We report the first direct diode laser module integrated with a trepanning optic for remote oscillation welding. The trepanning optic is assembled with a collimated DirectProcess 900 laser engine. This modular laser is based on single emitters and beam combiners to achieve fiber coupled modules with a beam parameter product or BPP < 8 mm mrad at all power levels up to 1 kW, as well as free space collimated outputs with even lower BPP. The initial design consists in vertically stacking several diodes in the fast axis which leads to a rectangular output of about 100 W with BPP of <3.5 mm*mrad in the fast axis and <5 mm*mrad in the slow axis. Next, further power scaling is accomplished by polarization combining and wavelength multiplexing yielding high optical efficiencies of more than 80% and resulting in a building block module with over 500 W launched into a 100 μm fiber with 0.15 NA. The beam profile of the free space module remains rectangular, with a nearly flat top and conserves the beam parameter product of the original vertical stack without the power loss of fiber coupling. The 500 W building blocks feature a highly flexible emitting wavelength bandwidth. New wavelengths can be configured by simply exchanging parts and without modifying the production process. This design principle provides the option to adapt the wavelength configuration to match a broad set of applications, from the UV to the visible and to the far IR depending on the commercial availability of laser diodes. This opens numerous additional applications like laser pumping, scientific and medical applications, as well as materials processing applications such as cutting and welding of copper aluminum or steel. Furthermore, the module’s short lead lengths enable very short pulses. Integrated with electronics, the module’s pulse width can be adjusted from micro-seconds to cw mode operation by simple software commands. An optical setup can be directly attached instead of a fiber to the laser module thanks to its modular design. This paper’s experimental results are based on a trepanning optic attached to the laser module. Alltogether the setup approximately fits in a shoe box and weighs less than 20 kg which allows for direct mounting onto a 3D-gantry system. The oscillating weld performance of the 500 W direct diode laser utilizing a novel trepanning optic is discussed for its application to aluminum/aluminum and aluminum/copper joints.
David Ashkenasi, Tristan Kaszemeikat, Norbert Mueller, Matthias Schmidt, Hans Joachim Eichler, Maurice Clair, Tino Petsch, Jens Hänel, Markus Lasch, Christian Scholz
Drilling of micro through-holes in defined geometry, i.e. entrance diameter and taper, is gaining in importance in
different fields of application and production. To exploit the advantages of laser technology for micro machining,
versatile trepanning systems based on rotating optics have been designed and implemented. The advanced trepanning
systems enable the controlled adjustment of beam displacement and inclination during operation. With a patented
measuring device, the angular position of the rotating optics is determined online. The presented compact and lowweight
trepanning systems can drill differently tapered through-holes with a diameter in a range of 50 to 1500 μm.
Various solid-state laser sources have been used in combination with the presented laser trepanning system for material
ablation. The wavelength und pulse width range from 355 to 1550 nm and sub-ps to 100 ns. The novel trepanning
systems have been customized for different applications, ranging from basic research quest to industrial production. This
presentation outlines the development steps and application results, accenting laser micro drilling of up to 1 mm thick
metal and dielectric samples.
New laser processing strategies in micro processing of glass, quartz and other optically transparent materials are being
developed with increasing effort. Utilizing diode-pumped solid-state laser generating nanosecond pulsed green (532 nm)
laser light in conjunction with either scanners or special trepanning systems can provide for reliable glass machining at
excellent efficiency. Micro ablation can be induced either from the front or rear side of the glass sample. Ablation rates
of over 100 μm per pulse can be achieved in rear side processing. In comparison, picosecond laser processing of glass
and quartz (at a wavelength of 1064 or 532 nm) yield smaller feed rates at however much better surface and bore wall
quality. This is of great importance for small sized features, e.g. through-hole diameters smaller 50 μm in thin glass.
Critical for applications with minimum micro cracks and maximum performance is an appropriate distribution of laser
pulses over the work piece along with optimum laser parameters. Laser machining tasks are long aspect micro drilling,
slanted through holes, internal contour cuts, micro pockets and more complex geometries in e.g. soda-lime glass, B33,
B270, D236T, AF45 and BK7 glass, quartz, and Zerodur.
