Mr. Daniel A. Miller Profile

Daniel A. Miller

Laser Design Engineer at Leonardo DRS

SPIE Involvement:

Author

Publications (13)

Proceedings Article | 30 July 2002 Paper

Aberration determination in early 157-nm exposure system

Bruce Smith, Will Conley, Cesar Garza, Jeff Meute, Daniel Miller, Georgia Rich, Victoria Graffenberg, Kim Dean, Shashikant Patel, Arnie Ford, James Foster, Marco Moers, Kevin Cummings, James Webb, Paul Dewa, Azeddine Zerrade, Susan MacDonald, Greg Hughes, Peter Dirksen

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474551

KEYWORDS: Photomasks, Monochromatic aberrations, Scanning electron microscopy, Image processing, Lithography, Manufacturing, Imaging systems, Wavefronts, Zernike polynomials, Edge detection

Read Abstract +

Proceedings Article | 24 July 2002 Paper

Parameter extraction for 157-nm photoresists

Joseph Bendik, Will Conley, Daniel Miller, Paul Zimmerman, Kim Dean, John Petersen, Jeff Byers

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474174

KEYWORDS: Lithography, Photoresist materials, Data modeling, Absorption, Systems modeling, FT-IR spectroscopy, Metrology, Transparency, Scanning electron microscopy, Opacity

Read Abstract +

Proceedings Article | 24 July 2002 Paper

Dissolution inhibitors for 157-nm microlithography

Will Conley, Daniel Miller, Charles Chambers, Brian Osborn, Raymond Hung, Hoang Tran, Brian Trinque, Matthew Pinnow, Takashi Chiba, Scott McDonald, Paul Zimmerman, Ralph Dammel, Andrew Romano, C. Grant Willson

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474282

KEYWORDS: Polymers, Absorbance, Photoresist materials, Imaging systems, Lithography, Semiconducting wafers, Transparency, Optical lithography, Vacuum ultraviolet, Phase measurement

Read Abstract +

Proceedings Article | 24 July 2002 Paper

Negative photoresist for 157-nm microlithography; a progress report

Will Conley, Brian Trinque, Daniel Miller, Paul Zimmerman, Takanori Kudo, Ralph Dammel, Andrew Romano, C. Grant Willson

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474187

KEYWORDS: Photoresist materials, Polymers, Absorbance, Semiconducting wafers, Spectroscopy, Transparency, Photomasks, Silicon, FT-IR spectroscopy, Optical lithography

Read Abstract +

Proceedings Article | 24 August 2001 Paper

Transparent resins for 157-nm lithography

Ralph Dammel, Raj Sakamuri, Andrew Romano, Richard Vicari, Cheryl Hacker, Will Conley, Daniel Miller

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436865

KEYWORDS: Polymers, Etching, Absorbance, Lithography, Dry etching, Photoresist materials, Fluorine, Absorption, Transparency, Photomasks

Read Abstract +

Proceedings Article | 24 August 2001 Paper

Photoresist outgassing at 157 nm exposure

Stefan Hien, Steve Angood, Dominic Ashworth, Steve Basset, Theodore Bloomstein, Kim Dean, Roderick Kunz, Daniel Miller, Shashikant Patel, Georgia Rich

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436834

KEYWORDS: Fluorine, Polymers, Contamination, Oxygen, Photoresist materials, Plasma, Absorption, Silicon, Vacuum ultraviolet, Molecules

Read Abstract +

Contamination of optical elements during photoresist exposure is a serious issue in optical lithography. The outgassing of photoresist has been identified as a problem at 248nm and 193nm in production because the organic films that can be formed on an exposure lens can cause transmission loss and sever image distortion. At these exposure energies, the excitation of the photo acid generator, formation of acid, and cleavage of the protecting group are highly selective processes. At 157nm, the exposure energy is much higher (7.9 eV compared to 6.4 eV at 193nm) and it is known from laser ablation experiments that direct laser cleavage of sigma bonds occurs. The fragments formed during this irradiation can be considered as effective laser deposition precursors even in the mid ppb level. In this study, methods to quantify photoresist outgassing at 157 nm are discussed. Three criteria have been set up at International SEMATECH to protect lens contamination and to determine the severity of photoresist outgassing. First, we measured film thickness loss as a function of exposure dose for a variety of materials. In a second test we studied the molecular composition of the outgassing fragments with an exposure chamber coupled to a gas chromatograph and a mass spectrometer detector. Our third method was a deposition test of outgassing vapors on a CaF₂ proof plate followed by analysis using VUV and X-ray photoelectron spectroscopies (XPS). With this technique we found deposits for many different resists. Our main focus is on F- and Si- containing resists. Both material classes form deposits especially if these atoms are bound to the polymer side chains. Whereas the F-containing films can be cleaned off under 157nm irradiation, cleaning of Si-containing films mainly produces SiO₂. Our cleaning studies of plasma deposited F-containing organic films on SiO₂ did not indicate damage of this surface by the possible formation of HF. Despite that we strongly recommend engineering measures to overcome contamination by resist, such as optimizing the purge flow between the final lens element and wafer surface or utilization of a lens pellicle.

