β-Ga2O3 epitaxy from metal-organic chemical vapor deposition (MOCVD) has exhibited low background defects and high mobility which are promising for high-power devices. Vertical field-plate Schottky diodes have been fabricated using MOCVD β-Ga2O3 epitaxy that showed punch through breakdown with a specific on-resistance (Ron,sp) of 0.67 mΩ-cm2. This Ron,sp is among the lowest of comparable β-Ga2O3 drift layer thickness reports and can be contributed from the high-mobility MOCVD β-Ga2O3 epitaxy. We also demonstrated Pseudo vertical diodes fabricated on a thicker MOCVD β-Ga2O3 on Fe-doped substrate that showed higher voltage, better leakage current, and improved surface properties compared to the thinner films on Sn-doped substrate epitaxy.
Vertical β-Ga2O3 Schottky diodes from metal-organic chemical vapor deposition (MOCVD) epitaxy are reported for high-power devices. The field plate Schottky barrier diode (SBD) showed a differential specific on-resistance (Ron,sp) of 0.67 mΩ-cm2 and an average breakdown electric field of 2.28 MV/cm. To the best of our knowledge, this Ron,sp is the lowest among the available vertical β-Ga2O3 SBD reports, and contributed from the high-mobility MOCVD β-Ga2O3 epitaxy. Moreover, the average electric field of 2.28 MV/cm is higher compared to most of the vertical β-Ga2O3 punch-through SBDs. These results suggest that the high-quality MOCVD β-Ga2O3 can be promising for high-power devices.
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