The 3ω method has proven very useful for determining the thermal conductivity of the film and the substrate. According to the principle of 3ω method, a thermal conductivity test platform was built and the SiO2 film was measurement to verify the accuracy of experimental system. In this work, the different thicknesses of SiN films were grown by PECVD and the thermal conductivity was measured by 3ω method. In order to improve the accuracy of the thermal conductivity measurement, the influence of film-substrate interfacial thermal resistance was introduced into the heat transfer model. The experimental results show that the thermal conductivity of SiN films increases with increasing thickness, and the correction thermal conductivity is obviously higher than the original value.
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