We propose a robust dynamic spectroscopic imaging ellipsometer (DSIE) as a future high-throughput full pattern wafer inspection candidate in semiconductor MI fields. In this study, we demonstrate a Linnik-type monolithic polarizing interferometer scheme combined with a simple spectrometer-based compensation channel can enhance system robustness and stability drastically. Also, we address the importance of the global mapping phase error compensation method by which highly reliable 3-D cubic spectroscopic ellipsometric parameter mapping capability can be provided for a large-scale specimen. To show the efficacy of the proposed compensation method experimentally, we measure a 12-inch full size silicone-dioxide thin film and a 8-inch nano-pattern wafer in a general environment where various external disturbances can affect the system stability.
The accurate measurement of the thickness profile, particularly in the presence of non-uniform thin films deposited on substrates with warpage, is a crucial aspect of various applications spatially, in the overlay process of the semiconductor industry. The conventional method of Fizeau interferometer-based shape and geometry measurement has limitations in nanometer-level accurate volumetric profile measurement when non-uniform and complex thin films are deposited upon a warped Si substrate. Spectroscopic ellipsometry can be the best candidate for ultra-thin film volumetric thickness profile metrology rather than spectral reflectometry. But current spectral ellipsometry is time consuming. To address these challenges, our research group has made significant advancements in the field of spectroscopic imaging ellipsometry by developing dynamic spectroscopic imaging ellipsometry (DSIE). In this study, we describe a dynamic ultra-thin film thickness line-profile measurement method by adding a Mach-Zehnder interferometer module to a dynamic spectroscopic imaging ellipsometer. The proposed system can provide nanometer-level ultra-thin film thickness line-profile and the warped surface profile information of a Si substrate simultaneously.
This paper describes the lateral resolution enhancement of dynamic spectroscopic imaging ellipsometer, aiming to improve its inspection capabilities. Traditional imaging ellipsometers use a rotating optical elements type scheme which typically requires longer acquisition time. Moreover, for spectroscopic applications, an extra spectral scanning mechanism is needed. The proposed system based on a one-piece polarizing interferometric module, can efficiently extract spatio-spectral ellipsometric phase maps of two-dimensional (2D) materials with a spatial resolution of a few microns at a speed of hundreds of Hz.
We describe a dynamic spectroscopic imaging ellipsometer employing a monolithic polarizing interferometer. It measures a spatio-spectral ellipsometric phase data Δ(λ,x) dynamically with a measurement speed of around 30Hz which enables us to measure a highly precise spectroscopic ellipsometric mapping data Δ(λ,x,y) for 10mm x 10mm area in a few tens of seconds with a high spatial resolution of tens of microns. The proposed system can provide ultrafast spectroscopic ellipsometric inspection capability for various semiconductor manufacturing applications.
This paper describes a new approach for large-scale thin film thickness mapping based on dynamic spectroscopic
ellipsometry. The proposed system can provide a real time thin film uniformity measurement capability with high
precision. We expect the proposed scheme can be applied for various large-scale thin film deposition process applications
such as roll to roll manufacturing where real time process uniformity monitoring becomes crucial.
We describe a dynamic spectral ellipsometric Direct filtering phase extraction method based on a monolithic polarizing Michelson interferometry scheme. The proposed dynamic phase extraction method is three times faster and it can evaluate a spectrally resolved ellipsometric phase Δ(k) with utmost the same level of precision and accuracy compared to Fourier Transform method. The performance of the proposed dynamic spectral ellipsometric phase extraction method is demonstrated by using a SiO2 thin film with a nominal thickness of 500 nm deposited on Si bare wafer.
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