Using nano-cathodoluminescence performed in scanning transmission electron microscope (STEM-CL), we have investigated a photonic-bandgap-crystal (PBC) laser structure at T = 17 K. In cross-sectional STEM images the full device structure is clearly resolved. The most dominant luminescence originates from the 3-fold MQW of the active region. The MQW shows a distinct peak wavelength change in growth direction indicating different structural and/or chemical properties of the individual quantum wells. In detail, a clear shift from 427 nm to 438 nm from the first to the top QW is observed, respectively.
The development of group-III nitride materials has started a new era of GaN-based high-power devices, which have achieved a remarkable progress since then. However, the current large gap between theoretical performance predictions based on material properties and device physics on one side and practically achievable device figures of merit on the other requires a deeper understanding of the complex heterostructures, their inherent electrical fields, doping properties, interface quality and crystal defects.
In this study, we will present the nano-scale correlation of structural, electronic and optical properties of a GaN-based lateral p-n+ superjunction and the two-dimensional electron gas (2DEG) of a lateral AlGaN/GaN field-effect transistor by cathodoluminescence directly performed in a scanning transmission electron microscope.
We will present nano-scale correlation of structural, electronic and optical properties of GaN-based power devices by cathodoluminescence directly performed in a scanning transmission electron microscope. The two-dimensional electron gas (2DEG) of a lateral AlGaN/GaN field-effect transistor has been investigated directly probing the local origin of the 2DEG by its spectral luminescence fingerprint. This characteristic 2DEG luminescence is locally observed nanometers inside the GaN - close to the GaN/AlN/AlGaN interface. Furthermore, a lateral p-n+ superjunction will be presented, where excitonic and donor-acceptor transitions directly visualize the space charge region evidencing the exciton dissociation in the built-in electric field.
KEYWORDS: Gallium nitride, Temperature metrology, Luminescence, Diffusion, Visualization, Spatial resolution, Scanning electron microscopy, Line scan image sensors, Excitons, Electron microscopes
A lateral p+n GaN junction with a 10 µm drift layer has been characterized by combined Cathodoluminescence (CL) and Electron-Beam-Induced Current (EBIC) measurements performed at different temperatures. A vertical CL linescan across the pn-junction shows the evolution of luminescence in growth direction. The distinct changes of local emission in the space charge region are correlated with temperature dependent EBIC profiles. In particular in the drift zone, a mono-exponential behavior with a large characteristic length was observed. These profiles are correlated to the calculated band profiles for quantifying the evolution of electrical fields in the space charge region and drift zone.
We present a nanoscopic investigation of the carrier transport into individual single InP quantum dots (QDs) of a membrane external-cavity surface-emitting laser structure (MECSEL) by means of highly spatially resolved cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope (STEM-CL). The lateral STEM-CL spectrum linescans across a single InP QD exhibit a characteristic change of excitonic transitions during this linescan. This gives direct access to the QD population by the generated excess carriers and the renormalization of the QD ground state while the electron beam approaches and subsequently recedes the QD position.
InGaN alloys have gained considerable interest over the past due to their tunable band gap extending the operation wavelengths of optoelectronic devices to green–red and IR regions. However, the realization of high In-content InGaN materials is still limited by their material properties. Despite encouraging achievements in InGaN based devices, it is difficult to achieve high quality InGaN with high indium composition. Up to now, there are only few reports about high indium content InGaN films, in particular with indium content > 50%.
Successfully grown In-rich InGaN layers with 300 nm thickness and nominally [In] = 70% deposited on GaN template by MBE were comprehensively investigated by highly spatially-resolved cathodoluminescence. The surface morphology has been investigated by atomic force microscope (AFM) and scanning electron microscopy (SEM) and shows grain-like features. The lateral as well as the vertical luminescence distribution yields a detailed insight in the [In] homogeneity. The thick InGaN films, free of droplets, have a quite homogenous emission at 1.035 eV (~1200 nm) laterally with full-width at half maximum of only 68 meV. Determined from the emission peak, the indium composition is about 75%, which is slightly higher than the nominally intended indium composition. The evolution in growth direction will be presented.
In this work we show successful metalorganic vapor phase epitaxy (MOVPE) of an AlN/AlGaN distributed Bragg reflector (DBR) that is wavelength matched to GaN quantum dots (QDs) in an AlGaN lambda cavity on top. Full insight into the growth of these structures enables the epitaxy of resonant cavity deep UV single photon emitters.
