Dr. Fan Zhang Profile

Dr. Fan Zhang

at Virginia Commonwealth Univ

SPIE Involvement:

Author

Publications (26)

Proceedings Article | 26 February 2016 Paper

Paper

Optical investigation of microscopic defect distribution in semi-polar (1-101 and 11-22) InGaN light-emitting diodes

Shopan Hafiz, Nicolas Andrade, Morteza Monavarian, Natalia Izyumskaya, Saikat Das, Fan Zhang, Vitaliy Avrutin, Hadis Morkoç, Ümit Özgür

Proceedings Volume 9748, 974828 (2016) https://doi.org/10.1117/12.2213908

KEYWORDS: Light emitting diodes, Near field optics, Near field scanning optical microscopy, Indium gallium nitride, Luminescence, Epitaxial lateral overgrowth, Nanostructures, Gallium nitride, Indium, Scanning electron microscopy, Quantum efficiency

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Proceedings Article | 13 March 2015 Paper

Paper

Active region dimensionality and quantum efficiencies of InGaN LEDs from temperature dependent photoluminescence transients

Nuri Can, Serdal Okur, Morteza Monavarian, Fan Zhang, Vitaliy Avrutin, Hadis Morkoç, Ali Teke, Ümit Özgür

Proceedings Volume 9363, 93632U (2015) https://doi.org/10.1117/12.2179637

KEYWORDS: Light emitting diodes, Quantum efficiency, Indium gallium nitride, Luminescence, Excitons, Quantum wells, Polarization, Internal quantum efficiency, External quantum efficiency, Temperature metrology

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Proceedings Article | 13 March 2015 Paper

Paper

Temperature-dependent time-resolved photoluminescence measurements of (1-101)-oriented semi-polar AlGaN/GaN MQWs

Daniel Rosales, Bernard Gil, Morteza Monavarian, Fan Zhang, Serdal Okur, Natalia Izyumskaya, Vitaliy Avrutin, Ümit Özgür, Hadis Morkoç

Proceedings Volume 9363, 93630J (2015) https://doi.org/10.1117/12.2076207

KEYWORDS: Lab on a chip, Luminescence, Excitons, Gallium nitride, Quantum wells, Polarization, Silicon, Picosecond phenomena, Oscillators, Anisotropy

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Proceedings Article | 13 March 2015 Paper

Paper

Strong carrier localization in stacking faults in semipolar (11-22) GaN

Serdal Okur, Morteza Monavarian, Saikat Das, Natalia Izyumskaya, Fan Zhang, Vitaliy Avrutin, Hadis Morkoç, Ümit Özgür

Proceedings Volume 9363, 93632N (2015) https://doi.org/10.1117/12.2080248

KEYWORDS: Gallium nitride, Excitons, Polarization, Point spread functions, Luminescence, Crystals, Temperature metrology, Applied physics, Quantum wells, Aluminum nitride

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Proceedings Article | 13 March 2015 Paper

Paper

Strong exciton-photon coupling in hybrid InGaN-based microcavities on GaN substrates

Serdal Okur, Alexander Franke, Fan Zhang, Vitaliy Avrutin, Hadis Morkoç, Frank Bertram, Juergen Christen, Ümit Özgür

Proceedings Volume 9363, 93632O (2015) https://doi.org/10.1117/12.2080265

KEYWORDS: Gallium nitride, Polaritons, Optical microcavities, Reflectivity, Excitons, Photons, Indium gallium nitride, Quantum wells, Luminescence, Temperature metrology

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Proceedings Article | 13 March 2015 Paper

Paper

Indium-incorporation efficiency in semipolar (11-22) oriented InGaN-based light emitting diodes

Morteza Monavarian, Sebastian Metzner, Natalia Izyumskaya, Serdal Okur, Fan Zhang, Nuri Can, Saikat Das, Vitaliy Avrutin, Ümit Özgür, Frank Bertram, Jürgen Christen, Hadis Morkoç

Proceedings Volume 9363, 93632P (2015) https://doi.org/10.1117/12.2080325

KEYWORDS: Indium, Gallium nitride, Light emitting diodes, Indium gallium nitride, Heterojunctions, Epitaxial lateral overgrowth, Metalorganic chemical vapor deposition, Quantum efficiency, Indium nitride, Chemical vapor deposition

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Proceedings Article | 13 March 2015 Paper

