One of the critical issue of EUV lithography is fabrication of defect-free mask. The origin of the defect is a particle inside
the multilayer and bump or pit on glass substrate. This type of defect is called a phase defect. If there is a phase defect, the
reflection phase is disordered. As a result, the phase structure is printed as a defect on a wafer. Thus, we have developed
micro coherent EUV scatterometry microscope (we called micro-CSM) for phase defect characterization. Micro-CSM
records scattering signal from a defect directly exposed by focused coherent EUV having a spot size of φ140-nm in
diameter. An off-axis-type Fresnel zone plate was employed as a focusing optics. Phase distribution of the defect is
reconstructed with the scattering image by the coherent-diffraction-imaging method. We observed actual phase defects in
this work. Actual phase defects were on a mask blanks which was the same grade of the pre-production mask of the
semiconductor devices. The positions of actual phase defects have been already inspected by the actinic blank inspection
tool. And, the actual phase defects have been already observed using an atomic force microscope. A purpose of this work is
observation of these actual defects using micro-CSM and comparison of the results.
To review phase and amplitude defect on extreme ultraviolet (EUV) mask with EUV intensity and phase contrast, we
have developed the micro coherent EUV scatterometry microscope (micro-CSM). A coherent EUV beam was focused on
a defect using a Fresnel zoneplate, where the illumination size was 140 nm diameter. Diffraction from the defect was
captured by an EUV CCD camera directly. The diffraction signal was depended on the zoneplate focus, where the defect
signal was efficiently detected at a best focus position. To review an actual EUV mask that has no focus-alignment
pattern on surface, we developed a focusing method using a speckle signal.
To evaluate defects on extreme ultraviolet (EUV) masks at the blank state of manufacturing, we developed a micro-coherent EUV scatterometry microscope (micro-CSM). The illumination source is coherent EUV light with a 140 nm focus diameter on the defect using a Fresnel zone plate. This system directly observes the reflection and diffraction signals from a phase defect. The phase and the intensity image of the defect are reconstructed with the diffraction images using ptychography, which is an algorithm of the coherent diffraction imaging. We observed programmed phase defect on a blank EUV mask. Phase distributions of these programmed defects were well reconstructed quantitatively. The micro-CSM is a very powerful tool to review an EUV phase defect.
To evaluate defects on extreme ultraviolet (EUV) masks at the blank state of manufacturing, we developed a micro
coherent EUV scatterometry microscope (micro-CSM). The illumination source is coherent EUV light with a 140-nm
focus diameter on the defect using a Fresnel zoneplate. This system directly observes the reflection and diffraction
signals from a phase defect. The phase and the intensity image of the defect is reconstructed with the diffraction images
using ptychography, which is an algorithm of the coherent diffraction imaging. We observed programmed phase defect
on a blank EUV mask. Phase distributions of these programmed defect were well reconstructed quantitatively. The
micro-CSM is very powerful tool to review an EUV phase defect.
In extreme-ultraviolet (EUV) lithography, mirror optics is coated with a Mo/Si multilayer film. Since throughput of an EUV system is directly depends on the multilayer film reflectance, we have developed a mask reflectometer to evaluate the reflectance in BL-10 beamline of the NewSUBARU synchrotron facility. In particular, the EUV output power from a EUV light source relates to the reflectance of a collector mirror. Thus, we installed a new large reflectometer in BL-10 beamline to evaluate the collector mirror reflectance. The reflectometer can measure a mirror with a diameter of up to 800 mm, a thickness of 250 mm, and a weight of 50 kg. The entire sample surface can be measured in spherical coordinate using vertical γ and rotation Φ axis. Each axis positions are measured with optical encoders precisely, and are controlled in closed-loop operation. We measured reflectance of an EUV mask using the large reflectometer and the mask reflectometer. The peak reflectance was well consisted with the two reflectometer within 0.1%. The large reflectometer has high reproducibility of the peak reflectance measurement.
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