In this paper, a patterning approach via i-line grayscale exposure is presented. The i-line wafer stepper (NIKON NSR2205i11D) together with specialized grayscale reticles from Benchmark Technologies (USA), manufactured with half-toning technique, are used. The positive tone and low contrast grayscale ma-P 1275G photoresist is manufactured by Micro Resist Technology (Berlin, Germany) and used in this work; it is part of the ma-P 1200G grayscale resist series and can cover a thickness range of 5 μm to 14 μm. The lithographical pattering process is performed on 6-inch wafers. Essential parameters like the contrast curve measured in the resist as well as after the dry etching are evaluated. Different 2.5D structures like micro lens arrays, blazed gratings, frustums and Fresnel lenses are fabricated by i-line stepper gray scale lithography and ma-P 1275G demonstrating its excellent behavior to generate 2.5D grayscale patterns. For the characterization of the generated 2.5D grayscale patterns a stylus profilometer, atomic force microscopy (AFM), scanning electron microscopy (SEM) and confocal microscope are used. In this paper the process of setting up a grayscale exposure with an i-line stepper and a grayscale reticle and the need to adapt the grayscale reticle in different iterations is presented and discussed.
In this study, we present a novel approach combining nano-scale imprint lithography (NIL) and reactive ion etching (RIE) to fabricate high-quality surface relief gratings (SRGs). This study provides valuable insights into the challenges and optimizations in fabricating SRGs from TiO2 layers using the combination of NIL and RIE. The work was performed with SCHOTT RealView® substrates coated with a 100 nm TiO2 layer and a NIL mask with pattern widths of 200 nm and a pitch of 400 nm. The substrates were processed using the SmartNIL® method to prepare the NIL mask. The advantage of removing the residual layer before the actual structuring of the TiO2 using argon plasma was demonstrated in our research. This led to a significant increase in the selectivity between TiO2 and the NIL resist UV/OA R18. Through the employment of a two-step etching process, which involved the removal of the residual layer with argon plasma and the use of a BCl3-based reactive process with high ion energy, TiO2 structures with a height of 100 nm and a sidewall angle of 75° were successfully created. An effective selectivity of 0.84 was achieved for this two-step process.
Photonic Integrated Circuits (PICs) play a crucial role in shaping the future of quantum technology, communications, and sensor applications. With a transparency window ranging from ultraviolet to visible to mid-infrared light and a high bandgap of 6.2 eV, aluminium nitride (AlN) is ideal for a wide range of optical applications.
Within the upcoming PIC platform, we have designed, fabricated, and examined various ring resonators, comprised of coupling structures, waveguides and ring resonators, tailored for the optical L-band (1565 nm – 1625 nm). The arrangement of the coupling structures for incoupling the light from a laser source and outcoupling of the light to a detector allows for automatic probing and mapping of various structure modifications. With grating couplers integrated on the chip, these optical structures can be linked to a tunable laser source and a detector via optical fibers.
We compare the fabrication results of the optical nanostructures for the AlN-based devices with previous results from Si3N4-based structures. To ensure the ideal structure dimensions and to minimize deviations from the simulated design values, the AlN dry etch process has been investigated and improved.
In this paper the development of an intra-level mix and match (ILM&M) process, an expression for the exposure of one resist layer with at least two different exposure technologies, for the negative tone resist mr-EBL 6000.5 (micro resist technology, Germany) is demonstrated. Process development is conducted on a layout with photonic integrated circuit (PIC) related waveguides (WG), ring resonators and coupling structures on 150 mm silicon wafers with a 1000 nm SiO2 layer and a 450 nm low pressure (LP) Si3N4 layer on top. In order to match the intended structure dimensions perfectly, the ideal exposure dose has to be determined with an i-line wafer stepper and in parallel with an e-beam lithography (EBL) system. In addition, different post exposure bake (PEB) processes and their influence on resulting structures, which are investigated by means of CD-SEM and profilometer measurements are investigated. It is shown, that regarding pattern fidelity, coupling structures exposed by EBL match the layout design better than those exposed by the i-line stepper. For the purpose of further optimizing the matching of generated coupling structures to the targeted design, different proximity effect correction (PEC) parameter sets are applied. CD-SEM measurements reveal the PEC parameter set which is most suitable for generating the targeted coupling structures. By combining the measurement results of structures exposed with different exposure doses and selecting the best PEC parameter set regarding structure dimensions and pattern fidelity, a processing recipe for an e-beam/i-line stepper ILM&M with the negative tone resist mr-EBL 6000.5 is successfully established.
As part of a future optical platform on-chip, we present a waveguide integrated tunable Fabry-Pérot Interferometer (FPI) for the long infrared wavelength range. The FPI consists of two parallel Bragg reflectors that are located at the ends of two waveguides facing each other. The waveguides are made of silicon and are suspended in air. The reflectors are realized as an alternating stack of silicon and air layers with high (H) and low (L) refractive index. The filter transmittance is evaluated by analytic calculations and electromagnetic finite difference time domain simulations. Filters with (HL)² layer stack show a full width half maximum of 270 nm and a peak transmittance of more than 25% at a wavelength of 9.4 μm at the first interference order in the simulation. It is evaluated by measurements. A MEMS actuator is used to tune the filter wavelength by changing the distance between both reflectors. A digital electrostatic actuator concept with a linear drive characteristic, designed for a large travel range up to 4 μm with a driving voltage of less than 30 V, is presented and evaluated together with the filter. The MEMS fabrication process for the structures is based on bonding and deep reactive ion etching (DRIE). The DRIE etch process was optimized, hereafter achieving a reduced roughness of less than 3 nm of the waveguide sidewalls. For transmission measurements the silicon waveguides are coupled to a laser source and a detector using optical fibers together with optical couplers on the chip. The filter performance was characterized in the range from 9μm to 9.4 μm.
In this paper, we describe a lithographic technique of exposing complex patterns with an advanced resist processing that connects the high resolution of electron beam lithography and the fast exposure of optical i-line stepper lithography via an Intra Level Mix and Match (ILM&M) approach. The key element of our approach is that we use two successive exposures on one single resist layer directly followed by a single resist development. Process and resist characterization of negative tone resist ma-N 1402 as well as a resolution study for each lithographic tools involved. Lithographic performance of negative tone resist ma-N 1402 has shown structures with dimensions of 55 nm with 300 nm pitch for ebeam lithography (VISTEC SB254, shaped beam) and 350 nm structures for i-line stepper (Nikon NSR 2205i11D). Resist footing problem in structures exposed by i-line stepper is solved by introducing a 200 nm thick bottom antireflective coating AZ BARLI II in ILM&M resist processing sequence. A general processing recipe for electron beam/i-line stepper ILM&M with negative tone resist ma-N 1402 is successfully developed and patterns with different dimensions ranging from sub 100 nm to μm scale were reproducibly fabricated on the same resist layer.
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