Dr. Jae-Hyun Ryou Profile

Dr. Jae-Hyun Ryou

Senior Research Engineer at Georgia Institute of Technology

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Publications (7)

Proceedings Article | 4 March 2013 Paper

Room-temperature optically pumped AlGaN-AlN multiple-quantum-well lasers operating at <260nm grown by metalorganic chemical vapor deposition

Zachary Lochner, Tsung-Ting Kao, Yuh-Shiuan Liu, Xiao-Hang Li, Md. Mahbub Satter, Shyh-Chiang Shen, P. Douglas Yoder, Jae-Hyun Ryou, Russell Dupuis, Yong Wei, Hongen Xie, Alec Fischer, Fernando Ponce

Proceedings Volume 8625, 862519 (2013) https://doi.org/10.1117/12.2008830

KEYWORDS: Aluminum nitride, Optical pumping, Metalorganic chemical vapor deposition, Sapphire, Polarization, Laser optics, Deep ultraviolet, Silicon carbide, Semiconductor lasers, Laser damage threshold

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Proceedings Article | 23 May 2012 Paper

Development of small unit cell avalanche photodiodes for UV imaging applications

Ashok Sood, Roger Welser, Robert Richwine, Yash Puri, Russell Dupuis, Jae-Hyun Ryou, Nibir Dhar, P. Suvarna, F. Shahedipour-Sandvik

Proceedings Volume 8375, 83750R (2012) https://doi.org/10.1117/12.923182

KEYWORDS: Avalanche photodetectors, Ultraviolet radiation, Gallium nitride, Signal to noise ratio, Pulsed laser operation, Sensors, Atmospheric modeling, Target detection, Image resolution, Ultraviolet detectors

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SPIE Journal Paper | 6 April 2012 Open Access

Publisher's Note: Growth and characterization of In_xGa₁−xN alloys by metalorganic chemical vapor deposition for solar cell applications

Yong Huang, Jae-Hyun Ryou, Russell Dupuis, Andrew Melton, Muhammad Jamil, Ian Ferguson, Balakrishnam Jampana

JPE, Vol. 2, Issue 1, 020101, (April 2012) https://doi.org/10.1117/12.10.1117/1.JPE.2.020101

KEYWORDS: Metalorganic chemical vapor deposition, Solar cells, Gallium, Computer engineering, Materials science, Indium, Compound semiconductors, Data processing

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Proceedings Article | 31 August 2010 Paper

Development of GaN/AlGaN APDs for UV imaging applications

Ashok Sood, Robert Richwine, Yash Puri, Russell Dupuis, Jae-Hyun Ryou, Nibir Dhar, Raymond Balcerak

Proceedings Volume 7780, 77800E (2010) https://doi.org/10.1117/12.866361

KEYWORDS: Ultraviolet radiation, Avalanche photodetectors, Signal to noise ratio, Pulsed laser operation, Interference (communication), Sensors, Target detection, Gallium nitride, Electrons, Image resolution

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Proceedings Article | 18 March 2010 Paper

Performance improvement of InGaN-based laser diodes by epitaxial layer structure design

Jianping Liu, Yun Zhang, Zachary Lochner, Seong-soo Kim, Hyunsoo Kim, Jae-Hyun Ryou, Shyh-Chiang Shen, P. Doug Yoder, Russell Dupuis, Qiyuan Wei, Kewei Sun, Alec Fischer, Fernando Ponce

Proceedings Volume 7602, 760219 (2010) https://doi.org/10.1117/12.842334

KEYWORDS: Waveguides, Gallium nitride, Indium gallium nitride, Semiconductor lasers, Electroluminescence, Sapphire, Electron beam lithography, Quantum wells, Cladding, Structural design

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Proceedings Article | 15 February 2008 Paper

InGaN MQW green LEDs using p-InGaN and p-InGaN/p-GaN superlattices as p-type layers

Russell Dupuis, Jae Limb, Jianping Liu, Jae-Hyun Ryou, Clarissa Horne, Dongwon Yoo

Proceedings Volume 6894, 68941D (2008) https://doi.org/10.1117/12.766915

KEYWORDS: Green light emitting diodes, Light emitting diodes, Indium gallium nitride, Indium, Gallium, Superlattices, Electroluminescence, Gallium nitride, Quantum wells, Laser sintering

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Proceedings Article | 7 November 2007 Paper

High-performance GaN and AlxGa1-xN ultraviolet avalanche photodiodes grown by MOCVD on bulk III-N substrates

Russell Dupuis, Jae-Hyun Ryou, Dongwon Yoo, J. B. Limb, Yun Zhang, Shyh-Chiang Shen, Douglas Yoder

Proceedings Volume 6739, 67391B (2007) https://doi.org/10.1117/12.738505

KEYWORDS: Gallium nitride, Aluminum, Avalanche photodetectors, Gallium, Ultraviolet radiation, Aluminum nitride, Absorption, Metalorganic chemical vapor deposition, Ultraviolet detectors, Sapphire

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Showing 5 of 7 publications

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