Paper

Enhancement of optical and structural quality of semipolar (11-22) GaN by introducing nanoporous SiNx interlayers

Morteza Monavarian, Sebastian Metzner, Natalia Izyumskaya, Marcus Müller, Serdal Okur, Fan Zhang, Nuri Can, Saikat Das, Vitaliy Avrutin, Ümit Özgür, Frank Bertram, Juergen Christen, Hadis Morkoç

Proceedings Volume 9363, 93632I (2015) https://doi.org/10.1117/12.2079180

KEYWORDS: Gallium nitride, Epitaxial lateral overgrowth, X-ray optics, Scanning electron microscopy, Luminescence, X-ray diffraction, X-rays, Excitons, Sapphire, Chemical vapor deposition

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Proceedings Article | 13 March 2015 Paper

Paper

Enhancement of coherent acoustic phonons in InGaN multiple quantum wells

Shopan Hafiz, Fan Zhang, Morteza Monavarian, Vitaliy Avrutin, Hadis Morkoç, Ümit Özgür

Proceedings Volume 9363, 93632J (2015) https://doi.org/10.1117/12.2079245

KEYWORDS: Phonons, Acoustics, Quantum wells, Indium gallium nitride, Terahertz radiation, Mirrors, Gallium nitride, Superlattices, Indium, Laser beam diagnostics

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Proceedings Article | 8 March 2014 Paper

Paper

Impact of extended defects on optical properties of (1-101)GaN grown on patterned Si

S. Okur, N. Izyumskaya, F. Zhang, V. Avrutin, S. Metzner, C. Karbaum, F. Bertram, J. Christen, H. Morkoç, Ü. Özgür

Proceedings Volume 8986, 89862B (2014) https://doi.org/10.1117/12.2040621

KEYWORDS: Gallium nitride, Near field optics, Light emitting diodes, Polarization, Silicon, Point spread functions, Near field scanning optical microscopy, Indium gallium nitride, Luminescence, Excitons

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Proceedings Article | 8 March 2014 Paper

Paper

Optical properties of m-plane GaN grown on patterned Si(112) substrates by MOCVD using a two-step approach

N. Izyumskaya, S. Okur, F. Zhang, M. Monavarian, V. Avrutin, Ü. Özgür, S. Metzner, C. Karbaum, F. Bertram, J. Christen, H. Morkoç

Proceedings Volume 8986, 898628 (2014) https://doi.org/10.1117/12.2037930

KEYWORDS: Gallium nitride, Near field optics, Metalorganic chemical vapor deposition, Silicon, Near field scanning optical microscopy, Scanning electron microscopy, Point spread functions, Image quality, Excitons, Chemical vapor deposition

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Proceedings Article | 8 March 2014 Paper

Paper

Determination of carrier diffusion length in p- and n-type GaN

Shopan Hafiz, Sebastian Metzner, Fan Zhang, Morteza Monavarian, Vitaliy Avrutin, Hadis Morkoç, Christopher Karbaum, Frank Bertram, Jürgen Christen, Bernard Gil, Ümit Özgür

Proceedings Volume 8986, 89862C (2014) https://doi.org/10.1117/12.2040645

KEYWORDS: Diffusion, Gallium nitride, Indium gallium nitride, Magnesium, Absorption, Luminescence, Line scan image sensors, Doping, Integration, Sapphire

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Proceedings Article | 8 March 2014 Paper

Paper

Polarized time-resolved photoluminescence measurements of m-plane AlGaN/GaN MQWs

Daniel Rosales, B. Gil, T. Bretagnon, F. Zhang, S. Okur, M. Monavarian, N. Izioumskaia, V. Avrutin, Ü. Özgür, H. Morkoç, J. Leach

Proceedings Volume 8986, 89860L (2014) https://doi.org/10.1117/12.2036984

KEYWORDS: Luminescence, Quantum wells, Polarization, Gallium nitride, Temperature metrology, Excitons, Anisotropy, Picosecond phenomena, 3D modeling, Tantalum

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Proceedings Article | 27 February 2014 Paper

Paper

Estimation of carrier leakage in InGaN light emitting diodes from photocurrent measurements

Shopan Hafiz, Fan Zhang, Morteza Monavarian, Serdal Okur, Vitaliy Avrutin, Hadis Morkoç, Ümit Özgür