The DBR was grown on an AlN/sapphire template. In order to obtain a high reflectivity as well as a sufficiently large stopband width, the refractive index contrast needs to be maximized. Additionally, the absorption of QD emission in the high gallium containing layer needs to be minimized. A compromise was found for nominal Al-concentration of 70 % in the AlGaN layers. The resulting DBR splits up into self-organized AlN/Al(X)Ga(1-X)N/Al(Y)Ga(1-Y)N trilayers, which add up to desired lambda/2-periods. Therefore, the stopband at 272 nm with a width of 6 nm shows a maximum reflectivity of 99.7 %.
GaN QDs were obtained by growth of GaN on AlGaN for 10 s with a V/III-ratio of 30 followed by a growth interruption of 30 s. The QDs exhibit sharp emission lines with a FWHM down to 1 meV in µ-PL measurements. The main intensity of the QD ensemble emission is in the range of 250 nm to 275 nm.
Finally, spatially resolved low temperature CL measurements show resonant DBR-enhanced GaN QD emission at 271 nm showing successful wavelength match between a AlN/AlGaN deep UV DBR and GaN QDs in an AlGaN lambda-cavity on top.
We systematically studied the desorption induced GaN/AlN quantum dot formation using cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope (STEM). The GaN films were grown by metal organic vapor phase epitaxy (MOVPE) on top of an AlN/sapphire-template. After the deposition of a few monolayers GaN at 960°C a growth interruption (GRI) without ammonia supply was applied to allow for quantum dot formation. A sample series with GRI durations from 0 s to 60 s was prepared to analyze the temporal evolution systematically. Each quantum dot (QD) structure was capped with AlN grown at 1195°C.
Without GRI the cross-sectional STEM images of the reference sample reveal a continuous GaN layer with additional hexagonally-shaped truncated pyramids of 20 nm height and ~100 nm lateral diameter covering dislocation bundles. Spatially averaged spectra exhibit a broad emission band between 260 nm and 310 nm corresponding to the continuous GaN layer. The truncated pyramids exhibit only drastically reduced CL intensity in panchromatic images.
Growth interruption leads to desorption of GaN resulting in smaller islands without definite form located in close vicinity to threading dislocations. Now the emission band of the continuous GaN layer is shifted to shorter wavelengths indicating a reduction of GaN layer thickness. By applying 30 s GRI these islands exhibit quantum dot emission in the spectral range from 220 nm to 310 nm with ultra narrow line widths. For longer growth interruptions the QD ensemble luminescence is shifted to lower wavelengths accompanied by intensity reduction indicating a reduced QD density.
We present a nanometer-scale correlation of the structural, optical, and chemical properties of InGaN/GaN core-shell microrods. The core-shell microrods have been fabricated by metal organic vapor phase epitaxy (MOVPE) on c-plane GaN/sapphire templates covered with a SiO2-mask. The MOVPE process results in a homogeneous selective area growth of n-doped GaN microrods out of the mask openings. Surrounding the n-GaN core, a nominal 5 nm thick GaN shell and 30 nm thick InGaN layer were deposited.
Highly spatially resolved cathodoluminescence (CL) directly performed in a scanning transmission electron microscope (STEM) was applied to analyze the selective Indium incorporation in the thick InGaN shell and the luminescence properties of the individual layers. Cross-sectional STEM analysis reveal a hexagonal geometry of the GaN-core with m-plane side-walls. Directly at the corners of the hexagon a-plane nano-facets with a length of 45 nm are formed. The overgrowth of the GaN core with InGaN leads to a selective formation of Indium-rich domains with triangular cross-section exactly at these nano-facets as evidenced by Z-contrast imaging. Probing the local luminescence properties, the most intense CL emission appears at the m-plane side-facets with 392 nm peak wavelength. As expected, the Indium-rich triangles emit a red-shifted luminescence around 500 nm.
In the past few years, tremendous progress has been achieved on epitaxial growth and processing of group III nitride nano- and microrods. Furthermore, these growth improvements have allowed the fabrication of optoelectronic devices based nanorods as active elements, i.e. light emitting diodes (LEDs). However, their efficiency is still far behind the performance of conventional GaN-based light emitting diodes.
The controlled growth of GaN nanorods offers a potential benefit for achieving higher efficiencies of III-Nitride based optoelectronic devices due to a high surface to volume ratio. Nanorods have a very large active area compared to their footprint. Since the active region is wrapped around the three-dimensional core (for core shell structures), the active layer scales with the rod’s aspect ratio (i.e. the ratio of height and diameter). Therefore, by controlling their density, diameter and height, a tremendous increase of active surface can be achieved. Additionally, the low defect density in nanorods allows the characterization of single extended defects which is of high interest for a clear understanding of the formation of these defects.
In this study we present a direct nano-scale correlation of the optical properties with the actual real crystalline structure of single GaN nanorods using low temperature CL spectroscopy in a scanning transmission electron microscope (STEM). We concentrate on the crystalline quality, local In incorporation, n- and p-layer quality and defects of the complete structures.
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