Various technologies such as multiple patterning (MP) are being developed to extend the current DUV optical
lithography to deal with the delay of next generation lithography such as EUV and NIL. Likewise, it is necessary to
continue to develop technologies for mask inspection tools for masks fabricated for the DUV optical lithography so that
they can be appropriately inspected, until the next generation EB or EUV actinic inspection tools is put into practical use.
To fabricate 1x nm devices with the present lithography process, the industry will likely further extend double
patterning (DP) to multiple patterning (MP). For MP, the requirements for the inspection sensitivity of traditional defects
such as intrusions or extrusions do not change much, but those for CD control and overlay tolerances will become more
critical.
In this paper, we will discuss the main features of NPI-7000, a DUV based mask inspection tool for the 1x nm node
devices, and our challenges in enhancing the CD error sensitivities to enable the inspection of masks.
Photo lithography potential expands for 32nm node to 2xnm device production by the development of immersion technology and the introduction of phase shift mask, and NPI-6000 using 199nm laser source was developed to correspond to 2xnm node photo mask pattern inspection. On the other hand, EUV lithography with 13.5nm exposure wavelength is dominant candidate for the next generation lithography because of its excellent resolution for 1x half pitch (hp) node device. But, applying 199nm optics to complicated lithography exposure tool option for hp2x nm node and beyond, further development such as image contrast enhancement will be needed.
Therefore, a new mask inspection tool, NPI-7000, has been developed. This tool can implement not only photo mask pattern (hp1x) inspection, but also EUV mask pattern inspection (hp2x) and blanks inspection with high throughput. In this paper, features of NPI-7000 and new developed technologies were described and applied results to EUV mask inspections were introduced.
EUV lithography is expected to be not only for hp 2Xnm node device production method but also for hp 1X nm
node. We have already developed the mask inspection system using 199nm wavelength with simultaneous transmitted
and reflected illumination optics, which utilize p-polarized and s-polarized illumination for high defect detection
sensitivity, and we developed a new image contrast enhancement method which changes the digitizing rate of imaging
sensor depending on the signal level. Also, we evaluate the mask structure which improve the image contrast and defect
detection sensitivity. EUVL-mask has different configuration from transmitted type optical-mask. A captured image
simulator has been developed to study the polarized illumination performance theoretically of our inspection system.
Preferable mask structure for defect detection and possibility of miss defect detection are considered.
Lithography potential expands for 45nm node to 32nm device production by the development of immersion
technology and the introduction of phase shift mask. We have already developed the mask inspection system using
199nm wavelength with simultaneous transmitted illumination and reflected illumination optics, and is an effectual
candidate for hp 32nm node mask inspection. Also, it has high defect sensitivity because of its high optical resolution, so
as to be utilized for leading edge mask to next generation lithography. EUV lithography with 13.5nm exposure
wavelength is dominant candidate for the next generation lithography because of its excellent resolution for 2x half pitch
(hp) node device. But, applying 199nm optics to complicated lithography exposure tool option for hp2x nm node and
beyond, further development such as image contrast enhancement will be needed. EUVL-mask has different
configuration from transmitted type optical-mask. It is utilized for reflected illumination type exposure tool. Its
membrane structure has reverse contrast compared with optical-mask. This nature leads image profile difference from
optical-mask. A feasibility study was conducted for EUV mask pattern defect inspection using DUV illumination optics
with two TDI (Time Delay Integration) sensors. To optimize the inspection system configuration, newly developed Nonlinear
Image Contrast Enhancement method (NICE) is presented. This function capability greatly enhances inspectability
of EUVL mask.
In this paper, we will report on our experimental results on the impact of inspection system optics on mask defect
detection sensitivity. We evaluated the capability of detecting defects on the EUVL masks by using a new inspection
tool (NPI6000EUVα) made by NuFlare Technology, Inc. (NFT) and Advanced Mask Inspection Technology, Inc.
(AMiT). This tool is based on NPI-5000 which is the leading-edge photomask defect inspection system using 199nm
wavelength inspection optics. The programmed defect mask with LR-TaBN absorber was used which had various sized
opaque and clear extension defects on hp-180nm, hp-128nm, and hp-108nm line and space patterns. According to the
analysis, to obtain optimum sensitivity for various types of defects, using both C- and P-polarized illumination
conditions were found to be effective. At present, sufficient defect-detection sensitivity is achieved for opaque and clear
extension defects in hp128nm (hp32nm at wafer). For hp108nm (hp27nm at wafer), using both C- and P- polarized
illumination is effective. However, further developments in defect-detection sensitivity are necessary.
