Metrology and inspection (MI) processes are established at critical points of the semiconductor manufacturing process in order to maintain a certain yield and also provide information needed for future processes improvements. Typically, the inspection consists of dark-field (DF) inspection and SEM review/classification processes. An optical DF microscopy system (or inspection tool) first detects particles or pattern defects on wafers and obtains their position coordinates. However, due to its limited optical resolution, the DF system is not widely applied in the review process, which requires higher resolution images of the detected defects such as those provided by scanning electron microscopy (SEM) but with a sacrifice of throughput. We propose an innovative idea of applying two (or three) dark-field microscopy images for intermediate defect classification and size estimation under optical resolution. The proposed method utilizes the angular scattering distribution from a defect that is in the Mie scattering domain, which varies depending on both the beam and defect properties (wavelength, polarization, incident angle; shape, size, complex refractive index). It captures three darkfield images of the same wafer by three inter-changeable objectives with different magnification and numerical aperture (NA) values under identical side illumination conditions. We estimate the defect types and sizes simply by investing three measurements. We demonstrated this proposed method to classify and estimate the defect size down to ~ 80nm by an existing UV inspection tool with three DF imaging modes; 1) M15 mode, sampling stance = 150 nm, NA =0.6, 2) M25 mode, sampling distance = 250 nm, NA=0.36, and 3) M40 mode, sampling distance =400 nm, and NA =0.23. We demonstrated its feasibility by an independent SEM measurement of the detected defects.
Through-focus optical microscopy (TSOM) with nanometer-scale lateral and vertical sensitivity levels matching those of scanning electron microscopy has been demonstrated to be useful both for 3D inspections and metrology assessments. In 2014, funded by two private companies (Nextin/Samsung Electronics) and the Korea Evaluation Institute of Industrial Technology (KEIT), a research team from four universities in South Korea set out to investigate core technologies for developing in-line TSOM inspection and metrology tools, with the respective teams focusing on optics implementation, defect inspection, computer simulation and high-speed metrology matching. We initially confirmed the reported validity of the TSOM operation through a computer simulation, after which we implemented the TSOM operation by throughfocus scanning of existing UV (355nm) and IR (800nm) inspection tools. These tools have an identical sampling distance of 150 nm but have different resolving distances (310 and 810 nm, respectively). We initially experienced some improvement in the defect inspection sensitivity level over TSV (through-silicon via) samples with ~ 6.6 μm diameters. However, during the experiment, we noted sensitivity and instability issues when attempting to acquire TSOM images. As TSOM 3D information is indirectly extracted by differentiating a target TSOM image from reference TSOM images, any instability or mismatch in imaging conditions can result in measurement errors. As a remedy to such a situation, we proposed the application of adaptive optics to the TSOM operation and developed a closed-loop system with a tip/tilt mirror and a Shack-Hartmann sensor on an optical bench. We were able to keep the plane position within in RMS 0.4 pixel by actively compensating for any position instability which arose during the TSOM scanning process along the optical axis. Currently, we are also developing another TSOM tool with a deformable mirror instead of a tip/tilt mirror, in which case we will not require any mechanical scanning.
Through-Focus Optical Microscopy (TSOM), with nanometer scale lateral and vertical sensitivity matching those of scanning electron microscopy, has been demonstrated to be utilized for 3D inspection and metrology. There have been sensitivity and instability issues in acquiring through-focus images because TSOM 3D information is indirectly extracted by differentiating a target TSOM image from reference TSOM images. This paper first reports on the optical axis instability that occurs during the scanning process of TSOM when implemented in an existing patterned wafer inspection tool by moving the wafer plane; this is followed by quantitative confirmation of the optical/mechanical instability using a new TSOM tool on an optical bench with a Shack-Hartmann wavefront sensor and a tip/tilt sensor. Then, this paper proposes two tip/tilt compensated TSOM optical acquisition methods that can be applied with adaptive optics. The first method simply adopts a tip/tilt mirror with a quad cell in a simple closed loop, while the second method adopts a highorder deformable mirror with a Shack-Hartmann sensor. The second method is able to correct high-order residual aberrations as well as to perform through-focus scanning without z-axis movement, while the first method is easier to implement in pre-existing wafer inspection systems with only minor modification.
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