This work investigates the reactive ions etching (RIE) physical properties of n-type ZnO using H2/CH4 and H2/CH4/Ar
mixtures by varying the gas flow ratio, the radio-frequency (rf) plasma power and the chamber pressure. Atomic force
microscopy (AFM) results and surface topographies are discussed. Although the etching rate of the n-ZnO at an H2/CH4
flow rate of 100/0 sccm, a work pressure of 100 mTorr and an rf power of 300 W is lower than under any other
conditions, the rms roughness of 43.78 nm is the highest, and supports the application of roughened transparent contact
layer (TCL) in light-emitting diodes (LEDs). The dynamics associated with the high etching rate were highly efficient at
an H2/CH4/Ar flow rate of 38/5/57 sccm, a work pressure of 150 mTorr and an rf power of 300 W. In addition, the ZnO
with thermal annealing were studied. The slower etching rate of annealed n-ZnO is observed due to an increase the
crystal quality of the ZnO films after thermal annealing which consists with the x-ray diffraction (XRD) results.
We have prepared bulk p-AlInGaN layers and light emitting diodes (LEDs) with p-AlInGaN surface layers by
metalorganic chemical vapor deposition (MOCVD). It was found that surfaces of the LEDs with p-AlInGaN layers were
rough with high density of hexagonal pits. It was also found that pit width and pit density depend on the growth
temperature of the p-AlInGaN layer. Furthermore, it was found that we can achieve 62% enhancement in output
intensity from the LED with 820°C p-AlInGaN cap layer without increasing the LED operation voltage.
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