Dr. Hiroaki Oizumi Profile

Dr. Hiroaki Oizumi

Deptartment Manager at Gigaphoton Inc

SPIE Involvement:

Author

Publications (38)

Proceedings Article | 2 March 2020 Paper

Paper

High peak power DUV laser processing

Yasuhiro Kamba, Hironori Igarashi, Takashi Onose, Taisuke Miura, Ryoichi Nohdomi, Hiroaki Oizumi, Yoshihiko Murakami, Atsushi Fuchimukai, Chen Qu, Yuki Tamaru, Yohei Tanaka, Yuujirou Sasaki, Junichi Fujimoto, Hakaru Mizoguchi

Proceedings Volume 11273, 112730L (2020) https://doi.org/10.1117/12.2549826

KEYWORDS: Excimer lasers, Deep ultraviolet, Laser processing, Pulsed laser operation, Picosecond phenomena, Laser drilling, Semiconductors, Lithography, Fiber lasers, Light sources

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Proceedings Article | 16 May 2017 Paper

Paper

DUV high power lasers processing for glass and CFRP

Masakazu Kobayashi, Kouji Kakizaki, Hiroaki Oizumi, Toshio Mimura, Junichi Fujimoto, Hakaru Mizoguchi

Proceedings Volume 10238, 102381D (2017) https://doi.org/10.1117/12.2266233

KEYWORDS: Excimer lasers, Microscopes, Laser ablation, Scanning electron microscopy, Deep ultraviolet, Laser processing, Glasses, High power lasers, Laser cutting, Manufacturing, Laser drilling, Materials processing, Micromachining

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Proceedings Article | 22 February 2017 Presentation + Paper

Presentation + Paper

193nm high power lasers for the wide bandgap material processing

Junichi Fujimoto, Masakazu Kobayashi, Koji Kakizaki, Hiroaki Oizumi, Toshio Mimura, Takashi Matsunaga, Hakaru Mizoguchi

Proceedings Volume 10097, 100970T (2017) https://doi.org/10.1117/12.2250706

KEYWORDS: Excimer lasers, Deep ultraviolet, Materials processing, High power lasers, Laser processing, Solid state lasers, Semiconductor manufacturing, Reliability, Annealing, Glasses, Laser ablation, Scanning electron microscopy, Infrared lasers, Micromachining, Copper

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Proceedings Article | 9 November 2016 Paper

Paper

High power DUV lasers for material processing

Toshio Mimura, Kouji Kakizaki, Hiroaki Oizumi, Masakazu Kobayashi, Junichi Fujimoto, Takashi Matsunaga, Hakaru Mizoguchi

Proceedings Volume 10016, 1001603 (2016) https://doi.org/10.1117/12.2247870

KEYWORDS: Excimer lasers, Laser processing, Deep ultraviolet, Materials processing, High power lasers, Solid state lasers, Heat treatments, Glasses, Pulsed laser operation, Laser bonding

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Proceedings Article | 16 March 2016 Paper

Paper

Development of high coherence high power 193nm laser

Satoshi Tanaka, Masaki Arakawa, Atsushi Fuchimukai, Yoichi Sasaki, Takashi Onose, Yasuhiro Kamba, Hironori Igarashi, Chen Qu, Mitsuru Tamiya, Hiroaki Oizumi, Shinji Ito, Koji Kakizaki, Hongwen Xuan, Zhigang Zhao, Yohei Kobayashi, Hakaru Mizoguchi

Proceedings Volume 9726, 972624 (2016) https://doi.org/10.1117/12.2211210

KEYWORDS: Solid state lasers, Excimer lasers, Laser systems engineering, Deep ultraviolet, Optical amplifiers, Amplifiers, Crystals, High power lasers, Semiconducting wafers, Fiber amplifiers

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Proceedings Article | 5 April 2012 Paper

Paper

Mechanism of photoresist shrinkage investigated by single-line scan of electron beam