New strategies in laser micro processing of glasses and other optically transparent materials are being developed with increasing interest and intensity using diode pumped solid state laser (DPSSL) systems generating short or ultra-short pulses in the optical spectra at good beam quality. Utilizing non-linear absorption channels, it can be demonstrated that ns green (532 nm) laser light can scribe, dice, full body cut and drill (flat) borofloat and borosilicate glasses at good quality. Outside of the correct choice in laser parameters, an intelligent laser beam management plays an important role in successful micro processing of glass. This application characterizes a very interesting alternative where standard methods demonstrate severe limitations such as diamond dicing, CO2 laser treatment or water jet cutting, especially for certain type of optical materials and/or geometric conditions. Application near processing examples using different DPSSL systems generating ns pulsed light at 532 nm in TEM00 at average powers up to 10 W are presented and discussed in respect to potential applications in display technology, micro electronics and optics.
Ultra-short lasers at elevated peek powers combined with fairly moderate single pulse energies are able to induce very interesting non-linear optical interaction channels, such as multi-photon absorption, self-phase modulation and self focusing. These non-linear optical effects can be utilized to obtain surprising material reactions inside the bulk of optical dielectrics. With a certain degree of physical understanding and engineering experience, the material reaction can be controlled and optimized to generate e.g. internal markings, wave guides, 3d data storages or diffractive optical elements. As an example, laser-induced coloring of several type of glasses have been obtained at ultra-short bulk excitation, showing a strong resemblance to surface defects observed in most glasses after ionizing (e.g. X- and gamma-ray) hard radiation treatment. These laser-induced "color-centers" can alter the optical properties in dispersion and extinction locally in a well-defined volume, which can be described as a local change in the complex refractory index (n+ik). The implementation of this new technology can be characterized as "nik-engineering". New experimental results on laser-induced sub-surface modifications utilizing near infrared femtosecond and picosecond laser pulses inside different types of transparent dielectrics are presented and discussed in respect to the potential of "nik-engineering".
A new field in laser processing is opened by a laser-induced modification of the optical properties, i.e. the refractive index, absorption- and scattering-coefficient, inside transparent materials, preferentially optical glasses. Ultra short laser pulses are capable of inducing these modifications without cracking or even melting the glass matrix. The femtosecond and in some cases even picosecond laser technology allows to control and modify the optical properties in the bulk on a sub-µm scale. This is referred to as nik-engineering
TM, relating the experimental technique to changes of
the complex refractive index (n + ik). Three dimensional patterns of the (n + ik) modifications can be achieved in the subsurface region on a microscopic scale. The technical potential for optical applications is challenging and on the verge to be exploited. New results on nik-engineering using ultra-short laser pulses at a wavelength of 800 nm was investigated for special glasses with semi-conductive nano-particles, i.e. photo-chromic and GG/RG filter glasses. This paper discusses the laser-induced optical modification inside these glasses for different laser fluence and shot numbers,
addressing also the possible technological relevance of these effects in respect to decorative work, micro-tagging, and other functional structures.
To meet the industry's demand for reducing machine cycle lengths concerning laser-drilling a laser was developed at the LMTB-laboratories that emits high-power peak-pulses at excellent beam-quality. In co-operation with Technical University of Berlin (TU Berlin) a Nd:YAG Master-Oscillator Power-Amplifier (MOPA) laser system is undergoing permanent enhancements aiming at shorter pulse duration, higher fluence and improved long-term stability. Presently, the output power of the oscillator (10W@1064nm) with a beam-quality of M2=1.3 is amplified to more than 100W@1064nm with M2=2.3 and a single pulse energy up to 800 mJ. The pulse duration can be varied between 31 and 230ns. On account of the excellent beam quality, frequency conversion was carried out down to 266nm. The MOPA-System was used for laser micro scribing and drilling experiments into metals and ceramics where the influence of the beam quality on the geometrical shape of the hole is investigated and compared with applications conducted with similar laser systems. Additionally means in optimizing the drilling process such as burr-minimizing and melt-reduction were introduced. Furthermore, experiments using tapered drilling technique are undertaken. A maximum aspect ratio of 1:180 in sapphire was obtained. We achieved high ablation rates and precise structures in Al2O3 (ceramic and sapphire), AlN, ZrO2, Ni-base alloy, platinum, tungsten and many more materials. Further improvement of the system was undertaken by means of multimode fibers as phase conjugate mirrors (PCM) using the effect of stimulated brillouin scattering (SBS).
