Plasma based radiation sources optimized to emit 13.5 nm Extreme UV radiation also produce a significant amount of
light at longer wavelengths. This so called out-of-band (OoB) radiation is detrimental for the imaging capabilities of an
EUV lithographic imaging system, particularly the ultraviolet (UV) parts of the light (λ=100-400 nm).
To suppress these wavelengths while maintaining the high efficiency of the mirror for EUV light, several methods
have been developed, including phase-shift gratings (PsG) and anti-reflection layers (SPE layer). Both methods have
achieved a suppression factor of 10 - 30 around the target wavelength. To achieve a full band suppression effect with a
minimum loss of EUV light, a new scheme based on surface pyramid structures was developed. An average suppression
of more than 10 times was achieved with a relative EUV efficiency of 82.2% by using the Si pyramids structure
(compared to a flat multilayer (ML)). Recently, we have successfully produced a pyramid structure consisting of
multilayers which greatly improves the relative EUV efficiency to 94.2%.
We developed and fabricated a single layer antireflection coating for the molybdenum/silicon multilayer mirrors.The 20 nm thin film of Si0.52C0.16N0.29, deposited by simultaneous electron beam evaporation and nitrogen ion implantation, causes a broadband suppression of the DUV reflectance with a maximum suppression at λ= 285 nm from 58% to 0.3%, corresponding to a factor of 195.
In this article we present an overview of the optimization of LaN/B multilayers that enabled
the deposition of a multilayer with a normal incidence reflectance of 57.3 % at 6.6 nm wavelength, the
highest value reported to date. Two different ways of nitridation of the La layers were investigated:
firstly N-ion post treatment of the La layer and secondly reactive magnetron sputtering of La in N2
atmosphere. Initially the optimization of the multilayers was performed for 50 period test multilayers,
followed by the selection of the best process to study the stability of the full stack deposition and the
optical performance of the mirrors. The scaling of reflectivity with increasing number of periods for
LaN/B multilayer mirrors will also be discussed.
Plasma based radiation sources optimized to emit 13.5 nm Extreme UV radiation also produce a significant amount of light at longer wavelengths. This so called out-of-band (OoB) radiation is detrimental for the imaging capabilities of an EUV lithographic imaging system, particularly the deep ultraviolet (DUV) and ultraviolet (UV) parts of the light (λ=100-400 nm). To suppress these wavelengths while maintaining the high efficiency of the mirror for EUV light, several methods have been developed, including phase-shift gratings (PsG) and anti-reflection layers (SPE layer). PsG’s use the diffraction properties of a quarter-wavelength high multilayer grating to filter out the DUV/UV light, while the SPE layer works as an anti-reflection coating. Both methods have achieved a suppression factor of 10 - 30 around the target wavelength. To achieve a full band suppression effect, a new scheme based on surface pyramid structures was developed. An average suppression ofmore than 10 times can be achieved with a relative EUV efficiency of 89% (compared to standard multilayer (ML)) in theory. Different methods were discussed and their results are presented.
The spectral properties of LaN/B and LaN/B4C multilayer mirrors have been investigated in the 6.5 to 6.9 nm wavelength range, based on measured B and B4C optical constants. We show that the wavelength of optimal reflectance for boron-based optics is between 6.63 and 6.65 nm, depending on the boron chemical state. The wavelength of the maximum reflectance of the LaN/B4C multilayer system is confirmed experimentally. Calculations of the wavelength-integrated reflectance for perfect ten-multilayer-mirror stacks show that a B-based optical column can be optimized for a wavelength larger than 6.65 nm.
The spectral properties of LaN/B and LaN/B4C multilayer mirrors have been investigated in the 6.5-6.9 nm wavelength
range, based on measured B and B4C optical constants. We show that the wavelength of optimal single mirror reflectance
for boron based optics is between 6.63 and 6.65 nm, depending on the boron chemical state. The wavelength of the
maximum reflectance of the LaN/B4C multilayer system is confirmed experimentally. Calculations of the wavelengthintegrated
reflectance for ideal 10-multilayer-mirror stacks show that a B-based optical column can be optimized for a
wavelength larger than 6.65 nm.
Reported is a summary of multilayer deposition results by FOM on three elements of the projection optics of the ASML
Extreme UV Lithography HVM tools. The coating process used is e-beam evaporation in combination with low-energy
ion-beam smoothening. The reflectance of the coatings, which are covered with a special protective capping layer, is
typically around 68%, with a maximum value of 69.6% and a non-correctable figure error added by the full multilayer
stack of better than 35 picometer. The results are compared to the earlier coatings of the EUVL Process Development
Tool.
We present a computational and experimental study on interface passivation of B4C/La multilayers for
photolithography at wavelengths beyond 13.5 nm. We successfully applied N-plasma treatment to form
interface-localized BN and LaN layers, preventing LaB6 and LaC2 interlayer formation and increasing the optical
contrast. Experiments suggest an improvement of absolute reflection by up to 20% for 200 period multilayers,
with a best-so-far result of 41.5 % at near-normal incidence of 6.7 nm.
In this work we present the smoothing properties of our ion beam smoothened multilayers and, based on the same
technology, the extreme smoothing properties in the high and near mid spatial frequency range of a single-material
smoothing layer. Coating results of high reflectance multilayers both on rough substrates and on substrates smoothened
with silicon bufferlayers are discussed.