Takeyoshi Ohashi, Hiroaki Oizumi, Junichi Tanaka, Hiroki Kawada

Proceedings Volume 8324, 83242U (2012) https://doi.org/10.1117/12.916269

KEYWORDS: Photoresist materials, Scanning electron microscopy, Electron beams, Solids, Cadmium, Monte Carlo methods, Lithography, Solid state lighting, Metrology, Extreme ultraviolet lithography

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Shrinkage behavior caused by a single-line scan of an electron beam over a photoresist line was studied, including shrinkage distribution in the photoresist-line direction. As single-line scan is the minimum unit of controllable electron-beam irradiation during scanning-electron-microscope-image (SEM-image) processing, the minimum amount of shrinkage should be observed in the condition. A new method for evaluating the minute amount shrinkage and the shrinkage distribution caused by a single-line scan was developed. According to the results of evaluations with this method, the shrinkage of a 50-nm-wide photoresist line caused by a single-line scan is less than 0.1 nm under landing energies of 200, 300, and 500 eV and probe current of 8 pA. This shrinkage is more than ten times smaller than the typical amount of shrinkage caused by a standard two-dimensional scan. This result indicates the possibility of a significant reduction of photoresist shrinkage during SEM measurements. The evaluations also show that the shrinkage caused by a single-line scan distributes more than about 30 nm in the photoresist-line direction, which is wider than the simulated electron-scattering range. Moreover, the evaluations show that the shrinkage distribution is narrower at higher position of the photoresist-line. This tendency suggests that the wide shrinkage-distribution does not stem from the distribution of the back-scattered electrons (BSEs) which enter the side wall of the photoresist line from the spaces nearby, because the incidents of BSEs distribute wider at higher position of the photoresist-line. Hence, shrinkage occurs in a wider region of the photoresist line than the region where electrons (including directly incident electrons and BSEs) reach. This result suggests that in order to interpret the photoresist-shrinkage mechanism it is important to clarify how the microscopic volume-reduction caused by electron-molecule interactions is integrated into macroscopic photoresist-pattern deformation. An elastic deformation is a plausible mechanism for this macroscopic photoresist-shrinkage process.

Proceedings Article | 16 April 2011 Paper

Paper

Analysis of resist patterns for material and process design: parameter extraction from dose pitch matrices of line-width and edge roughness and cross-sectional SEM images

Takahiro Kozawa, Hiroaki Oizumi, Toshiro Itani, Seiichi Tagawa

Proceedings Volume 7972, 79720U (2011) https://doi.org/10.1117/12.879331

KEYWORDS: Line edge roughness, Extreme ultraviolet lithography, Matrices, Chemical analysis, Image processing, Chemically amplified resists, Extreme ultraviolet, Quantum efficiency, Materials processing, Glasses

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Proceedings Article | 16 April 2011 Paper

Paper

Performance of EUV molecular resists based on fullerene derivatives

Hiroaki Oizumi, Kentaro Matsunaga, Koji Kaneyama, Julius Joseph Santillan, Gousuke Shiraishi, Toshiro Itani

Proceedings Volume 7972, 797209 (2011) https://doi.org/10.1117/12.879302

KEYWORDS: Fullerenes, Line width roughness, Extreme ultraviolet lithography, Extreme ultraviolet, Lithography, Photoresist processing, Semiconducting wafers, Semiconductors, Etching, Scanning electron microscopy

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Proceedings Article | 8 April 2011 Paper

Paper

Relationships between EUV resist outgassing and contamination deposition at Selete

Hiroaki Oizumi, Kazuyuki Matsumaro, Satoshi Nomura, Julius Joseph Santillan, Toshiro Itani, Takeo Watanabe, Naohiro Matsuda, Tetsuo Harada, Hiroo Kinoshita