We report on the micro structuring of fused silica (a-SiO2) and calcium fluoride (CaF2) with a conventional KrF excimer laser (248 nm) by utilization of the effects in the laser-induced plasma-assisted ablation (LIPAA). Mask projection of the UV light is realized onto the rear (instead of the front) side of the UV transparent samples. The plasma generated from a metal target located behind the rear surface of the VUV window effectively assists in the ablation. In the case of fused silica, we obtain high-quality complex micro structures with structure depths even above 500 μm in aspect ratios of 1:5 and better. The ablation rate in fused silica can reach a level as high as 1 μm per pulse with this novel method, demonstrating a remarkable efficiency. While the ablation rate observed for CaF2 remains at 50 nm per pulse, the up to 100 μm deep micro structures demonstrate an excellent quality without signs of severe cracking or stress outside the mask projected area. This technique permits high-quality micro fabrication of bio-medical, electronic and opto-electronic devices based on oxides and fluorides by use of a conventional UV laser.
A new field in laser processing is opened by the method of modifying the optical properties, i.e. the refractive index, absorption- and scattering-coefficient, at minimal mechanical stress inside the material. Focusing ultra short laser pulses inside the transparent media allows to control and modify their optical properties. This is referred to as nik-engineering (TM), relating the technique to changes of the complex refractive index, i.e. (n+ik). Three dimensional patterns of the (n + ik) modifications can be achieved in the subsurface region even on a microscopic scale. New results in nik-engineering obtained in our application laboratory are presented using different optical materials. The results in laser nik-engineering of photo-chromic glass using ultra short laser pulses at a wavelength of 800 nm is presented. A model in respect to the relevant processes leading to the observed laser-induced modifications in the optical properties of photo-chromic glass is presented. We discuss the results and the commercial potential of nik-engineering.
To meet the industry's demand for reducing machine cycle lengths concerning laser-drilling a Nd:YAG Master-Oscillator Power-Amplifier (MOPA)-system was developed at the LMTB-laboratories that emits high-power peak-pulses at excellent beam-quality. Presently, the output power of the oscillator (10W@1064nm) with a beam-quality of M2 = 1.3 is amplified to 95W@1064 nm with M2=2.3 and a single pulse energy up to 500 mJ. The pulse duration can be varied between 26 and 230 ns. On account of the excellent beam quality, frequency conversion resulted in 49W@532nm and 4.8@266nm. The MOPA-System is used for laser micro drilling experiments into metals and ceramics where the influence of the beam quality on the geometrical shape of the hole is investigated and compared with applications conducted with similar laser systems. Additionally means in optimizing the drilling process such as burr-minimizing and melt-reduction were introduced. Furthermore, experiments using tapered drilling technique are undertaken. A maximum aspect ratio of 1:200 in stainless steel was obtained.
The high peak powers of ultra short (ps and sub-ps) pulsed lasers available at relatively low single pulse energies potentially allow for a precise localization of photon energy, either on the surface or inside (transparent) materials. Three dimensional micro structuring of bulk transparent media without any sign of mechanical cracking has shown the potential of ultra short laser processing. In this study, the micro structuring of bulk transparent media was used to modify fused silica and especially the cladding-core interface in normal fused silica wave guides. The idea behind this technique is to enforce a local mismatch for total reflection at the interface at minimal mechanic stress to overcome the barrier for enhanced optical out-coupling. The laser-induced modifications were studied in dependence of pulse width, focal alignment, single pulse energy and pulse overlap. Micro traces with a thickness between 3 and 8 μm were generated with a spacing of 10 μm in the subsurface region using sub-ps and ps laser pulses at a wavelength of 800 nm. The optical leakage enforced by a micro spiral pattern is significant and can be utilized for medical applications or potentially also for telecommunications and fiber laser technology.
To meet the industry's demand for reducing machine cycle lengths concerning laser-drilling a Nd:YAG Master-Oscillator Power-Amplifier (MOPA)-system was developed at the LMTB-laboratories that emits high-power peak-pulses at excellent beam-quality. Presently, the output power of the oscillator (10W@1064nm) with a beam-quality of M2=1.3 is amplified to 95W@1064nm with M2=2.3 and a single pulse energy up to 500mJ. The pulse duration can be varied between 26 and 230ns. On account of the excellent beam quality, frequency conversion resulted in 49W@532nm and 4.8@266nm. The MOPA-System is used for laser micro drilling experiments into metals and ceramics where the influence of the beam quality on the geometrical shape of the hole is investigated and compared with applications conducted with similar laser systems. Additionally means in optimizing the drilling process such as burr-minimizing and melt-reduction were introduced. Furthermore, experiments using tapered drilling technique are undertaken. A maximum aspect ratio of 1:200 in stainless steel was obtained.
