KEYWORDS: Semiconductor lasers, Reliability, Failure analysis, Data modeling, High power lasers, Near field optics, Process control, Statistical analysis, Near field, Continuous wave operation
This paper presents reliable high power and high brightness 9xx-nm single emitter laser diodes, which have been
designed for various multi-emitter fiber-coupled modules. Diode lasers from legend generation have been life-tested
with currents up to 14A at heat-sink and junction temperatures of 50°C and 80°C respectively, and have accumulated
more than 15,000 hours of life-test duration. In order to further improve reliable operational power and optimize beam
quality, new generation devices have been developed. The new devices demonstrated more than 20W CW rollover
power without catastrophic optical mirror damage (COMD). Near-field/far-field patterns have also been improved
significantly. In addition to step-stress life-tests, a 7-level multi-cell life-test was designed to investigate acceleration
factors relative to the operation conditions. Junction temperatures ranging from 60°C to 110°C and current from 14A
to 18A were used in this multi-cell life-test. The ongoing multi-cell life-test has accumulated 1.3 million raw device
hours and shown very few device failures in up to 7000 hours duration. Such a low failure rate doesn't allow a
meaningful estimation of acceleration factors. When nominal acceleration factors are used, multi-cell life-test data
supports ~500 FIT, with 90% confidence, at 10W, 33°C/50°C heat-sink/junction temperatures.
Performance, lifetest data, as well as failure modes from two different device structures will be discussed in this paper,
with emitting wavelengths from 780nm to 800nm. The first structure, designed for high temperature operation, has
demonstrated good reliability on various packages with output power up to 10W from a 200μm emitting area. The device
structure can be operated up to 60°C heatsink temperatures under CW conditions. Then a high efficiency structure is
shown with further improvement on operation power and reliability, for room temperature operation. With ongoing
lifetest at 12A and 50°C heatsink temperature, <1000 FIT has been achieved for 6.5W and 33°C operation, on both
designs. MTT10%F at 10W and 25°C operation is estimated to be more than 20,000 hours. Devices retain more than 20W
rollover power under CW conditions, when re-tested after several thousand hours of accelerated lifetest. Paths for
reliability improvement will also be discussed based on observed lifetest failure modes from these two structures.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.