Proceedings Volume 7969, 796921 (2011) https://doi.org/10.1117/12.878571

KEYWORDS: Contamination, Extreme ultraviolet, Extreme ultraviolet lithography, Mirrors, Spectroscopy, Photography, Statistical analysis, Protactinium, Optical components, Line width roughness

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Proceedings Article | 25 March 2011 Paper

Paper

Development status of EUV resist materials and processing at Selete

Kentaro Matsunaga, Gousuke Shiraishi, Julius Joseph Santillian, Koji Kaneyama, Hiroaki Oizumi, Toshiro Itani

Proceedings Volume 7969, 796905 (2011) https://doi.org/10.1117/12.878432

KEYWORDS: Lithography, Line width roughness, Photoresist processing, Extreme ultraviolet, Extreme ultraviolet lithography, Polymers, Etching, Semiconductors, Manufacturing, Scanning electron microscopy

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Proceedings Article | 31 March 2010 Paper

Paper

Development of molecular resists based on Phenyl[4]calixarene derivatives.

Masatoshi Echigo, Hiromi Hayashi, Hiroaki Oizumi, Kazuyuki Matsumaro, Toshiro Itani

Proceedings Volume 7639, 76392B (2010) https://doi.org/10.1117/12.846475

KEYWORDS: Extreme ultraviolet lithography, Optical lithography, Cadmium sulfide, Line edge roughness, Industrial chemicals, Standards development, Lithography, Polymers, Electron beam lithography, Extreme ultraviolet

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Proceedings Article | 26 March 2010 Paper

Paper

Development of EUV resists based on various new materials

Hiroaki Oizumi, Kazuyuki Matsumaro, Julius Santillan, Gousuke Shiraishi, Koji Kaneyama, Kentaro Matsunaga, Toshiro Itani

Proceedings Volume 7639, 76390R (2010) https://doi.org/10.1117/12.846429

KEYWORDS: Fullerenes, Extreme ultraviolet lithography, Line width roughness, Extreme ultraviolet, Lithography, Semiconductors, Manufacturing, Photoresist processing, Scanning electron microscopy, Etching

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Proceedings Article | 26 March 2010 Paper

Paper

Analysis of trade-off relationships in resist patterns delineated using SFET of Selete

Takahiro Kozawa, Hiroaki Oizumi, Toshiro Itani, Seiichi Tagawa

Proceedings Volume 7639, 76390B (2010) https://doi.org/10.1117/12.846500

KEYWORDS: Line edge roughness, Extreme ultraviolet lithography, Chemical analysis, Extreme ultraviolet, Chemically amplified resists, Line width roughness, Matrices, Image processing, Scanning electron microscopy, Lithography

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Proceedings Article | 23 March 2010 Paper

Paper

Development of novel positive-tone resists for EUVL

Takanori Owada, Hideaki Shiotani, Kayoko Aoyama, Takashi Kashiwamura, Mitsuru Shibata, Testuro Takeya, Hiroaki Oizumi, Toshiro Itani

Proceedings Volume 7636, 763632 (2010) https://doi.org/10.1117/12.846069

KEYWORDS: Extreme ultraviolet lithography, Lithography, Extreme ultraviolet, Line edge roughness, Line width roughness, Scanning electron microscopy, Electron beam lithography, Photoresist processing, Semiconductors, Electron beams

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Proceedings Article | 23 March 2010 Paper

Paper

Evaluations of EUV resist outgassing by gas chromatography mass spectrometry (GC-MS)

Hiroaki Oizumi, Kazuyuki Matsumaro, Julius Santillan, Toshiro Itani

Proceedings Volume 7636, 76362W (2010) https://doi.org/10.1117/12.846269

KEYWORDS: Extreme ultraviolet, Mass spectrometry, Calibration, Chromatography, Extreme ultraviolet lithography, Ions, Ionization, Chemical analysis, Semiconducting wafers, Molecules

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Proceedings Article | 20 March 2010 Paper

Paper

Development of resist material and process for hp-2x-nm devices using EUV lithography

