Mr. Isao Yonekura Profile

Isao Yonekura

Research Leader at Toppan Printing

SPIE Involvement:

Author

Publications (15)

Proceedings Article | 28 June 2013 Paper

A study of phase defect measurement on EUV mask by multiple detectors CD-SEM

Isao Yonekura, Hidemitsu Hakii, Shinya Morisaki, Tsutomu Murakawa, Soichi Shida, Masayuki Kuribara, Toshimichi Iwai, Jun Matsumoto, Takayuki Nakamura

Proceedings Volume 8701, 870110 (2013) https://doi.org/10.1117/12.2031846

KEYWORDS: 3D metrology, Sensors, 3D image processing, Atomic force microscopy, 3D vision, 3D acquisition, Extreme ultraviolet, Scanning electron microscopy, Phase measurement, Electron beams

Read Abstract +

Proceedings Article | 30 June 2012 Paper

CD-Metrology of EUV masks in the presence of charging: measurement and simulation

Sergey Babin, Sergey Borisov, Hidemitsu Hakii, Yasushi Nishiyama, Isao Yonekura

Proceedings Volume 8441, 844108 (2012) https://doi.org/10.1117/12.999462

KEYWORDS: Monte Carlo methods, Extreme ultraviolet, Scanning electron microscopy, Photomasks, Sensors, Metrology, Oxides, Signal detection, Multilayers, Electron beams

Read Abstract +

Proceedings Article | 14 October 2011 Paper

Addressing 3D metrology challenges by using a multiple detector CDSEM

Mitsuo Hiroyama, Tsutomu Murakawa, Masayuki Kuribara, Toshimichi Iwai, Minoru Soma, Ikuo Iko, Masahiro Seyama, Jun Matsumoto, Takayuki Nakamura, Hidemitsu Hakii, Isao Yonekura, Masashi Kawashita, Yasushi Nishiyama, Keishi Tanaka, Kenji Komoto

Proceedings Volume 8166, 81661R (2011) https://doi.org/10.1117/12.896982

KEYWORDS: Sensors, Signal detection, 3D metrology, Photomasks, Atomic force microscopy, Lithography, Scanning electron microscopy, Image sensors, Edge detection, Extreme ultraviolet

Read Abstract +

Proceedings Article | 19 May 2011 Paper

New CD-SEM metrology method for the side wall angle measurement using multiple detectors

Hiroshi Fukaya, Tsutomu Murakawa, Soichi Shida, Masayuki Kuribara, Toshimichi Iwai, Jun Matsumoto, Takayuki Nakamura, Hidemitsu Hakii, Isao Yonekura, Masashi Kawashita, Yasushi Nishiyama, Keishi Tanaka, Yasutaka Kikuchi

Proceedings Volume 8081, 80810G (2011) https://doi.org/10.1117/12.899368

KEYWORDS: Sensors, Signal detection, Photomasks, Algorithm development, 3D metrology, Polonium, Metrology, Scanning electron microscopy, Electron beams, Detection and tracking algorithms

Read Abstract +

Proceedings Article | 20 April 2011 Paper

Influence of the charging effect on the precision of measuring EUV mask features

Yasushi Nishiyama, Hidemitsu Hakii, Isao Yonekura, Keishi Tanaka, Yasutaka Kikuchi

Proceedings Volume 7971, 79710C (2011) https://doi.org/10.1117/12.878728

KEYWORDS: Electrons, Extreme ultraviolet, Silica, Monte Carlo methods, Photomasks, Tantalum, Scanning electron microscopy, Critical dimension metrology, Multilayers, Scattering

Read Abstract +

Proceedings Article | 20 April 2011 Paper

Study of the three-dimensional shape measurement for mask patterns using Multiple Detector CD-SEM

Isao Yonekura, Hidemitsu Hakii, Masashi Kawashita, Yasushi Nishiyama, Keishi Tanaka, Yasutaka Kikuchi, Tsutomu Murakawa, Soichi Shida, Masayuki Kuribara, Toshimichi Iwai, Jun Matsumoto, Takayuki Nakamura

Proceedings Volume 7971, 797121 (2011) https://doi.org/10.1117/12.879400

KEYWORDS: Sensors, Atomic force microscopy, Signal detection, Photomasks, Etching, 3D metrology, Tantalum, Critical dimension metrology, Scanning electron microscopy, Extreme ultraviolet

Read Abstract +

Proceedings Article | 2 April 2010 Paper

Comparison of different algorithms to determine areas from SEM images

K.-P. Johnsen, C. Frase, H. Bosse, I. Yonekura, M. Higuchi, J. Richter

Proceedings Volume 7638, 76382Q (2010) https://doi.org/10.1117/12.846536

KEYWORDS: Scanning electron microscopy, Monte Carlo methods, Edge detection, Detection and tracking algorithms, Image processing, Photomasks, Image filtering, Algorithm development, Printing, 3D image processing

