In this paper, we report that integrated pyroelectric infrared(IR) sensor array using surface micromachine
technique with nMOS/nJFET devices on epitaxial γ-Al2O3/Si substrates has been successfully fabricated. Orientation
and crystallinity control of pyroelectric and ferroelectric films are important to archive high sensitivity pyroelectric IR
detector. We propose epitaxial γ-Al2O3 thin films as buffer layer on Si substrates to control them. Each pixel of
fabricated IR sensor array has a thermally isolated Au/PZT(001)/Pt(001)/γ-Al2O3 stacked membrane detector, a low
noise nJFET source follower and a switching nMOSFET. A voltage sensitivity of a fabricated detector is increased by
forming thermal isolated structure. The fabricated sensor operated under a chopping frequency of 100 Hz. The RV,
NEP and D* at 30 Hz are 1703 V/W, 7.22 × 10-11 WHz-1/2 and 1.38 × 108 cmHz1/2W-1, respectively. This sensor will
have potential for Si integrated pyroelectric IR imager.
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