Kentaro Matsunaga, Hiroaki Oizumi, Koji Kaneyama, Gousuke Shiraishi, Kazuyuki Matsumaro, Julius Joseph Santillan, Toshiro Itani

Proceedings Volume 7636, 76360S (2010) https://doi.org/10.1117/12.846088

KEYWORDS: Extreme ultraviolet lithography, Lithography, Photoresist processing, Line width roughness, Extreme ultraviolet, Manufacturing, Materials processing, Semiconductors, Analytical research, Semiconducting wafers

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Proceedings Article | 1 April 2009 Paper

Paper

EUV resist outgassing quantification and application

Shinji Kobayashi, Julius Joseph Santillan, Hiroaki Oizumi, Toshiro Itani

Proceedings Volume 7273, 72731P (2009) https://doi.org/10.1117/12.813362

KEYWORDS: Molecules, Extreme ultraviolet, Extreme ultraviolet lithography, Ions, Protactinium, Contamination, Semiconducting wafers, Mirrors, Quality measurement, Chemical analysis

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Proceedings Article | 1 April 2009 Paper

Paper

Development of EUV resists at Selete

Hiroaki Oizumi, Daisuke Kawamura, Koji Kaneyama, Shinji Kobayashi, Toshiro Itani

Proceedings Volume 7273, 72731M (2009) https://doi.org/10.1117/12.812937

KEYWORDS: Line width roughness, Extreme ultraviolet, Extreme ultraviolet lithography, Optical lithography, Manufacturing, Standards development, Semiconductors, Photoresist processing, Chemically amplified resists, Diffusion

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Proceedings Article | 4 December 2008 Paper

Paper

Current benchmarking results of EUV resist at Selete

Daisuke Kawamura, Koji Kaneyama, Shinji Kobayashi, Hiroaki Oizumi, Toshiro Itani

Proceedings Volume 7140, 714008 (2008) https://doi.org/10.1117/12.804665

KEYWORDS: Line width roughness, Extreme ultraviolet, Convolution, Lithographic illumination, Extreme ultraviolet lithography, Scanning electron microscopy, Polymers, Manufacturing, Electroluminescence, Point spread functions

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Proceedings Article | 4 April 2008 Paper

Paper

Adamantane-based molecular glass resist for 193-nm lithography and beyond

Shinji Tanaka, Nobuaki Matsumoto, Hidetoshi Ohno, Naoyoshi Hatakeyama, Katsuki Ito, Kazuya Fukushima, Hiroaki Oizumi, Iwao Nishiyama

Proceedings Volume 6923, 69231J (2008) https://doi.org/10.1117/12.772249

KEYWORDS: Glasses, Lithography, Refractive index, Polymers, Transparency, Extreme ultraviolet lithography, Radium, Optical lithography, Immersion lithography, Sulfur

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Proceedings Article | 26 March 2008 Paper

Paper

Development of novel positive-tone resists for EUVL

Takanori Owada, Takeo Watanabe, Hiroo Kinoshita, Hiroaki Oizumi, Iwao Nishiyama

Proceedings Volume 6923, 692346 (2008) https://doi.org/10.1117/12.772404

KEYWORDS: Extreme ultraviolet lithography, Line edge roughness, Etching, Extreme ultraviolet, Glasses, Molecules, Lithography, Polymers, Optical lithography, Synchrotrons

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Proceedings Article | 20 March 2008 Paper

Paper

Carbon contamination of EUV mask: film characterization, impact on lithographic performance, and cleaning

Yasushi Nishiyama, Toshihisa Anazawa, Hiroaki Oizumi, Iwao Nishiyama, Osamu Suga, Kazuki Abe, Satoru Kagata, Akira Izumi

Proceedings Volume 6921, 692116 (2008) https://doi.org/10.1117/12.771978

KEYWORDS: Carbon, Reflectivity, Photomasks, Multilayers, Extreme ultraviolet, Contamination, Lithography, Tantalum, Hydrogen, X-rays