Proceedings Volume 9003, 90031R (2014) https://doi.org/10.1117/12.2040926

KEYWORDS: Light emitting diodes, Indium gallium nitride, Electron transport, Band structure simulations, Heterojunctions, Continuous wave operation, Helium cadmium lasers, Metalorganic chemical vapor deposition, Plasma etching, Electrodes

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Proceedings Article | 27 March 2013 Paper

Paper

Microwave performance of AlGaN/AlN/GaN-based single and coupled channels HFETs

R. Ferreyra, X. Li, F. Zhang, C. Zhu, N. Izyumskaya, C. Kayis, V. Avrutin, Ü. Özgür, H. Morkoç

Proceedings Volume 8625, 86252B (2013) https://doi.org/10.1117/12.2005165

KEYWORDS: Phonons, Gallium nitride, Microwave radiation, Heterojunctions, Plasmons, Transistors, Aluminum, Aluminum nitride, Lithium, Reliability

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Proceedings Article | 4 March 2013 Paper

Paper

GaN-based vertical cavity lasers with semiconductor/dielectric and all dielectric reflectors

F. Zhang, S. Okur, S. Hafiz, V. Avrutin, Ü. Özgür, H. Morkoç

Proceedings Volume 8625, 86252F (2013) https://doi.org/10.1117/12.2005442

KEYWORDS: Dielectrics, Gallium nitride, Epitaxial lateral overgrowth, Reflectivity, Semiconductor lasers, Etching, Reflectors, Quantum wells, Indium gallium nitride, Modulation

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Proceedings Article | 4 March 2013 Paper

Paper

Depth distribution of carrier lifetimes in semipolar (1101) GaN grown by MOCVD on patterned Si substrates

N. Izyumskaya, S. Okur, F. Zhang, V. Avrutin, Ü. Özgür, S. Metzner, C. Karbaum, F. Bertram, J. Christen, H. Morkoç

Proceedings Volume 8625, 86252G (2013) https://doi.org/10.1117/12.2005514

KEYWORDS: Gallium nitride, Near field scanning optical microscopy, Silicon, Metalorganic chemical vapor deposition, Optical properties, Near field optics, Luminescence, Light emitting diodes, Carrier dynamics, Temperature metrology

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Proceedings Article | 4 March 2013 Paper

Paper

Investigation of microwave and noise properties of InAlN/GaN HFETs after electrical stress: role of surface effects

Congyong Zhu, Fan Zhang, Romualdo Ferreyra, Xing Li, Cemil Kayis, Vitaliy Avrutin, Ümit Özgür, Hadis Morkoç

Proceedings Volume 8625, 86252H (2013) https://doi.org/10.1117/12.2000558

KEYWORDS: Capacitance, Microwave radiation, Fourier transforms, Gallium nitride, Phase measurement, Phonons, Heterojunctions, Field effect transistors, Interfaces, Reliability

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Proceedings Article | 4 March 2013 Paper

Paper

InGaN based multi-double heterostructure light-emitting diodes with electron injector layers

F. Zhang, S. Hafiz, X. Li, S. Okur, V. Avrutin, Ü. Özgür, H. Morkoç

Proceedings Volume 8625, 86251J (2013) https://doi.org/10.1117/12.2003162

KEYWORDS: Light emitting diodes, Electroluminescence, Indium gallium nitride, Quantum efficiency, External quantum efficiency, Heterojunctions, Internal quantum efficiency, Temperature metrology, Quantum wells, Luminescence

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Proceedings Article | 28 February 2012 Paper

Paper

Electrical properties of ZnO:Ga as a transparent conducting oxide in InGaN based light emitting diodes

H. Y. Liu, X. Li, F. Zhang, V. Avrutin, N. Izyumskaya, Ü. Özgür, A. B. Yankovich, A. V. Kvit, P. M. Voyles, H. Morkoç

Proceedings Volume 8262, 826226 (2012) https://doi.org/10.1117/12.903930

KEYWORDS: Zinc oxide, Scattering, Gallium nitride, Light emitting diodes, Sapphire, Annealing, Crystals, Indium gallium nitride, Gallium, Phonons

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Proceedings Article | 28 February 2012 Paper

Paper

Impact of carrier localization, recombination, and diffusivity on excited state dynamics in InGaN/GaN quantum wells

T. Malinauskas, A. Kadys, T. Grinys, S. Nargelas, R. Aleksiejūnas, S. Miasojedovas, J. Mickevičius, R. Tomašiūnas, K. Jarašiūnas, M. Vengris, S. Okur, V. Avrutin, X. Li, F. Zhang, Ü. Özgür, H. Morkoç

