Dr. Eun-Jin Kim Profile

Dr. Eun-Jin Kim

at Samsung Electro-Mechanics

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Author

Publications (13)

Proceedings Article | 1 April 2013 Paper

Heat behavior of extreme-ultraviolet pellicle including mesh support

In-Seon Kim, Eun-Jin Kim, Ji-Won Kim, Hye-Keun Oh

Proceedings Volume 8679, 86792X (2013) https://doi.org/10.1117/12.2012288

KEYWORDS: Pellicles, Silicon, Extreme ultraviolet, Nickel, Zirconium, Extreme ultraviolet lithography, Lithography, Temperature metrology, High volume manufacturing, Photomasks

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Proceedings Article | 23 March 2012 Paper

Effect of extreme-ultraviolet pellicle support to patterned mask

Ki-ho Ko, Eun-Jin Kim, Ji-Won Kim, Jun-Taek Park, Chang-Moon Lim, Hye-keun Oh

Proceedings Volume 8322, 832230 (2012) https://doi.org/10.1117/12.918019

KEYWORDS: Pellicles, Extreme ultraviolet, Photomasks, Extreme ultraviolet lithography, Thin films, Silicon, Computer simulations, Lithography, Distortion, Data modeling

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Proceedings Article | 23 March 2012 Paper

Is extreme ultraviolet pellicle possible? - in terms of heat absorption

In-Seon Kim, Hyung-Cheol Lee, Eun-Jin Kim, Ji-Won Kim, Hye-Keun Oh

Proceedings Volume 8322, 83222X (2012) https://doi.org/10.1117/12.916377

KEYWORDS: Pellicles, Extreme ultraviolet lithography, Extreme ultraviolet, Absorption, Thermal modeling, Thin films, Photomasks, Lithography, Silicon, Contamination

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Proceedings Article | 23 March 2010 Paper

Influence of mask surface roughness on 22nm node extreme ultraviolet lithography

Eun-Jin Kim, Jee-Hye You, Seoung-Sue Kim, Han-Ku Cho, Jinho Ahn, Ilsin An, Hye-Keun Oh

Proceedings Volume 7636, 76362K (2010) https://doi.org/10.1117/12.846895

KEYWORDS: Surface roughness, Extreme ultraviolet lithography, Reflectivity, Photomasks, Carbon, Extreme ultraviolet, Ruthenium, Image processing, Contamination, Optical lithography

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Proceedings Article | 14 December 2009 Paper

Evaluation of 172-nm wavelength as a possible candidate for 22-nm and below

Jee-Hye You, Eun-Jin Kim, Hye-Keun Oh

Proceedings Volume 7520, 75202U (2009) https://doi.org/10.1117/12.837231

KEYWORDS: Lithography, Refractive index, Immersion lithography, Double patterning technology, Extreme ultraviolet lithography, Photomasks, Absorbance, Liquids, Lithographic illumination, Extreme ultraviolet

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Proceedings Article | 18 March 2009 Paper

Incident angle change caused by different off-axis illumination in extreme ultraviolet lithography

Eun-Jin Kim, Jee-Hye You, Seong-Sue Kim, Han-Ku Cho, Ilsin An, Hye-Keun Oh

Proceedings Volume 7271, 727143 (2009) https://doi.org/10.1117/12.814031

KEYWORDS: Lithographic illumination, Photomasks, Extreme ultraviolet lithography, Critical dimension metrology, Extreme ultraviolet, Optical lithography, Lithography, Reflectivity, Coherence (optics), Resolution enhancement technologies

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Proceedings Article | 4 December 2008 Paper

Influences of various defects on extreme ultra-violet mask

Eun-Jin Kim, Jee-Hye You, Jung-Youl Lee, Deog-Bae Kim, Jae-Hyun Kim, Hye-Keun Oh

Proceedings Volume 7140, 71401N (2008) https://doi.org/10.1117/12.804570

KEYWORDS: Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Refractive index, Carbon, Ruthenium, Ultraviolet radiation, Lithography, Silicon, Molybdenum

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Proceedings Article | 25 March 2008 Paper

22 nm node contact hole formation in extreme ultra-violet lithography

Eun-Jin Kim, Kwan-Hyung Kim, Hyeong-Ryeol Park, Jun-Yeob Yeo, Jai-Soon Kim, Hye-Keun Oh

Proceedings Volume 6922, 69223X (2008) https://doi.org/10.1117/12.780242

KEYWORDS: Optical lithography, Extreme ultraviolet lithography, Photomasks, Lithography, Ultraviolet radiation, Image processing, Extreme ultraviolet, Refractive index, Silicon, Critical dimension metrology

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Proceedings Article | 21 March 2008 Paper

The study of attenuated PSM structure for extreme ultraviolet lithography with minimized mask shadowing effect

Chang Young Jeong, Byung Hun Kim, Tae Geun Kim, Sangsul Lee, Eun Jin Kim, Hye-Keun Oh, In-Sung Park, Jinho Ahn

Proceedings Volume 6921, 69213Q (2008) https://doi.org/10.1117/12.772533

KEYWORDS: Reflectivity, Photomasks, Critical dimension metrology, Binary data, Phase shifts, Extreme ultraviolet lithography, Molybdenum, Extreme ultraviolet, Deep ultraviolet, Image processing

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Proceedings Article | 21 March 2007 Paper

Characteristics and prevention of pattern collapse in EUV lithography

Wook Chang, Eun-Jin Kim, Young-Min Kang, Seung-Wook Park, Chang-Moon Lim, Ki-Tak Won, Jai-Soon Kim, Hye-Keun Oh

