggesting that both the drying technique and CNC source material influence this dielectric property. Importantly, the CNC films are shown to exhibit relatively small THz absorption and loss tangent properties, such that CNC-based dielectric mirrors, waveguides, and transistors may be achieved.
The detection properties of a chalcopyrite zinc germanium diphosphide (ZnGeP2, ZGP) electro-optic (EO) crystal, having thickness of 1080 μm and cut along the <012> plane, is studied in the terahertz (THz) frequency range. Outstanding phase matching is achieved between the optical probe pulse and the THz frequency components, leading to a large EO detection bandwidth. ZGP has the ability to measure frequencies that are 1.3 and 1.2 times greater than that of ZnTe for crystal thicknesses of 1080 and 500 μm, respectively. Furthermore, the ZGP crystal is able to detect frequency components that are ≥4.6 times larger than both ZnSe and GaP (for crystal thicknesses of 1080 μm) and ≥2.2 times larger than ZnSe and GaP (for crystal thicknesses of 500 μm).
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