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Proceedings Article | 12 April 2007 Paper

Paper

Distribution control of protecting groups and its effect on LER for EUV molecular resist

Daiju Shiono, Hideo Hada, Hiroto Yukawa, Hiroaki Oizumi, Iwao Nishiyama, Kyoko Kojima, Hiroshi Fukuda

Proceedings Volume 6519, 65193U (2007) https://doi.org/10.1117/12.711311

KEYWORDS: Line edge roughness, Lithography, Extreme ultraviolet lithography, Extreme ultraviolet, Inspection, Scanning electron microscopy, Analytical research, Optical lithography, Silicon films, Silicon

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Proceedings Article | 12 April 2007 Paper

Paper

Resist evaluation for EUV application at ASET

Doohoon Goo, Yuusuke Tanaka, Yukiko Kikuchi, Hiroaki Oizumi, Iwao Nishiyama

Proceedings Volume 6519, 65191M (2007) https://doi.org/10.1117/12.711980

KEYWORDS: Line width roughness, Polymers, Extreme ultraviolet, Extreme ultraviolet lithography, Photomasks, Semiconducting wafers, Modulation, Printing, Photoresist processing, Additive manufacturing

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Although EUV lithography has been prepared for next generation litho-technique for several years, there are still lots of obstacles on its way. Especially, phase defect from the mask, and immaturity in the resist should be solved as soon as possible because they are directly related to realizing patterns on the wafer. ASET has been focusing on these two problems, that is, the mask-related defect control and the resist screening for EUV application. In this study, we concentrate on the resist evaluation for the EUV lithography application, mainly commercial CAR (Chemically- Amplified Resist) type resist, for example, ArF resist based on polymethacrylate and KrF resist based on poly(4- hydroxystyrene) (PHS). We screened tens of resists in viewpoint of resolution, photo-speed, and LWR (Line Width Roughness). We used two METs (Micro-Exposure Tools). The one is HiNA in ASET and the other is MET in Lawrence Berkeley National Lab. (LBNL) to evaluate resist. And we used EUV masks fabricated by DNP and ASET. Some resist showed modulation on the wafer for 28nm-hp line and space pattern and some resist showed very high photo-speed about 5mJ/cm². Photo-speed could be improved about 25% by controlling the amount of additives, PAG and quencher. However, improvement in photo-speed caused degradation in resolution. This means there are trade-off relation between resolution and photo-speed. And we also evaluated polymer-bound PAG resist, which showed new possibility for EUV resist. And we encountered unexpected problem, pattern lifting, which was solved by using bufferlayer to increase attachment force between resist and wafer surface. We conclude that polymer bound PAG resist is a good approach to lower LWR of resist for EUVL application and bufferlayer tuning and matching with resist is also needed for low LWR. The EUVL masks were fabricated by Dai Nippon Printing Co., Ltd. The HiNA set-3 projection optics were developed and provided by Nikon Corporation. This work was supported by NEDO.

Proceedings Article | 4 April 2007 Paper

Paper

An analysis of EUV-resist outgassing measurements

Kim Dean, Iwao Nishiyama, Hiroaki Oizumi, Anthony Keen, Heidi Cao, Wang Yueh, Takeo Watanabe, Paolo Lacovig, Luca Rumiz, Gregory Denbeaux, Julia Simon

Proceedings Volume 6519, 65191P (2007) https://doi.org/10.1117/12.712379

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Synchrotrons, Contamination, Mass spectrometry, Molecules, Mirrors, Analytical research, Calibration, EUV optics

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Proceedings Article | 22 March 2007 Paper

Paper

Atomic hydrogen cleaning of Ru-capped EUV multilayer mirror

Kumi Motai, Hiroaki Oizumi, Shinji Miyagaki, I. Nishiyama, Akira Izumi, Tomoya Ueno, Yasuo Miyazaki, Akira Namiki

