Electrically-driven single-photon sources (SPSs) are required for the scalable quantum technologies. Color centers in diamond emerged as attractive candidates for room-temperature SPSs. SiV centers are especially attractive due to their outstanding emission properties. However, although electroluminescence from SiV centers has been demonstrated, the single-photon electroluminescence (SPEL) from a single center has not been achieved due to the low SPEL rate. Here, we explain why the SPEL rate in recent experiments was low to be resolved and design a diamond p-i-n diode with a SiV center and show how to achieve an SPEL rate of more than 900000 photons/s.
Emerging quantum information technologies require a source that emits single photons at predetermined times under electrical pumping. Color centers in diamond attract considerable attention as a room-temperature single-photon source. However, their electroluminescence has been shown only in steady-state and not on-demand. Here, we show how to control the single-photon electroluminescence (SPEL) of SiV centers in a proposed diamond diode and switch SiV center SPEL rate from 2 cps to 1 Mcps and vice versa in less than 3 ns. Our findings bring closer on-demand electrically-driven single-photon sources operating at room temperature.
Implementation of optical components in microprocessors can increase their performance by orders of magnitude. However, the size of optical elements is fundamentally limited by diffraction, while miniaturization is one of the essential concepts in the development of high-speed and energy-efficient electronic chips. Surface plasmon polaritons (SPPs) are widely considered to be promising candidates for the next generation of chip-scale technology thanks to the ability to break down the fundamental diffraction limit and manipulate optical signals at the truly nometer scale. In the past years, a variety of deep-subwavelength plasmonic structures have been proposed and investigated, including dielectric-loaded SPP waveguides, V-groove waveguides, hybrid plasmonic waveguides and metal nanowires. At the same time, for practical application, such waveguide structures must be integrated on a silicon chip and be fabricated using CMOS fabrication process. However, to date, acceptable characteristics have been demonstrated only with noble metals (gold and silver), which are not compatible with industry-standard manufacturing technologies. On the other hand, alternative materials introduce enormous propagation losses due absorption in the metal. This prevents plasmonic components from implementation in on-chip nanophotonic circuits.
In this work, we experimentally demonstrate for the first time that copper plasmonic waveguides fabricated in a CMOS compatible process can outperform gold waveguides showing the same level of mode confinement and lower propagation losses. At telecommunication wavelengths, the fabricated ultralow-loss deep-subwavelength hybrid plasmonic waveguides ensure a relatively long propagation length of more than 50 um along with strong mode confinement with the mode size down to lambda^2/70, which is confirmed by direct scanning near-field optical microscopy (SNOM) measurements. These results create the backbone for design and development of high-density nanophotonic circuits and their integration with electronic logic on a silicon chip.
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