Simulated RF time-domain characteristics for advanced Gunn diodes with hot electron injection and sub-micron transit
region lengths for use at frequencies over 100GHz are reported. The physical models used have been developed in
SILVACO and are compared to measured results. The devices measured were originally fabricated to investigate the
feasibility of GaAs Gunn diode oscillators capable of operating at D-band frequencies and ultimately intended for use in
high power (multi-mW) Terahertz sources (~0.6THz) when used in conjunction with novel Schottky diode frequency
multiplier technology. The device models created using SILVACO are described and the DC and time-domain results
presented. The simulations were used to determine the shortest transit region length capable of producing sustained
oscillation. The operation of resonant disk second harmonic Gunn diode oscillators is also discussed and accurate
electromagnetic models created using Ansoft High Frequency Structure Simulator presented. Novel methods for
combining small-signal frequency-domain electromagnetic simulations with time-domain device simulations in order to
account for the significant interactions between the diode and oscillator circuit are described.
An advanced step-graded Gunn diode is reported, which has been developed through joint modelling-experimental work.
The ~ 200 GHz fundamental frequency devices have been realized to test GaAs based Gunn oscillators at sub-millimetre
wave for use as a high power (multi mW) Terahertz source in conjunction with a mm-wave multiplier, with novel
Schottky diodes. The epitaxial growth of both the Gunn diode and Schottky diode wafers were performed using an
industrial scale Molecular Beam Epitaxy (V100+) reactor. The Gunn diodes were then manufactured and packaged by
e2v Technologies (UK) Plc. Physical models of the high power Gunn diode sources, presented here, are developed in
SILVACO.
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