Dr. Byung-Ho M. Nam Profile

Dr. Byung-Ho M. Nam

Professor at Yeungnam Univ

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Author

Publications (24)

Proceedings Article | 29 October 2014 Paper

A method of utilizing AIMS to quantify lithographic performance of high transmittance mask

Chun Seon Choi, Dong Sik Jang, Sung Hyun Oh, Jae Cheon Shin, Byungho Nam, Tae Joong Ha, Sang Pyo Kim, Dong Gyu Yim

Proceedings Volume 9235, 92351R (2014) https://doi.org/10.1117/12.2066283

KEYWORDS: Photomasks, Transmittance, Semiconducting wafers, Nanoimprint lithography, Lithography, Binary data, Chromium, Etching, Image analysis, Extreme ultraviolet

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Proceedings Article | 20 March 2009 Paper

Evaluation of shadowing and flare effect for EUV tool

James Moon, Cheol-Kyun Kim, Byoung-Sub Nam, Byoung-Ho Nam, Yoon-Suk Hyun, Suk-Kyun Kim, Chang-Moon Lim, Yong-Dae Kim, Mun-Sik Kim, Yong-Kyoo Choi, Chang-Reol Kim, Donggyu Yim

Proceedings Volume 7271, 727144 (2009) https://doi.org/10.1117/12.814364

KEYWORDS: Extreme ultraviolet, Critical dimension metrology, Extreme ultraviolet lithography, Semiconducting wafers, Lithography, Photomasks, Scanning electron microscopy, Wafer testing, Silicon, Light scattering

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Proceedings Article | 18 March 2009 Paper

EUV-patterning characterization using a 3D mask simulation and field EUV scanner

Jun-Taek Park, Yoon-Suk Hyun, Chang-Moon Lim, Tae-Seung Eom, Sunyoung Koo, Sarohan Park, Suk-Kyun Kim, Keun-Do Ban, Hyun-Jo Yang, Chang-Il Oh, Byung-Ho Nam, Chang-Reol Kim, HyeongSoo Kim, Seung-Chan Moon, Sungki Park

Proceedings Volume 7271, 72711G (2009) https://doi.org/10.1117/12.814407

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Scanners, Critical dimension metrology, Extreme ultraviolet, Silicon, Optical lithography, Deep ultraviolet, Semiconducting wafers, Laser scanners

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Proceedings Article | 18 March 2009 Paper

Comparative study of DRAM cell patterning between ArF immersion and EUV lithography

Tae-Seung Eom, Sarohan Park, Jun-Taek Park, Chang-Moon Lim, Sunyoung Koo, Yoon-Suk Hyun, HyeongSoo Kim, Byung-Ho Nam, Chang-Reol Kim, Seung-Chan Moon, Noh-Jung Kwak, Sungki Park

Proceedings Volume 7271, 727115 (2009) https://doi.org/10.1117/12.814378

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Extreme ultraviolet, Optical lithography, Double patterning technology, Lithography, Etching, Critical dimension metrology, Scanners, Immersion lithography

