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The simulation results are presented for both the traditional chemically amplified EUV resists and resists utilizing alternative mechanisms of image formation, such as metal based- resists.
The photolithography process consists of transferring a pattern optically from a chrome on quartz reticle onto a partially processed wafer that has been coated with photoresist. The image is transferred onto an underlying blanket of material after developing the resist by some sort of chemical and/or thermal step (etch, sinter, implant, growth, dope, etc.). This is repeated about 15 to 20 times, with each step seeing different pattern transfer steps, using different equipment. These steps may distort the wafer and its patterns, causing differences between wafers and lots. Despite this variance, each new step must precisely align to the previous layers. To accomplish this, each step of the process and every piece of equipment must be characterized. In this paper, the primary parameters and data analysis techniques that are most commonly tracked and used by photolithography engineers are reviewed.
This will count as one of your downloads.
You will have access to both the presentation and article (if available).
The class connects lithographic science to process control, and appropriate statistical methods useful for lithographers are introduced. Specific topics include:
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- Statistical process control, focusing on aspects particular to lithography
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- Efficient measurement sampling plans for achieving desired accuracy
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- Cause-and-effect diagrams in the context of lithography
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- Control issues specific to critical dimensions
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- Control issues specific to overlay
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- Control issues specific to EUV lithography
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- Edge placement errors
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- Yield issues specific to lithography
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- Metrology for lithographic applications
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- Automatic process control
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- Control of operations
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