Read Abstract +

We present a comparison of different methods to extract area information from images. Two different physical-based algorithms were tested which determine the areas of arbitrarily shaped 3D nano-structures on wafers or photo-masks (e.g. contact holes) using secondary electron images of scanning electron microscopy (SEM). One of these algorithms, called NANOAREA, was developed by the PTB. The other one is the software package MaskEXPRESS, which was developed by Toppan Printing Co., Ltd. In addition to real SEM images we used Monte Carlo generated SEM images of contact holes of different shapes and sizes. For this, the Monte Carlo simulation program MCSEM, developed at PTB, was applied. MCSEM simulates the electron diffusion and secondary electron generation and transport in solid state material and provides simulated SEM images of arbitrary 3D specimen structures. NANOAREA uses basic image processing routines to estimate the edge position of a structure. Then, one-dimensional profiles which intersect the structure boundary perpendicularly are extracted. A one-dimensional edge detection algorithm determines the edge position on each profile. Finally these detected edge positions are used to calculate the polygon area using the triangle method. NANOAREA showed a very small underestimation of the area of about 0.3 % with regard to the Monte Carlo simulations (i.e. sub-pixel deviation). MaskEXPRESS has a similar approach, however employs a different edge detection algorithm. For quadratic contact holes a very high correlation coefficient r larger than 0.99 of the CDs was seen with an offset of about 0.3 nm for the two tested programs. Here the critical dimension (CD) is defined as the square root of the area. The deviations from the mean offset were smaller than 1 nm over the whole investigated range. For analysis of arbitrarily shaped features we used a double T-shaped structure. Also here almost perfect correlation was found (r = 0.98). The observed mean offset in this case was also about 0.3 nm. The offsets depend on the length of the edge and can vary with the shape of the structure, too. Here we report the excellent correlation of the investigated algorithms and programs to determine area parameters from SEM images. The results found are an important prerequisite for harmonized area measurement based on independent algorithms and pave the way to a standardized approach to area determination and reporting of photomask structures.

Proceedings Article | 23 September 2009 Paper

A study of contour image comparison measurement for photomask patterns of 32 nm and beyond

Isao Yonekura, Hidemitsu Hakii, Keishi Tanaka, Masaru Higuchi, Yoshiaki Ogiso, Toshihide Oba, Toshimichi Iwai, Jun Matsumoto, Takayuki Nakamura

Proceedings Volume 7488, 748831 (2009) https://doi.org/10.1117/12.833405

KEYWORDS: Photomasks, Distance measurement, Scanning electron microscopy, Cadmium, Critical dimension metrology, Image enhancement, Printing, Semiconducting wafers, Reticles, Software development

Read Abstract +

Proceedings Article | 11 May 2009 Paper

An evaluation of a new side-wall-angle measurement technique for mask patterns by CD-SEM

Hidemitsu Hakii, Isao Yonekura, Masashi Kawashita, Yosuke Kojima, Yoshifumi Sakamoto, Keishi Tanaka

Proceedings Volume 7379, 737922 (2009) https://doi.org/10.1117/12.824280

KEYWORDS: Photomasks, Extreme ultraviolet, Scanning electron microscopy, Metrology, Pixel resolution, Time metrology, 3D metrology, Scatterometry, Electron beams, Reflectivity

Read Abstract +

Proceedings Article | 17 October 2008 Paper

Exploring new metrology for complex photomask patterns

Masaru Higuchi, Tatsuya Aihara, Hideaki Saito, Isao Yonekura, Jotaro Suzuki, Emily Gallagher, Ian Stobert

Proceedings Volume 7122, 71222S (2008) https://doi.org/10.1117/12.801994

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Metrology, Scanning electron microscopy, Optical proximity correction, Lithography, Opacity, Printing, Double patterning technology

Read Abstract +

Proceedings Article | 30 October 2007 Paper

A study of precision performance and scan damage of EUV masks with the LWM9000 SEM

Isao Yonekura, Hidemitsu Hakii, Takashi Yoshii, Yoshiyuki Negishi, Katsumi Oohira, Koichirou Kanayama, Masashi Kawashita, Yo Sakata, Keishi Tanaka

Proceedings Volume 6730, 67305H (2007) https://doi.org/10.1117/12.746373

KEYWORDS: Extreme ultraviolet, Scanning electron microscopy, Reflectivity, Chromium, Time metrology, Ozone, Precision measurement, Metrology, Image analysis, Electron beams

Read Abstract +

Proceedings Article | 23 March 2006 Paper

Resolution improvement of EPL stencil mask using thin membrane

Hiroshi Sugimura, Hideyuki Eguchi, Masashi Norimoto, Yoshiyuki Negishi, Isao Yonekura, Kojiro Ito, Akira Tamura, Fumihiro Koba, Hiroshi Arimoto

Proceedings Volume 6151, 61511F (2006) https://doi.org/10.1117/12.655425

KEYWORDS: Photomasks, Reactive ion etching, Etching, Semiconducting wafers, Scattering, Mask making, Electron beam lithography, Silicon, Image resolution, Optical lithography

Read Abstract +

Proceedings Article | 28 June 2005 Paper

Defect inspection strategy of LEEPL masks

Isao Yonekura, Shinji Kunitani, Takashi Susa, Kojiro Itoh, Akira Tamura, Satoru Maruyama

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617292

KEYWORDS: Photomasks, Semiconducting wafers, Charged-particle lithography, Inspection, Defect inspection, Printing, Defect detection, Scanning electron microscopy, Image quality, Electron beams

Read Abstract +

Proceedings Article | 5 September 2001 Paper

Pattern shape analysis tool for quantitative estimate of photomask and process

Isao Yonekura, Yuhichi Fukushima, Fuyuhiko Matsuo, Masao Otaki, Norihito Fukugami

Proceedings Volume 4409, (2001) https://doi.org/10.1117/12.438360

KEYWORDS: Photomasks, Image processing, Scanning electron microscopy, Shape analysis, Image filtering, Etching, Ultraviolet radiation, Semiconducting wafers, Microscopes, Inspection

Read Abstract +

Proceedings Article | 19 July 2000 Paper

Pattern shape analysis tool for defect judgement of photomask

Fuyuhiko Matsuo, Masao Otaki, Norihito Fukugami, Isao Yonekura, Yuhichi Fukushima

Proceedings Volume 4066, (2000) https://doi.org/10.1117/12.392036

KEYWORDS: Optical proximity correction, Head, Inspection, Image quality, Scanning electron microscopy, Photomasks, Shape analysis, Image processing, Semiconducting wafers, Image resolution

Read Abstract +

Showing 5 of 15 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years