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In this paper, we will present comparison of DRAM cell patterning between ArF immersion and EUV lithography which will be the main stream of DRAM lithography. Assuming that the limit of ArF immersion single patterning is around 40nm half pitch, EUV technology is positioned on essential stage because development stage of device manufacturer is going down sub-40nm technology node. Currently lithography technology, in order to improve the limitation of ArF immersion lithography, double patterning technology (DPT) and spacer patterning technology (SPT) have been examined intensively. However, double patterning and spacer patterning technology are not cost-effective process because of complexity of lithography process such as many hard mask stacks and iterative litho, etch process. Therefore, lithography community is looking forward to improving maturity of EUVL technology. In order to overcome several issues on EUV technology, many studies are needed for device application. EUV technology is different characteristics with conventional optical lithography which are non-telecentricity and mask topography effect on printing performance. The printed feature of EUV is shifted and biased on the wafer because of oblique illumination of the mask. Consequently, target CD and pattern position are changed in accordance with pattern direction, pattern type and slit position of target pattern.1 For this study, we make sub-40nm DRAM mask for ArF immersion and EUV lithography. ArF attenuated PSM (Phase Shift Mask) and EUV mask (LTEM) are used for this experiment; those are made and developed by in-house captive maskshop. Simulation and experiment with 1.35NA ArF immersion scanner and 0.25NA EUV full field scanner are performed to characterize EUV lithography and to compare process margin of each DRAM cell. Two types of DRAM cell patterns are studied; one is an isolation pattern with a brick wall shape and another is a storage node pattern with contact hole shape. Line and space pattern is also studied through 24nm to 50nm half pitch for this experiment. Lithography simulation is done by in-house tool based on diffused aerial image model. EM-SUITE and Solid-EUV are also used in order to study characteristics of EUV patterning through rigorous EMF simulation. We also investigated shadowing effect according to pattern shape and design rule respectively. We find that vertical to horizontal bias is around 2nm on 32nm to 40nm half pitch line and space pattern. In the case of DRAM cell, we also find same result with line and space pattern. In view of mask-making consideration, we optimize absorber etch process. So we acquire vertical absorber profile and mask MTT(Mean To Target) within 10% of target CD through several pitch. Process windows and mask error enhancement factors are measured with respect to several DRAM cell pattern. In the case of one dimensional line and space and two dimensional brick wall pattern, vertical pattern shows the best performance through various pitches because of lower shadowing effect than horizontal pattern. But in case of contact hole DRAM cell pattern such as storage node pattern, it has bigger MEF value than one or two dimensional pattern because of independency of shadowing effect. Finally, we compare with 2x, 3x and 4x DRAM cell patterning performance in terms of pattern fidelity, slit CD uniformity and shadowing effect.

Proceedings Article | 19 March 2008 Paper

DFM application on dual tone sub 50nm device

Byoung-Sub Nam, James Moon, Joo-Hong Jung, Dong-Ho Kong, Se-young Oh, Cheol-Kyun Kim, Byung-Ho Nam, Dong Gyu Yim

Proceedings Volume 6925, 692514 (2008) https://doi.org/10.1117/12.772430

KEYWORDS: Photomasks, Design for manufacturing, Optical proximity correction, Semiconductors, Copper, Semiconducting wafers, Data modeling, Lithographic illumination, Electroluminescence, Optical lithography

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Proceedings Article | 7 March 2008 Paper

Binary and attenuated PSM mask evaluation for sub 50nm device development perspective

James Moon, Byoung-Sub Nam, Joo-Hong Jeong, Dong-Ho Kong, Byung-Ho Nam, Dong Gyu Yim

Proceedings Volume 6924, 692436 (2008) https://doi.org/10.1117/12.772492

KEYWORDS: Photomasks, Binary data, Semiconducting wafers, Electroluminescence, Bismuth, Semiconductors, Laser applications, Lithography, Chromium, Scanning electron microscopy

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Proceedings Article | 1 November 2007 Paper

Automatic residue removal for high-NA extreme illumination

James Moon, Byong-Sub Nam, Joo-Hong Jeong, Dong-Ho Kong, Byung-Ho Nam, Dong Gyu Yim

Proceedings Volume 6730, 67304B (2007) https://doi.org/10.1117/12.746850

KEYWORDS: Scattering, Lithography, Lithographic illumination, Semiconducting wafers, Safety, Optical proximity correction, Data modeling, Wafer testing, Optical parametric oscillators, Semiconductors

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Proceedings Article | 26 March 2007 Paper

Application of full-chip optical proximity correction for sub-60-nm memory device in polarized illumination

Hyoung-Soon Yune, Yeong-Bae Ahn, Dong-jin Lee, James Moon, Byung-Ho Nam, Dong-gyu Yim

Proceedings Volume 6520, 65201R (2007) https://doi.org/10.1117/12.711977

KEYWORDS: Optical proximity correction, Polarization, Calibration, Critical dimension metrology, Data modeling, Lithographic illumination, Resolution enhancement technologies, Lithography, Semiconducting wafers, Line edge roughness

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Proceedings Article | 21 March 2007 Paper