Proceedings Volume 8262, 82621S (2012) https://doi.org/10.1117/12.906488

KEYWORDS: Quantum wells, Indium gallium nitride, Indium, Picosecond phenomena, Light emitting diodes, Diffusion, Gallium nitride, Carrier dynamics, Absorbance, Diffraction

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Proceedings Article | 28 February 2012 Paper

Paper

Effect of MOCVD growth conditions on the optical properties of semipolar (1-101) GaN on Si patterned substrates

N. Izyumskaya, S. Liu, V. Avrutin, S. Okur, F. Zhang, Ü. Özgür, S. Metzner, C. Karbaum, F. Bertram, J. Christen, D. Smith, H. Morkoç

Proceedings Volume 8262, 826224 (2012) https://doi.org/10.1117/12.909235

KEYWORDS: Gallium nitride, Silicon, Sapphire, Metalorganic chemical vapor deposition, Optical properties, Scanning electron microscopy, Quantum wells, Light emitting diodes, Luminescence, Chemical vapor deposition

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Proceedings Article | 28 February 2012 Paper

Paper

Degradation mechanism of InAlN/GaN based HFETs under high electric field stress

Congyong Zhu, Mo Wu, Cemil Kayis, Fan Zhang, Xing Li, Romualdo Ferreyra, Vitaliy Avrutin, Ümit Özgur, Hadis Morkoç

Proceedings Volume 8262, 826225 (2012) https://doi.org/10.1117/12.903983

KEYWORDS: Field effect transistors, Piezoelectric effects, Gallium nitride, Transistors, Applied physics, Reliability, Phonons, Heterojunctions, Lithium, Molybdenum

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Proceedings Article | 23 February 2012 Paper

Paper

Pyramid nano-voids in GaN and InGaN

A. Yankovich, A. Kvit, H. Liu, X. Li, F. Zhang, V. Avrutin, N. Izyumskaya, Ü. Özgür, H. Morkoc, P. Voyles

Proceedings Volume 8262, 826205 (2012) https://doi.org/10.1117/12.912097

KEYWORDS: Gallium nitride, Scanning transmission electron microscopy, Indium gallium nitride, Gallium, Transmission electron microscopy, Quantum wells, Carbon, Metalorganic chemical vapor deposition, Imaging spectroscopy, Sensors

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Proceedings Article | 10 February 2012 Paper

Paper

The impact of active layer design on quantum efficiency of InGaN light emitting diodes

F. Zhang, X. Li, S. Okur, V. Avrutin, Ü. Özgür, H. Morkoç, S. Hong, S. Yen, T. Hsu, A. Matulionis

Proceedings Volume 8262, 82621G (2012) https://doi.org/10.1117/12.903931

KEYWORDS: Light emitting diodes, External quantum efficiency, Indium gallium nitride, Quantum efficiency, Quantum wells, Lithium, Gallium, Electroluminescence, Gallium nitride, Nickel

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Proceedings Article | 4 March 2011 Paper

Paper

Vertical composition variation in nominally uniform InGaN layers revealed by aberration-corrected STEM imaging

A. Yankovich, A. Kvit, X. Li, F. Zhang, V. Avrutin, H. Liu, N. Izyumskaya, Ü. Özgür, H. Morkoç, P. Voyles

Proceedings Volume 7939, 79391E (2011) https://doi.org/10.1117/12.889392

KEYWORDS: Indium, Scanning transmission electron microscopy, Indium gallium nitride, Light emitting diodes, Gallium nitride, Transmission electron microscopy, Ions, Imaging spectroscopy, Quantum wells, Solar thermal energy

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Proceedings Article | 4 March 2011 Paper

Paper

Impact of ballistic electron transport on efficiency of InGaN based LEDs

F. Zhang, X. Li, S. Liu, S. Okur, V. Avrutin, Ü. Özgür, H. Morkoç, A. Matulionis, M. Kisin

Proceedings Volume 7939, 793917 (2011) https://doi.org/10.1117/12.875806

KEYWORDS: Light emitting diodes, Electron beam lithography, External quantum efficiency, Indium gallium nitride, Electron transport, Aluminum, Electroluminescence, Gallium nitride, Polarization, Phonons

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Showing 5 of 26 publications

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