Dr. Catherine B. Labelle Profile

Dr. Catherine B. Labelle

SPIE Involvement:

Conference Program Committee | Editorial Board Member: Journal of Micro/Nanopatterning, Materials, and Metrology | Author | Editor

Area of Expertise:

Etch , Plasma Processing

Websites:

Company Website

SPIE Journal Paper | 28 December 2023 Open Access

Special Section Guest Editorial: Plasma Modeling and Feature Profile Simulation

Catherine Labelle, Mark Kushner

JM3, Vol. 22, Issue 04, 041501, (December 2023) https://doi.org/10.1117/12.10.1117/1.JMM.22.4.041501

KEYWORDS: Plasma, Modeling, Computer simulations, Systems modeling, Process modeling, Microelectronics, Machine learning, Design, Vacuum chambers, Semiconductor manufacturing

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Proceedings Article | 9 April 2018 Paper

Introduction of pre-etch deposition techniques in EUV patterning

Xun Xiang, Genevieve Beique, Lei Sun, Andre Labonte, Catherine Labelle, Bhaskar Nagabhirava, Phil Friddle, Stefan Schmitz, Michael Goss, Dominik Metzler, John Arnold

Proceedings Volume 10589, 105890K (2018) https://doi.org/10.1117/12.2297413

KEYWORDS: Etching, Extreme ultraviolet, Deposition processes, Optical lithography, Line width roughness, Line edge roughness, Plasma etching, Photoresist processing, Plasma, Extreme ultraviolet lithography

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Proceedings Article | 24 March 2016 Paper

LER improvement for sub-32nm pitch self-aligned quadruple patterning (SAQP) at back end of line (BEOL)

Nihar Mohanty, Richard Farrell, Cheryl Periera, Kal Subhadeep, Elliott Franke, Jeffrey Smith, Akiteru Ko, Anton DeVilliers, Peter Biolsi, Lei Sun, Genevieve Beique, Erik Hosler, Erik Verdujn, Wenhui Wang, Cathy Labelle, Ryoung-han Kim

Proceedings Volume 9782, 97820Q (2016) https://doi.org/10.1117/12.2219259

KEYWORDS: Etching, Line edge roughness, Optical lithography, Back end of line, Chemistry, Front end of line, Lithography, Ions, Amorphous silicon, Extreme ultraviolet

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Proceedings Article | 23 March 2016 Paper

Plasma etch patterning of EUV lithography: balancing roughness and selectivity trade off

Vinayak Rastogi, Genevieve Beique, Lei Sun, Hongyun Cottle, Yannick Feurprier, Andrew Metz, Kaushik Kumar, Cathy Labelle, John Arnold, Matthew Colburn, Alok Ranjan

Proceedings Volume 9782, 97820B (2016) https://doi.org/10.1117/12.2216840

KEYWORDS: Line edge roughness, Line width roughness, Plasma etching, Plasma, Etching, Optical lithography, Extreme ultraviolet, Photoresist processing, Extreme ultraviolet lithography, Lithography, Materials processing, Ions, Chemistry

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Proceedings Article | 17 March 2015 Paper

Plasma etch challenges with new EUV lithography material introduction for patterning for MOL and BEOL

Changwoo Lee, Bhaskar Nagabhirava, Michael Goss, Peng Wang, Phil Friddle, Stafan Schmitz, Jian Wu, Richard Yang, Yann Mignot, Nouradine Rassoul, Bassem Hamieh, Genevieve Beique, Andre Labonte, Catherine Labelle, John Arnold, John Mucci

Proceedings Volume 9428, 94280A (2015) https://doi.org/10.1117/12.2087133

KEYWORDS: Etching, Line edge roughness, Optical lithography, Extreme ultraviolet, Plasma, Line width roughness, Plasma etching, Extreme ultraviolet lithography, Photomasks, Ions

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Proceedings Article | 17 March 2015 Paper

Trench and hole patterning with EUV resists using dual frequency capacitively coupled plasma (CCP)

Yannick Feurprier, Katie Lutker-Lee, Vinayak Rastogi, Hiroie Matsumoto, Yuki Chiba, Andrew Metz, Kaushik Kumar, Genevieve Beique, Andre Labonte, Cathy Labelle, Yann Mignot, Bassem Hamieh, John Arnold

Proceedings Volume 9428, 94280F (2015) https://doi.org/10.1117/12.2086519

KEYWORDS: Etching, Optical lithography, Extreme ultraviolet, Plasma, Plasma etching, Photomasks, Photoresist processing, Line edge roughness, Line width roughness, Extreme ultraviolet lithography

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Proceedings Article | 17 March 2012 Paper

Plasma etch challenges for porous low-k materials for 32nm and beyond

C. Labelle, R. Srivastava, Y. Yin, TQ Chen, R. Koshy, Y. Mignot, J. Arnold, D. Horak

Proceedings Volume 8328, 83280C (2012) https://doi.org/10.1117/12.916608

KEYWORDS: Etching, Dielectrics, Optical lithography, Plasma etching, Back end of line, Double patterning technology, Critical dimension metrology, Plasma, Reactive ion etching, Line edge roughness

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Proceedings Article | 17 November 2005 Paper

Low-k/copper integration scheme suitable for ULSI manufacturing from 90nm to 45nm nodes

T. Nogami, S. Lane, M. Fukasawa, K. Ida, M. Angyal, K. Chanda, F. Chen, C. Christiansen, S. Cohen, M. Cullinan, C. Dziobkowski, J. Fitzsimmons, P. Flaitz, A. Grill, J. Gill, K. Inoue, N. Klymko, K. Kumar, C. Labelle, M. Lane, B. Li, E. Liniger, A. Madon, K. Malone, J. Martin, V. McGahay, P. McLaughlin, I. Melville, M. Minami, S. Molis, S. Nguyen, C. Penny, D. Restaino, A. Sakamoto, M. Sankar, M. Sherwood, E. Simonyi, Y. Shimooka, L. Tai, J. Widodo, H. Wildman, M. Ono, D. McHerron, H. Nye, C. Davis, S. Sankaran, D. Edelstein, T. Ivers

Proceedings Volume 6002, 60020L (2005) https://doi.org/10.1117/12.633066

KEYWORDS: Chemical mechanical planarization, Plasma, Back end of line, Photomasks, Manufacturing, Copper, Plasma enhanced chemical vapor deposition, Etching, Capacitance, Reliability

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