A novel EUV mask inspection tool with 199nm laser source and super-resolution technique has been developed.
This tool is based on NPI-5000PLUS, which is a photo-mask inspection tool for hp2X nm node and beyond. In order to
implement EUV mask inspection with only a short time for mask set-up, reflected illumination type alignment optics to
guide alignment mark and adjust mask coordinate with visible illumination light are equipped. Moreover, to inspect EUV
masks for hp2X nm and beyond, the image detection optics with the novel polarized illumination technique is
incorporated in this tool. Image contrast enhancement was confirmed by experiments and simulations.
In this paper, we will report on our experimental and simulation results on the impact of EUVL mask absorber
structure and of inspection system optics on mask defect detection sensitivity. We employed a commercial simulator
EM-Suite (Panoramic Technology, Inc.) which calculated rigorously using FDTD (Finite-difference time-domain)
method. By using various optical constants of absorber stacks, we calculated image contrasts and defect image signals as
obtained from the mask defect inspection system. We evaluated the image contrast and the capability of detecting
defects on the EUVL masks by using a new inspection tool made by NuFlare Technology, Inc. (NFT) and Advanced
Mask Inspection Technology, Inc. (AMiT). This tool is based on NPI-5000 which is the leading-edge photomask defect
inspection system using 199nm wavelength inspection optics. The programmed defect masks with LR-TaBN and LRTaSi
absorbers were used which had various sized opaque and clear extension defects on hp-160nm, hp-225nm, and hp-
325nm line and space patterns. According to the analysis, reflectivity of EUVL mask absorber structures and the
inspection optics have large influence on image contrast and defect sensitivity. It is very important to optimize absorber
structure and inspection optics for the development of EUVL mask inspection technology, and for the improvement of
performance of EUV lithographic systems.
The lithography potential of an ArF (193nm) laser exposure tool with high numerical aperture (NA) will expand its
lithography potential to 45nm node production and even beyond. Consequently, a mask inspection system with a
wavelength nearly equal to 193nm is required so as to detect defects of the masks using resolution enhancement
technology (RET). A novel high-resolution mask inspection platform using DUV wavelength has been developed, which
works at 199nm. The wavelength is close to the wavelength of ArF exposure tool. In order to adapt 199nm optics for
hp2x nm node and beyond defect detection on next generation mask with appropriate condition, further development
such as the illumination condition modification technique has been studied. The illumination optics has the advantageous
feature that super-resolution method is applied by adding the optics. To evaluate the super-resolution effect of
illumination condition control optics, the interaction of light with mask features is calculated rigorously using RCWA
(Rigorous Coupled-Wave Analysis) method.
In this paper, image contrast enhancement effect using newly designed super-resolution optics which is applied to
transmitted and reflected light image acquisition system are presented with simulation and experiment.
In this paper, we will report on our experimental and simulation results on the impact of EUVL mask absorber
structure and of inspection system optics on mask defect detection sensitivity. We employed a commercial simulator
EM-Suite (Panoramic Technology, Inc.) which calculated rigorously using FDTD (Finite-difference time-domain)
method. By using various optical constants of absorber stacks, we calculated image contrasts and defect image signals as
obtained from the mask defect inspection system. We evaluated the image contrast and the capability of detecting
defects on the EUVL masks by using a new inspection tool made by NuFlare Technology, Inc. (NFT) and Advanced
Mask Inspection Technology, Inc. (AMiT). This tool is based on NPI-5000 which is the leading-edge photomask defect
inspection system using 199nm wavelength inspection optics. The programmed defect masks with LR-TaBN and LRTaSi
absorbers were used which had various sized opaque and clear extension defects on hp-160nm, hp-225nm, and hp-
325nm line and space patterns. According to the analysis, reflectivity of EUVL mask absorber structures and the
inspection optics have large influence on image contrast and defect sensitivity. It is very important to optimize absorber
structure and inspection optics for the development of EUVL mask inspection technology, and for the improvement of
performance of EUV lithographic systems.
We evaluated the capability of a commercially available DUV system equipped with
reflective inspection optics with the shortest inspection wavelength of 199nm in detecting
pattern defect on EUVL mask of hp45nm programmed defect pattern. The sensitivity of the
system for opaque extension defects for hp45nm node was quite acceptable but for clear
extension defects the sensitivity of the system was rather poor. In this paper, the influence of
base pattern size on inspection sensitivities for opaque and clear extension defects is discussed.
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