A new deposition technique that builds on the thermal particle characteristics typical for e-beam deposition is described.
This technique applies magnetron sputtering in a special scheme where these characteristics of the e-beam deposition
method are achieved. The method was used for interface engineering of Mo/Si multilayers, with different barrier layer
materials being tested. Composition of the barrier layers formed was studied using XPS. Results are shown on the
general example of a Mo/B4C/Si/B4C system. The ultra-thin reflectance enhancement B4C barriers can be deposited with
low added stress, resulting in a multilayer stress as low as about -150 MPa. The best interface engineered multilayers
reflect 70.5% at 13.3 nm and 70.15% at 13.5 nm. These results were achieved with 50 period multilayers terminated with
a standard Si layer.
CZ SMT AG produced large off-axis EUV mirrors as they are used e.g. in ASML's alpha demo tools, the predecessor for Extreme Ultraviolet Lithography (EUVL) production tools by ASML. The coating development and a large part of the actual coatings were done by the FOM-Institute. The Physikalisch-Technische Bundesanstalt (PTB) operates an EUV reflectometry facility at the electron storage ring BESSY II for at-wavelength metrology of full-size EUVL optics with a weight of up to 50 kg and a diameter of 550 mm. Critical issues for EUVL mirrors are the high reflectivity close to the theoretical limit, the matching of the period to the operating wavelength of the stepper (13.5 nm) and the imaging properties of the EUV optics. The full multilayer stack needs to be controlled laterally to such extend that the initial sub-nanometre surface figure of the substrate is preserved. The so-called added figure error should not exceed 100 pm in order to ensure faultless imaging at 13.5 nm wavelength. Here, we discuss representative results obtained at large off-axis EUV mirrors. We especially discuss the challenges of measurements at higher local angles of incidence according to the optical design and the accuracy needed in sample alignment for measurement of the coating profiles. PTB has shown excellent reproducibility for measurements of the near normal incidence reflectance of flat homogeneous mirrors over several years. For large off-axis EUV mirrors, measurements have to be done at angles significantly off normal, which dramatically increases the influence of angular alignment errors of the sample on the measured peak wavelength. Furthermore, according to the optical design, these optics have gradients of the coating thickness which require exact knowledge of the measurement position in the mirror coordinates. Extensive studies were done to estimate and validate the uncertainties connected to the sample alignment. Our results clearly show that it is possible to meet and verify the tight specifications for the lateral coating profiles of EUV multilayer mirrors. The non-correctable added figure error is significantly better than required and the overall reflectance of the coatings with a special protective capping layer is 65%.
E. Louis, A. Yakshin, E. Zoethout, R. van de Kruijs, I. Nedelcu, S. van der Westen, T. Tsarfati, F. Bijkerk, H. Enkisch, S. Müllender, B. Wolschrijn, B. Mertens
Reported is a summary of the development of EUV Mo/Si multilayer coating technology. Though the results are developed for application in Extreme Ultraviolet Lithography, they are of a broader relevance including optics for astronomy. The coating process used consists of electron beam evaporation in combination with low energy ion beam smoothening. The radiation hardness of these coatings is discussed and methods to reduce the multilayer induced substrate stress. The reflectance of the coatings, which are covered with a special protective capping layer, is typically around 65%, while the non correctable figure error added by the full multilayer stack is controlled to better than 15 picometer.
Reported is a summary of the coating of three elements of the illuminator and three of the projection optics of the EUVL Process Development Tool. The coating process used is e-beam evaporation in combination with low energy ion beam smoothening. The reflectance of the coatings, which are covered with a special protective capping layer, is typically around 65% and the non correctable figure error that is added by the full multilayer stack is controlled to better than 15 picometer.
Reported is the production of multilayer EUV coatings on 25000 mm2 large mirror substrates using e-beam based deposition. The accuracy achieved over the full area and the full multilayer stack amounts to an added figure error of 0.02 nm, i.e. in the sub-atomic distance range, thus meeting the future requirements on EUV coating technology.
Although Mo/Si multilayers are now widely used in EUV lithography development programs, multilayer induced substrate stress continues to be a major issue. Standard stress values of -350 to -450 MPa, reported for Mo/Si systems produced by magnetron sputtering, induce an intolerable deformation of the surface figure of EUV optical components. Stress in e-beam deposited Mo/Si multilayers has not been reported before. At FOM Rijnhuizen, an extensive stress mitigation program has been carried out on multilayers produced by e-beam deposition and medium energy ion polishing. The stress in our standard, high reflectance Mo/Si multilayers is less than -200 MPa. Although e-beam deposition apparently halves the typical stress values obtained by sputter deposition, it is still above the allowable limit for the first lithographic system, the so-called Alpha Tool. To further reduce stress, the influence of the Mo fraction, the number of periods and the multilayer period or d-spacing has been investigated. Varying the Molybdenum fraction in e-beam deposited multilayers results in a similar dependency as reported for magnetron sputtered coatings, though at strongly reduced absolute values. Furthermore, variation of the d-spacing has a small influence on stress. The number of periods however, has no influence on the stress value in the range from 20 to 50 periods. Applying stress mitigation techniques based on adjustment of the Mo fraction, a high reflectance of above 69% at near normal incidence at 13.5 nm has been obtained for multilayers with a stress value of only -33 MPa. This has been achieved by using Mo and Si only. This stress value is sufficiently low to enable the first generations of EUVL optics.
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