Ms. Indika Seneviranthna Matara Kankanamge Profile

Indika Seneviranthna Matara Kankanamge

at Georgia State Univ

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Author

Publications (6)

Proceedings Article | 2 November 2016 Presentation

Infrared nanoscopy of In-rich InGaN epilayers (Conference Presentation)

Daniel Seidlitz, Alireza Fali, Indika Matara Kankanamge, Dorian Alden, Ramon Collazo, Axel Hoffmann, Nikolaus Dietz, Yohannes Abate

Proceedings Volume 9954, 995408 (2016) https://doi.org/10.1117/12.2238043

KEYWORDS: Indium gallium nitride, Infrared radiation, Near field scanning optical microscopy, Dielectrics, Near field optics, Heterojunctions, Infrared imaging, Spectroscopy, Imaging spectroscopy, Super resolution microscopy

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Proceedings Article | 7 September 2016 Paper

Effect of AlN buffer layers on the structural and optoelectronic properties of InN/AlN/Sapphire heterostructures grown by MEPA-MOCVD

Indika M. K., Daniel Seidlitz, Alireza Fali, Brendan Cross, Yohannes Abate, Nikolaus Dietz

Proceedings Volume 9954, 99540R (2016) https://doi.org/10.1117/12.2237957

KEYWORDS: Plasma, Optoelectronics, FT-IR spectroscopy, Indium nitride, Aluminum nitride, Sapphire, Nitrogen, Raman spectroscopy, Atomic force microscopy, Dielectrics

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Proceedings Article | 8 September 2015 Paper

Optoelectronic and structural properties of InGaN nanostructures grown by plasma-assisted MOCVD

Daniel Seidlitz, M. K. Senevirathna, Y. Abate, A. Hoffmann, N. Dietz

Proceedings Volume 9571, 95710P (2015) https://doi.org/10.1117/12.2188612

KEYWORDS: Plasma, Indium nitride, Indium gallium nitride, Raman spectroscopy, Nitrogen, FT-IR spectroscopy, Molybdenum, Optoelectronics, Near field scanning optical microscopy, Dielectrics

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Proceedings Article | 15 October 2012 Paper

Effect of V/III molar ratio on the structural and optical properties of InN epilayers grown by HPCVD

Ramazan Atalay, Max Buegler, Sampath Gamage, M. K. Senevirathna, Bahadir Küçükgök, Andrew Melton, Axel Hoffmann, A. G. Unil Perera, Ian Ferguson, Nikolaus Dietz

Proceedings Volume 8484, 84840X (2012) https://doi.org/10.1117/12.930199

KEYWORDS: Indium nitride, Raman spectroscopy, Phonons, FT-IR spectroscopy, Infrared spectroscopy, Optoelectronics, Crystals, X-ray diffraction, Reflectance spectroscopy, Spectroscopy

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Proceedings Article | 15 October 2012 Paper

Effect of nucleation period on the physical properties of InN epilayers

S. Gamage, M. K. Senevirathna, R. Atalay, A. G. Perera, A. Melton, I. Ferguson, N. Dietz

Proceedings Volume 8484, 84841I (2012) https://doi.org/10.1117/12.930363

KEYWORDS: Indium nitride, Raman spectroscopy, Spectroscopy, Dielectrics, X-ray diffraction, FT-IR spectroscopy, Optoelectronics, Reflectance spectroscopy, Chemical vapor deposition, Nitrogen

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Proceedings Article | 18 August 2010 Paper

Reactor pressure: growth temperature relation for InN epilayers grown by high-pressure CVD

M. Buegler, S. Gamage, R. Atalay, J. Wang, I. Senevirathna, R. Kirste, T. Xu, M. Jamil, I. Ferguson, J. Tweedie, R. Collazo, A. Hoffmann, Z. Sitar, N. Dietz

Proceedings Volume 7784, 77840F (2010) https://doi.org/10.1117/12.860952

KEYWORDS: Indium nitride, Chemical vapor deposition, Raman spectroscopy, Crystals, Infrared spectroscopy, Indium, Heterojunctions, Gallium nitride, Nitrogen, Sapphire

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Showing 5 of 6 publications

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