Proceedings Article | 20 October 2000 Paper

Hardmask/BARC materials for 157-nm lithography

Won Kim, Daniel Miller, Hyeong-Soo Kim, Jeff Byers, Mike Daniels, Britton Birmingham, James Tompkins

Proceedings Volume 4226, (2000) https://doi.org/10.1117/12.404844

KEYWORDS: Etching, Lithography, Dielectrics, Silicon, Silicon carbide, Optical lithography, Absorption, Photoresist processing, Tin, Semiconducting wafers

Read Abstract +

Proceedings Article | 23 June 2000 Paper

193-nm photoresists at 130-nm node: which lithographic performances for which chemical platform?

Gilles Amblard, Jeff Byers, Wolf-Dieter Domke, Georgia Rich, Victoria Graffenberg, Shashikant Patel, Daniel Miller, Gabriel Perez

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388323

KEYWORDS: Monochromatic aberrations, Chlorine, Etching, Photoresist materials, Lithography, Silicon, Polymers, Critical dimension metrology, Semiconducting wafers, Aluminum

Read Abstract +

Proceedings Article | 29 June 1998 Paper

Optimization of etch conditions for a silicon-containing methacrylate-based bilayer resist for 193-nm lithography

Thomas Steinhaeusler, Allen Gabor, Daniela White, Andrew Blakeney, David Stark, Daniel Miller, Georgia Rich, Victoria Graffenberg, Kim Dean

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312373

KEYWORDS: Etching, Plasma etching, Resistance, Lithography, Silicon, Photoresist processing, Plasma, Standards development, Image resolution, Oxides

Read Abstract +

Proceedings Article | 28 July 1997 Paper

Effect of phase error on 180-nm and 250-nm grouped-line KrF lithography using an alternating phase-shift mask

John Petersen, Alvina Williams, Georgia Rich, Daniel Miller, Arturo Martinez

Proceedings Volume 3096, (1997) https://doi.org/10.1117/12.277282

KEYWORDS: Error analysis, Binary data, Etching, Photomasks, Lithography, Image analysis, Reticles, Phase shifts, Optics manufacturing, Critical dimension metrology

Read Abstract +

Proceedings Article | 14 June 1996 Paper

Highly absorbing ARC for DUV lithography

Edward Pavelchek, James Meador, Douglas Guerrero, James Lamb, Ajit Kache, Manuel doCanto, Timothy Adams, David Stark, Daniel Miller

Proceedings Volume 2724, (1996) https://doi.org/10.1117/12.241867

KEYWORDS: Photoresist materials, Etching, Coating, Absorbance, Silicon, Oxides, Lithography, Deep ultraviolet, Antireflective coatings, Reflectivity

Read Abstract +

Proceedings Article | 9 June 1995 Paper

Nonconstant diffusion coefficients: short description of modeling and comparison to experimental results

John Petersen, Chris Mack, John Sturtevant, Jeff Byers, Daniel Miller

Proceedings Volume 2438, (1995) https://doi.org/10.1117/12.210378

KEYWORDS: Diffusion, Lithography, Photoresist materials, Optical lithography, Semiconducting wafers, Chemically amplified resists, Polymers, Data modeling, Data conversion, Deep ultraviolet

Read Abstract +

Proceedings Article | 9 June 1995 Paper

Characterization and modeling of a positive-acting chemically amplified resist

John Petersen, Chris Mack, James Thackeray, Roger Sinta, Theodore Fedynyshyn, J. Michael Mori, Jeff Byers, Daniel Miller

Proceedings Volume 2438, (1995) https://doi.org/10.1117/12.210377

KEYWORDS: Diffusion, Data modeling, Data conversion, Chemically amplified resists, Lithography, Photoresist processing, Polymers, Semiconducting wafers, Amplifiers, Temperature metrology

Read Abstract +

Showing 5 of 13 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years