Mr. Garima Bandhawakar Profile

Garima Bandhawakar

at Institute of Technology Banaras Hindu Univ

SPIE Involvement:

Author

Publications (2)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Proceedings Article | 20 September 2002 Paper

Logic circuit design using optically controlled MESFET

Garima Bandhawakar, B. Paul

Proceedings Volume 4927, (2002) https://doi.org/10.1117/12.464344

KEYWORDS: Field effect transistors, Switching, Optical design, Photonic integrated circuits, Logic, Transistors, Gallium arsenide, Optical circuits, Forward error correction, Integrated optics

Read Abstract +

Since their introduction in 1970's GaAs MESFETs have shown their outstanding performance in various high frequency applications, especially in upper microwave and millimeter range. After a decade in 80's research efforts in GaAs OPFET development came in to focus and gained rapid foothold in high-speed arena. The most attractive feature for development of GaAs MESFET IC's under optically controlled condition is to persue the highest possible switching speed and the other is to realize very low power dissipation, so as to make large-scale integration possible. These devices exhibit multifunction such as optical amplification, bistability and switching. Optoelectronic integrated circuits (OEICs) are of great interest and widely applied for high speed integrated circuits (IC's). Such as optical fiber communication systems, telecommunication and computer industries. In present paper we have presented a DCFL (Direct Coupled Field Effect Transistor Logic) using OPFET's. Several set of analytical equations have been derived, which relates the inverter parameter to the parameter of switching transistor and saturated load. For both the switching transistor and saturated load, MESFETs have been used and gate of switching transistor has been illuminated optically, thus a photovoltage (Vop) develop at gate. Furthermore, the photogenerated electrons in the depletion and channel region contribute to excess current which is added to dark channel current to give the total channel current. All the inverter parameters such as the load saturation current, the switching transistor threshold voltage and inverter turn - on and off time show better performance under illumination rather than under dark condition.This device using OPFET can be a useful tool in the areas of optical communication and can be used as switches and/or logic gates in OEICs.

Proceedings Article | 15 October 2001 Paper

Optically controlled E-MESFET for VLSI application

Garima Bandhawakar, B. Pal

Proceedings Volume 4600, (2001) https://doi.org/10.1117/12.444654

Read Abstract +

An enhancement mode MESFET (E-MESFET) is useful as a low voltage, low power device and plays an important role in VLSI designing .An E-MESFET behaves as a switch under optical illumination, it turns ON when light is ON and turns OFF when light is switched OFF. Studies have been made on optically controlled characteristics of an ion-implanted GaAs - MESFET which show that the drain source current can be enhanced with increasing photo voltage as well as radiation flux density. Effect of radiation becomes predominant over the impurity concentration. Sharp increase in drain to source current have been observed at flux density greater than or equal to 10²⁰ / m² .

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

ORGANIZATIONAL
Sign in with credentials provided by your organization.

Organizational Username

Organizational Password

Show/Hide Password

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years