A silicon-integrated Schottky metal-insulator-semiconductor plasmonic modulator with remarkable optical loss performance is demonstrated. The proposed device architecture is realized through the heterogeneous integration of amorphous aluminum, silica, and indium tin oxide, forming a metal-insulator-semiconductor plasmonic stack housed on an SOI substrate. The device exhibited extinction ratio and insertion loss levels of 1 dB/μm and 0.128 dB/μm, respectively for a 10 μm-long waveguide. By taking advantage of the absence of diffraction limits in plasmonic structures, strong modal confinement proved possible as evidenced by simulation results, paving the way for improved optical processes and miniaturized photonic circuits.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.