A mechanism of electric current-induced cooling of nanostructures is proposed and analyzed. The conditions are studied of electric current flow through a heterostructure with two quantum wells, with electrons from one quantum well passing into the other via phonon-assisted indirect tunneling. As a result, the system is cooled by the flowing current, with the temperature of the system depending on the current nonmonotonically. A universal law for the maximal cooling temperature is derived.
The effect of carrier-carrier relaxation on threshold and power-current characteristics of InAs and GaAs quantum well (QW) lasers is studied. Dependence of carrier relaxation time on temperature and carrier density is considered. It is shown that in this case the gain coefficient becomes a more pronounced function of temperature and carrier density, and threshold current density increases drastically.
A mechanism of electric current-induced cooling of heterosystems is proposed and analyzed. The conditions are studied of electric current flow through a heterostructure with two quantum wells, with electrons from one quantum well passing into the other via phonon-assisted indirect tunneling. As a result, the system is cooled by the flowing current, with the temperature of the system depending on the current nonmonotonically. A universal law for the maximal cooling temperature is derived.
The effect of carrier-carrier relaxation and carrier - phonon relaxation on threshold characteristics of quantum well (QW) lasers is studied. Carrier relaxation time considerably depends on temperature, carrier density, and quantum well width. It is shown that in this case the gain coefficient becomes a more pronounced function of temperature and carrier density.
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