Self-assembled dummy patterns for lithography process margin enhancement

James Moon, Byoung-Sub Nam, Joo-Hong Jeong, Byung-Ho Nam, Dong Gyu Yim

Proceedings Volume 6521, 652118 (2007) https://doi.org/10.1117/12.711253

KEYWORDS: Lithography, Design for manufacturing, Optical proximity correction, Printing, Semiconducting wafers, Inspection, Data modeling, Photomasks, Semiconductors, Design for manufacturability

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Proceedings Article | 20 May 2006 Paper

Highly accurate modeling by using 2-dimensional calibration data set for model-based OPC verification

Cheol-kyun Kim, Jae-Seung Choi, Byung-Ho Nam, DongGyu Yim

Proceedings Volume 6283, 62830V (2006) https://doi.org/10.1117/12.681855

KEYWORDS: Data modeling, Optical proximity correction, Calibration, Semiconducting wafers, Process modeling, Reticles, Instrument modeling, Model-based design, Image analysis, Data processing

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Proceedings Article | 20 May 2006 Paper

The study of contact hole for 65nm node with KrF

Tae-Jun You, Sung-Woo Ko, James Moon, Yeong-Bae Ahn, Byung-Ho Nam, Dong-Gyu Yim

Proceedings Volume 6283, 628336 (2006) https://doi.org/10.1117/12.681825

KEYWORDS: SRAF, Optical lithography, Photomasks, Optical proximity correction, Resolution enhancement technologies, Lithographic illumination, Lithography, Light sources, Phase shifts, Manufacturing

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Proceedings Article | 20 May 2006 Paper

Lithography process margin enhancement using illumination based assist pattern

James Moon, Dong-Jin Lee, Gui-Hwang Sim, Jae-Doo Eum, Byung-Ho Nam, Dong Gyu Yim

Proceedings Volume 6283, 62832X (2006) https://doi.org/10.1117/12.681814

KEYWORDS: Lithography, Lithographic illumination, Photomasks, Safety, Inspection, Critical dimension metrology, Optical proximity correction, Semiconducting wafers, Error analysis

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Proceedings Article | 14 March 2006 Paper

Simple method to verify OPC data based on exposure condition

James Moon, Young-Bae Ahn, Sey-Young Oh, Byung-Ho Nam, Dong Gyu Yim

Proceedings Volume 6156, 61561C (2006) https://doi.org/10.1117/12.656888

KEYWORDS: Optical proximity correction, Inspection, Lithography, Optical simulations, Semiconductors, Data modeling, Data corrections, Bridges, Microelectronics, Data processing

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Proceedings Article | 14 March 2006 Paper

Highly accurate hybrid-OPC method for sub-60nm memory device

Hyoung-Soon Yune, Cheol-Kyun Kim, Yeong-Bae Ahn, Byung-Ho Nam, Donggyu Yim

Proceedings Volume 6156, 61561A (2006) https://doi.org/10.1117/12.656853

KEYWORDS: Optical proximity correction, Data modeling, Model-based design, Calibration, Photomasks, Tolerancing, Process modeling, Instrument modeling, Resolution enhancement technologies, Semiconducting wafers

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Proceedings Article | 14 March 2006 Paper

Considerations of model-based OPC verification for sub-70nm memory device

Cheol-Kyun Kim, Jae-Seung Choi, Byung-Ho Nam, DongGyu Yim

Proceedings Volume 6156, 61561D (2006) https://doi.org/10.1117/12.656852

KEYWORDS: Optical proximity correction, Process modeling, Semiconducting wafers, Model-based design, Instrument modeling, Critical dimension metrology, Data modeling, Tolerancing, Systems modeling, Bridges

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Proceedings Article | 8 November 2005 Paper

Hybrid ORC method for low K1 process

Byungho Nam, Jaeseung Choi, Yeongbae Ahn, Cheolkyun Kim, Hyoungsoon Yune, James Moon, Donggyu Yim, Jinwoong Kim

Proceedings Volume 5992, 59922T (2005) https://doi.org/10.1117/12.632023

KEYWORDS: Optical proximity correction, Critical dimension metrology, Data modeling, Bridges, Inspection, Semiconducting wafers, Calibration, Etching, Mathematical modeling, Photomasks

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Proceedings Article | 28 May 2004 Paper