Proceedings Volume 6517, 65170F (2007) https://doi.org/10.1117/12.711998

KEYWORDS: Hydrogen, Ruthenium, Extreme ultraviolet, Reflectivity, Oxides, Mirrors, Plasma, Extreme ultraviolet lithography, Protactinium, Oxidation

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Proceedings Article | 24 March 2006 Paper

Paper

Printability of contact-hole patterns in EUVL using 0.3-NA HiNA optics

Yuusuke Tanaka, Hiroaki Oizumi, Yukiko Kikuchi, DooHoon Goo, Fumiaki Kumasaka, Iwao Nishiyama

Proceedings Volume 6151, 61512S (2006) https://doi.org/10.1117/12.656126

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Optical lithography, Lithography, Extreme ultraviolet, Binary data, Optical proximity correction, Projection systems, Printing, Mirrors

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Proceedings Article | 24 March 2006 Paper

Paper

Ultimate fine-pitch resist patterning using the ASET-HINA

H. Oizumi, Y. Tanaka, F. Kumasaka, I. Nishiyama

Proceedings Volume 6151, 61512Q (2006) https://doi.org/10.1117/12.656050

KEYWORDS: Polymers, Extreme ultraviolet lithography, Optical lithography, Lithography, Extreme ultraviolet, Projection systems, Photomasks, Electron beam lithography, Polymer thin films, Semiconducting wafers

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Proceedings Article | 24 March 2006 Paper

Paper

Sub-32nm patterning using EUVL at ASET

Doohoon Goo, Yuusuke Tanaka, Yukiko Kikuchi, Hiroaki Oizumi, Iwao Nishiyama

Proceedings Volume 6151, 61512R (2006) https://doi.org/10.1117/12.656124

KEYWORDS: Extreme ultraviolet lithography, Line width roughness, Photomasks, Extreme ultraviolet, Lithography, Immersion lithography, Semiconducting wafers, Resolution enhancement technologies, Optical lithography, Nanoimprint lithography

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Proceedings Article | 22 March 2006 Paper

Paper

Evaluation of resolution and LER in the resist patterns replicated by EUV microexposure tools

Yukiko Kikuchi, Yuusuke Tanaka, Hiroaki Oizumi, Fumiaki Kumasaka, DooHoon Goo, Iwao Nishiyama

Proceedings Volume 6151, 615107 (2006) https://doi.org/10.1117/12.655106

KEYWORDS: Line edge roughness, Extreme ultraviolet, Mirrors, Extreme ultraviolet lithography, Photomasks, Optics manufacturing, Reflectivity, Semiconducting wafers, Manufacturing, Imaging systems

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Proceedings Article | 6 May 2005 Paper

Paper

Contamination removal from EUV multilayer using atomic hydrogen generated by heated catalyzer

H. Oizumi, H. Yamanashi, I. Nishiyama, K. Hashimoto, S. Ohsono, A. Masuda, A. Izumi, H. Matsumura

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.601136

KEYWORDS: Carbon, Extreme ultraviolet, Hydrogen, Reflectivity, Contamination, Optical testing, Silicon, Thermal effects, Synchrotron radiation, Protactinium

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Proceedings Article | 6 May 2005 Paper

Paper

Lithographic performance of high-numerical-aperture (NA=0.3) EUV small-field exposure tool (HINA)

H. Oizumi, Y. Tanaka, F. Kumasaka, I. Nishiyama, H. Kondo, M. Shiraishi, T. Oshino, K. Sugisaki, K. Murakami

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.599435

KEYWORDS: Extreme ultraviolet lithography, Lithography, Photomasks, Projection systems, Mirrors, Lithographic illumination, Light sources, Printing, Extreme ultraviolet, Spherical lenses

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Proceedings Article | 6 May 2005 Paper

Paper

Evaluation of pattern fidelity in EUVL using a high-numerical-aperture small-field EUV exposure tool (HiNA)