A new field in laser processing is opened by this method of modifying the optical properties, i.e. the refractive index, absorption- and scattering-coefficient, inside the material. Focusing ultra short laser pulses inside the transparent media allows to control and modify their optical properties. This is referred to as nik-engineering, relating the experimental technique to changes of the complex refractive index (n + ik). Three dimensional patterns of the (n + ik) modifications can be achieved in the subsurface region even on a microscopic scale. New results in nik-engineering obtained in our application laboratory are presented using different optical materials. The results in laser nik-engineering of photo-chromic glass using ultra short laser pulses at a wavelength of 800 nm are presented to the best of our knowledge for the first time. We discuss the results and the possibilities of nik-engineering and consider the technological relevance with respect to decorative work, micro-tagging, and other functional structures.
High beam quality is one of the most important properties for micro material processing with lasers. It facilitates slight focus diameters and due to high Raleigh length even at strong focusing drilling of holes with high aspect ratio. Together with high average output powers it allows fast processes with high quality. Another important point is the wavelength of the laser radiation. Many materials e.g. diamond or silicon show no sufficient absorption at fundamental wavelength of Nd based solid-state laser sources. Frequency conversation to the second and fourth harmonic allows the efficient processing of these materials. At least flexible pulse peak power and repetition rate is necessary to optimize the process. Three laser systems which fulfill these requirements are investigated. A pulsed pumped Nd:YAG System which delivers an average output power of 315 W with M2 = 2.6 at the fudamental wavelength and 124 W at the second harmonic. Another pulsed pumped System based on Nd:YAG with an average output power up to 125 W with M2 = 2.2 at the fundamental wavelength, 49.5 W at the second harmonic and 4.75 W at 266 nm. Due to its active Q-switch the pulse peak power of this system is variable in a wide range. Furthermore, a continuously pumped amplifier arrangement with nearly diffraction limited output of 120 W average power has been achieved at 10 kHz repetition rate.
Ceramic and crystalline wafer substrates are widely used in microelectronics. The individual choice is based on their thermal, optical and mechanical properties. For a variety of applications high quality laser micro processing of these materials, i.e. the generation of blind and through holes, grooves and even complex three dimensional micro structures, is gaining in importance. The department of applied laser technologies of the LMTB GmbH has conducted extensive studies on the versatility of q-switch Nd:YAG laser systems for the micro structuring of ceramic and crystalline wafer substrates that differ strongly in their optical and mechanical properties, such as Al2O3, AlN, sapphire, Si and SiC. This paper discusses the laser material micro machining results in respect to the laser parameters used to optimize the micro processing quality and speed for the different materials.
The availability of ultra short (ps and sub-ps) pulsed lasers has stimulated a growing interest in exploiting the enhanced flexibility of femtosecond and/or picosecond laser technology for micro-machining. The high peak powers available at relatively low single pulse energies potentially allow for a precise localization of photon energy, either on the surface or inside (transparent) materials. Three dimensional micro structuring of bulk transparent media without any sign of mechanical cracking has been demonstrated. In this study, the potential of ultra short laser processing was used to modify the cladding-core interface in normal fused silica wave guides. The idea behind this technique is to enforce a local mismatch for total reflection at the interface at minimal mechanic stress. The laser-induced modifications were studied in dependence of pulse width, focal alignment, single pulse energy and pulse overlap. Micro traces with a thickness between 3 and 8 μm were generated with a spacing of 10 μm in the sub-surface region using sub-ps and ps laser pulses at a wavelength of 800 nm. The optical leakage enforced by a micro spiral pattern is significant and can be utilized for medical applications or potentially also for telecommunications and fiber laser technology.
Time resolved studies using femtosecond laser pulses at 800 nm illuminate the distinctions in the dynamics of ultrafast processing of dielectrics compared to semi-conductors and metals. Dielectric materials are strongly charged at the surface on the sub-ps time scale and undergo an impulsive Coulomb explosion prior to thermal ablation. Provided the laser pulse width remains in the ps or sub-ps time domain this effect can be exploited for processing. Otherwise, the high localization of energy accompanied by ultrafast laser micro structuring is of great advantage also for high quality processing of thin metallic or semi-conductive layers, where the surface charge is effectively quenched.