Double exposure to reduce overall line-width variation of 80-nm DRAM gate

Won Ma, Chang-Moon Lim, Se Oh, Byung Nam, Seung Chan Moon, Ki Shin

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.536358

KEYWORDS: Critical dimension metrology, Semiconducting wafers, Lithography, Optical proximity correction, Transistors, Scanners, Neck, Wafer-level optics, Optical calibration, Fiber optic illuminators

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Proceedings Article | 24 July 2002 Paper

Effect of delay time on the performance of DUV resist for various pattern size and shape

Dong-Seok Kim, Jong O Park, Byung-Ho Nam, Hoon Huh

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474273

KEYWORDS: Deep ultraviolet, Lithography, Contamination, Photoresist processing, Semiconductors, Critical dimension metrology, Photoresist developing, Photoresist materials, Semiconducting wafers, Holmium

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Proceedings Article | 14 September 2001 Paper

Lens aberration measurement and analysis using a novel pattern

Byung-Ho Nam, Byeong-Ho Cho, Jong O Park, Dong-Seok Kim, SungJin Baek, JongHo Jeong, ByungSub Nam, Young Hwang, Young Jin Song

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435665

KEYWORDS: Monochromatic aberrations, Wavefronts, Holmium, Optical lithography, Photomasks, Critical dimension metrology, Lithography, Time metrology, Reticles, Scanning electron microscopy

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Proceedings Article | 22 August 2001 Paper

Wafer scale error induced by bottom antireflective coating

Dong-Seok Kim, JongHo Jeong, Byung-Ho Nam, Young Hwang, Young Jin Song

Proceedings Volume 4344, (2001) https://doi.org/10.1117/12.436784

KEYWORDS: Semiconducting wafers, Optical alignment, Bottom antireflective coatings, Oxides, Manufacturing, Overlay metrology, Coating, Photomasks, Process control, Inspection

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Proceedings Article | 22 January 2001 Paper

Comparison study between stepper (5x) and scanner (4x) for gate CD control using total process-proximity-based correction

Byung-Ho Nam, Dong-Seok Kim, Byung-Jin Cho, Nam-Ki Seok, Jae Jeong, Sang-Pye Kim, Sang-Woo Kang, Young Hwang, Young Jin Song

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410760

KEYWORDS: Scanners, Critical dimension metrology, Photomasks, Etching, Process control, Deep ultraviolet, Semiconducting wafers, Mask making, Optical proximity correction, Control systems

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Proceedings Article | 19 July 2000 Paper

Gate CD control for full chip using total-process-proximity-based correction method

Byung-Ho Nam, Jong O Park, Dai Jong Lee, Jong Ho Cheong, Young Hwang, Young Jin Song

Proceedings Volume 4066, (2000) https://doi.org/10.1117/12.392101

KEYWORDS: Critical dimension metrology, Photomasks, Etching, Semiconducting wafers, Phase shifts, Lithographic illumination, Dry etching, Lithography, Process control, Optical proximity correction

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Proceedings Article | 7 July 1997 Paper

Optimal design of antireflective layer for DUV lithography and experimental results

Seung-Gol Lee, Kyung-Il Lee, Choong-Ki Seo, Jong-Ung Lee, Yongkyoo Choi, Byung-Ho Nam, Jeong Yu, Jae-Keun Jeong

Proceedings Volume 3049, (1997) https://doi.org/10.1117/12.275842

KEYWORDS: Reflectivity, Lithography, Antireflective coatings, Photoresist materials, Deep ultraviolet, Optical properties, Visualization, Tolerancing, Optical lithography, Thin films

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Proceedings Article | 7 June 1996 Paper

Probe-beam scan-type autofocus system using position-sensing detector for sub-half-micron lithography tools

Dohoon Kim, Byung-Ho Nam, Kag Hyeon Lee, Hai Bin Chung, Hyung Joun Yoo

Proceedings Volume 2726, (1996) https://doi.org/10.1117/12.240977

KEYWORDS: Semiconducting wafers, Laser beam diagnostics, Sensors, Wafer-level optics, Lithography, Reflectivity, Error analysis, Sensing systems, Mirrors, Signal processing

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Showing 5 of 24 publications

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