Yuusuke Tanaka, Hiroaki Oizumi, Takeo Hashimoto, Fumiaki Kumasaka, Iwao Nishiyama, Tsukasa Abe, Hiroshi Mohri, Naoya Hayashi

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.599050

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Optical proximity correction, Projection systems, Wavefronts, Image processing, Printing, Extreme ultraviolet, Optical lithography, Semiconducting wafers

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Proceedings Article | 18 October 2004 Paper

Paper

Fabrication of aspherical mirrors for EUV projection optics set-3 of HiNA

Tetsuya Oshino, Shin-ichi Takahashi, Takahiro Yamamoto, Tatsuro Miyoshi, Masayuki Shiraishi, Takaharu Komiya, Noriaki Kandaka, Hiroyuki Kondo, Kiyoto Mashima, Kazushi Nomura, Katsuhiko Murakami, Hiroaki Oizumi, Iwao Nishiyama, Shinji Okazaki

Proceedings Volume 5533, (2004) https://doi.org/10.1117/12.559210

KEYWORDS: Mirrors, Wavefronts, Projection systems, Polishing, Semiconducting wafers, Extreme ultraviolet lithography, Spatial frequencies, Photomasks, Coating, Mirror mounts

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Proceedings Article | 20 May 2004 Paper

Paper

Fabrication of aspherical mirrors for HiNA (high numerical aperture EUV exposure tool) set-3 projection optics

Tetsuya Oshino, Takahiro Yamamoto, Tatsuro Miyoshi, Masayuki Shiraishi, Takaharu Komiya, Noriaki Kandaka, Hiroyuki Kondo, Kiyoto Mashima, Kazushi Nomura, Katsuhiko Murakami, Hiroaki Oizumi, Isa Nishiyama, Shinji Okazaki

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.562365

KEYWORDS: Mirrors, Wavefronts, Projection systems, Spatial frequencies, Semiconducting wafers, Polishing, Extreme ultraviolet lithography, Photomasks, Mirror mounts, Reflectivity

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Proceedings Article | 16 June 2003 Paper

Paper

Development of illumination optics and projection optics for high-NA EUV exposure tool (HiNA)

Tetsuya Oshino, Masayuki Shiraishi, Noriaki Kandaka, Katsumi Sugisaki, Hiroyuki Kondo, Kazuya Ota, K. Mashima, Katsuhiko Murakami, Hiroaki Oizumi, Iwao Nishiyama, Shinji Okazaki

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.484936

KEYWORDS: Mirrors, Projection systems, Wavefronts, Extreme ultraviolet lithography, Spherical lenses, Metals, Mirror mounts, Optical components, Lithographic illumination, Photography

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Proceedings Article | 24 August 2001 Paper

Paper

Control of line edge roughness of ultrathin resist films subjected to EUV exposure

Manhyoung Ryoo, Shigeru Shirayone, Hiroaki Oizumi, Nobuyuki Matsuzawa, Shigeo Irie, Ei Yano, Shinji Okazaki

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436814

KEYWORDS: Line edge roughness, Extreme ultraviolet lithography, Thin films, Lithography, Extreme ultraviolet, Atomic force microscopy, Scanning electron microscopy, Critical dimension metrology, Atomic force microscope, Image processing

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Proceedings Article | 11 June 1999 Paper

Paper

Microswelling-free negative resists for ArF excimer laser lithography utilizing acid-catalyzed intramolecular esterification

Takashi Hattori, Yuko Tsuchiya, Yoshiyuki Yokoyama, Hiroaki Oizumi, Taku Morisawa, Atsuko Yamaguchi, Hiroshi Shiraishi

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350223

KEYWORDS: Polymers, Excimer lasers, Distortion, Lithography, Absorption, Resistance, Etching, Transparency, Resolution enhancement technologies, Infrared spectroscopy

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Showing 5 of 38 publications

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