This paper discusses possible potentials of ultra short laser pules in the pulse width range < 10 picosecond from the perspective of laser micro processing. With the problems involved generating ultra short laser pluses at high average power it will be shown, that the most successful applications performed with ultra short pulse technology is associated with problems, where the precise energy localization plays a crucial role. The discussion is based on laser processing examples from the application laboratory at the LMTB GmbH comparing applications using q-switch Nd:YAG lasers with nanosecond pulse widths and mode-locked, amplified Ti:sapphire lasers.
We performed ablation studies on multi-layer systems at different wavelength - pulse duration combinations. The multi-layer systems of interest, 150 nm thin indium tin oxide (ITO), 200 thin polyaniline (PANI) on 1 micrometers thick photo resist, and 280 nm PPV/pedot layer-combination on 150 nm thin ITO are optically transparent and used for a variety of industrial applications. One important goal of the study was to determine the possible process window for a complete removal of only the top layer, leaving the remaining layer basically unharmed. The investigations were conducted with the following wavelength - pulse duration combinations: 800 nm and 180 fs, 800 nm and 5 ps, 266 nm and 150 fs, 266 nm and 5 ns, 532 nm and 5 ns. We generated micro dots, lines and areas to determine the damage threshold, the processing quality and the processing speed for the specified application of selective layer removal. The structures were analyzed by means of optical and atomic force microscopy. In some cases, we observed a strong pulse duration dependence in the ablation threshold, an indication for the observed difficulties using laser pulse in the ns range. Comparative studies at different wavelengths demonstrate that laser pulses in the UV are not necessarily always a first choice to achieve a precise removal of the optically transparent top layer.
We performed surface and bulk processing experiments on different transparent materials with ultra short laser pulses. The investigations were performed mainly at 800 nm and at pulse widths ranging from 0.2 to 5 ps. We focused our attention on fluence and shot number dependencies to analyze possible incubation effects in the different materials and determine the damage threshold. In the multi- shot experiments we determined strong incubation effects which we attribute to laser-induced defect formation and accumulation. Inside the bulk we were able to generate dots and lines even in sub-micrometers sizes. The structures were analyzed by means of optical microscopy. Laser pulses at a pulse width above ca. 1 ps demonstrate strong self focusing which can be utilized for bulk and rear surface micro structuring. Below a certain pulse width other effects counteract self focusing and beam diffraction and fillamentation seem to dominate. Depending on focusing optics we observe strong differences in the possibility to process the bulk of transparent materials with fs laser pulses which we attribute to the effects in Kerr non- linearity. Also, the consequences of incubation effects on the structuring inside the bulk seem to depend strongly on the pulse width. We discuss the results based on possible technological relevance and the ablation mechanism involved.
Dielectric materials exposed to ultrashort laser radiation have evidenced individualized paths to deposit the energy into the lattice. Electronic and thermal mechanisms competing in the process of material removal depend on the efficiency of the electrostatic energy accumulation on the surface due to photoionization, as well as on the lattice heating which follows the electron-phonon coupling. The electrostatic surface break-up is a fast, sub-picosecond process, while thermal mechanisms start to dominate on a longer, picosecond time scale given by the electron-lattice equilibration and phase transformation time. The Coulomb- explosion induced ion ejection due to surplus charge accumulated on the surface during the photoionization process is significant only in dielectrics while in semiconductors and metals an efficient neutralization occurs. The significance of the different channels in dielectric materials can be reduced or enhanced by using laser pulses which are modulated on a time scale characteristic for the above mentioned mechanisms. Thus, amplified temporally-shaped pulses, double peaks, or pulse trains with a separation below 1 ps can have a significant effect on the quality of micromachining of transparent materials. The energy deposition can be modulated in such a way that the first pulse of properly chosen energy leads to a softening of the material associated with the onset of heating, thus changing the coupling conditions for the next pulses. This leads to less residual stress accumulation, cleaner structures, and opens the way for a material dependent optimization process.