Proceedings Volume 6517, 65172S (2007) https://doi.org/10.1117/12.712469

KEYWORDS: Extreme ultraviolet, Deep ultraviolet, Extreme ultraviolet lithography, Lithography, Liquids, Semiconductors, Ultraviolet radiation, Adhesives, Optical lithography, Autoregressive models

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Proceedings Article | 23 March 2006 Paper

EUV lithography simulation for the 32nm node

Eun Jin Kim, Wook Chang, Jin Back Park, Sung Jin Kim, Jong Sun Kim, Hye-Keun Oh

Proceedings Volume 6151, 61510V (2006) https://doi.org/10.1117/12.656335

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Binary data, Extreme ultraviolet, Image processing, Chromium, Optical lithography, Germanium, Near field, Refractive index

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Extreme Ultraviolet Lithography (EUVL) is one of the patterning technologies proposed for the next generation lithography (NGL) which makes pattern less than 50 nm critical dimension (CD). And EUVL uses a very short exposure wavelength of 13.4 nm. So it has many characteristic in common with optical lithography, but EUVL are different from the conventional mask applied to the projection optical lithography. Specially, industry experts generally agree that the biggest challenges and risks for the next generation of lithography systems involve the mask. In EUVL, a mask is produced by applying multilayers of molybdenum and silicon to a flat substrate. The circuit pattern is produced by applying a final EUV-absorbing metal layer and then etching away the metal to form the image of the circuit. Also, the light shining with 6 degrees oblique to mask can not get target CD easily because the shadow effect is influenced on pattern. Therefore we must understand this kind of effect before doing real process. We tried to change the structure of the mask in order to decrease this effect and to have enough process latitude for the 32 nm node. EUV mask is affected by the thickness and kind of absorber and buffer material. First, we changed the absorber material such as Cr, TaN and Ge etc. without changing the buffer material. Second, we changed the thickness of the absorber materials. We tried to minimize the shadow effect by adjusting the side wall angle of the absorber layer parallel to the oblique incidence. Additionally we considered different shapes and depth of the etched multilayer binary mask and the refilled multilayer binary mask such as the inclined side wall of the etched multilayer. In this paper, we will describe the optimized EUV mask structure for 32 nm node by studying not only the aerial image, but also the resist profile. Solid-EUV simulator of Sigma-C is used to calculate the aerial image, resist pattern profile, and the process latitude with the optimized process parameters.

Proceedings Article | 15 March 2006 Paper

Optimization of chromeless phase mask by comparing scattering bars with zebra patterns

Hye-Young Kang, Ji-Eun Lee, Eun-A Kwak, Eun-Jin Kim, Seung-Wook Park, Sung-Hyuck Kim, Dong-Soo Shin, HeeJun Jeong, Hye-Keun Oh

Proceedings Volume 6154, 615429 (2006) https://doi.org/10.1117/12.656145

KEYWORDS: Photomasks, Scattering, Optical proximity correction, Electroluminescence, Resolution enhancement technologies, Phase shifts, Lithography, Chromium, Lithographic illumination, Binary data

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Resolution enhancement technology (RET) refer to techniques that extend the usable resolution of an imaging system without decreasing the wavelength of light or increasing the numerical aperture (NA) of the imaging tool. Off-axis illumination (OAI) and phase shift mask (PSM) are essentially accompanied with optical proximity correction (OPC) for most devices nowadays. In general, these three techniques do not work in isolation and the most aggressive mainstream lithography approaches use combinations of all RETs. In fact, OAI and PSM are essentially useless for typical chip-manufacturing applications unless accompanied by OPC. For low k₁ imaging, strong OAI such as Quasar or dipole illumination types is the best. We used dipole illumination in this study. By using strong OAI, the amplitude of the 0^th order is decreased and the amplitude of the 1^st order is increased. Chromeless phase lithography (CPL) is one of PSM technologies and CPL mask is the possible solution for small geometry with low mask error enhancement factor (MEEF). CPL uses only 180 degrees phase-shifter on transparent glass without chromium film to define light-shielding region, destructive interference between light transmitted through the 0 degree and 180 degrees regions produces dark images. To obtain the best resolution, proper OPC is required with CPL. While the most common and straightforward application of OPC is to simply move absorber edges on the mask by giving simple mask bias, the interesting and important additional technique is the use of scattering bars. Also, we can use zebra patterns for the transmission control. Mask intensity transmission changes can impact the image quality. Zebra patterns are formed by adding chromium transverse features. The transmission will be controlled by the zebra pattern density. Technology node with ArF source is studied and the mask optimization is found to be a critical. And the linewidth of scattering bars, transmission (using zebra feature) are varied at line and space (L/S) patterns. We used 65 nm node 5 L/S and 45 nm node isolated line pattern. In order to optimize the zebra pattern density, we need to control the line width and pitch of the zebra patterns. For dense line and isolated line, the use of scattering bars and zebra patterns affected target critical dimension. We found out the better process window at dense 65 nm node by comparing the use of scattering bars with zebra patterns. Likewise, we optimized the isolated 45 nm node.

Proceedings Article | 6 May 2005 Paper

Line width variation with absorber thickness in extreme ultraviolet lithography

Young-Doo Jeon, Min-Ki Choi, Eun-Jin Kim, Jong-Sun Kim, Hye-Keun Oh

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.600406

KEYWORDS: Extreme ultraviolet lithography, Photomasks, Germanium, Chromium, Reflectivity, Near field, Absorption, Extreme ultraviolet, Multilayers, Lithography

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