Ultrashort pulsed laser ablation of dielectrics has been investigated using ex-situ morphological examinations in combination with in-situ time-of-flight mass spectrometry of the ablated species. Analysis of the energy spectrum of the ablation products provides a wealth of information on the processes occurring during femtosecond laser ablation of materials. The presentation will focus on the case of sapphire (Al2O3) and discuss the fundamental processes in ultrashort pulsed laser sputtering. Two different ablation phases have been identified, a gentle phase with low ablation rates and a strong etch phase with higher ablation rates, but with limitation in structure quality. A comparison of the energy and momentum distributions of ejected ions, neutrals and electrons allows one to distinguish between non-thermal and thermal processes that lead to the macroscopic material removal. Fast positive ions with equal momenta are resulting from Coulomb explosion of the upper layers at low fluence and low number of irradiating laser pulses (gentle etch phase). Pump-probe studies with fs laser pulses reveal the dynamics of excitation and electron mediated energy transfer to the lattice. At higher laser fluences or after longer incubation, evidence for phase explosion can be derived from both the morphology of the surface and the results of the in-situ experiments.
Ultrashort laser pulses provide high power at low energy which is very promising to obtain precise microstructures inside and on the rear side of the transparent materials. Decreasing the pulse duration from several ps into the sub-ps range, we noticed strong differences in the processing and non-linear behavior. We performed experimental investigations on laser beam propagation through wide-band gap materials at high peak powers. We present recent results on different types of bulk modifications generated inside several different transparent materials and focus our attention on pulse duration dependent observations in a range between 0.2 and 4 ps.
We present the results of our investigations on the surface damage/ablation threshold and processing morphology for sapphire after single and multiple laser pulse irradiation at 800 nm in the picosecond and sub-picosecond duration range. The threshold for ablation drops sharply for multiple laser shot irradiation, due to material dependent incubation effects. We observe two distinctively etch phases: `gentle' and `strong'. Monitoring the mechanism and dynamics of the ion expulsion using combination of time-of-flight mass spectroscopy and femtosecond pump-probe technique, we identified Coulomb explosion as the dominant mechanism for ion emission in the `gentle' etch phase on a time scale of 1 ps. The momenta of the emitted ions are equal under these conditions. After sufficient incubation the damage threshold decreases and the ablation is shifted towards the `strong' phase. The velocity distributions shift to lower values, evidence for `phase explosion' is seen and the ions tend here to equal kinetic energies.
Ultrashort laser pulses have considerable potential for micron and sub-micron structuring of several materials. The lower energy impact, the reduction of thermal damage, the elimination of laser-plume interaction, and the exploitation of nonlinear optical effects all contribute to a strong improvement when compared to results using pulse widths in the nanosecond range. Depending on the choice of fluence compared to the damage threshold, with ultra-short laser pulses one is able to generate different types of structures, minimizing the heat affected zone. The damage threshold drops dramatically during the first laser shots, due to defect incubation. This has important consequences for applications, such as laser machining and for the lifetime of optical components. At a fluence below surface damage threshold we were also able to generate bulk modifications of different size and location in a controllable fashion by variation of laser pulse width, energy and number of shots, utilizing the beam narrowing effects during self focusing. A study of the dependence of the structure depth on the square root of the laser power for a given pulse length provides a straightforward method for determining the non-linear index of refraction.
We have investigated the material processing of oxides and fluorides using ultrashort laser pulses and have demonstrated a strong improvement when compared to results using longer pulse widths in the nanosecond range. High laser fluences (well above the damage threshold) at 800 nm and 248 nm are used to generate channels with high aspect ratios. Careful beam alignment can eliminate any remaining stress-induced damage outside the channel. At intermediate fluences just above the front surface processing threshold we observe a low ablation rate. In this 'gentle etch' phase it is possible to generate well-defined, smooth pockets and periodic patterns or ripples. The ripples appear when the laser pulse width is shorter than the lifetime of the electrons excited into the conduction band. In the low fluence regime (below the surface damage threshold) the self-focusing of laser pulses in the ps and sub-ps range can be utilized to obtain microstructures inside and on the rear side of the transparent materials.
A compact design of a single-shot autocorrelator, including time-calibration, for the detection of low-repetition femtosecond laserpulses is presented. The conversion of the temporal duration of the laser pulse into a spatial distribution is obtained by noncollinear frequency doubling in a lithium-iodate crystal. The intensity distribution of the second harmonic signal is detected by a CCD-line-image sensor. The present crystal limits the resolution from 100 fs to 20 ps.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.