Dr. Jagmohan Bajaj Profile

Dr. Jagmohan Bajaj

Advisor to the Director

SPIE Involvement:

Author

Publications (27)

Proceedings Article | 30 May 2022 Presentation

Study of temperature dependent carrier transport in Ga free T2SL photodetectors and its impact on performance

Enrico Bellotti, Francesco Bertazzi, Alberto Tibaldi, Jonathan Schuster, Jagmohan Bajaj, Meredith Reed

Proceedings Volume 12107, 121070S (2022) https://doi.org/10.1117/12.2634364

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We have performed a numerical study of the carrier transport properties in gallium-free strained-balanced InAs/InxAs1-xSb type-II superlattices (T2SL) intended for infrared detector applications. The motivation was to understand whether the performance of T2SL detectors is ultimately limited by fundamental or technological processes. We have employed a rigorous one-dimensional quantum mechanical transport model based on the non-equilibrium Green's function (NEGF) formalism that includes a k.p description of the electronic structure. This approach has allowed us to avoid making any a priori assumptions on the physical mechanism (tunneling, sequential tunneling or hopping) dominating the transport. We find that regardless of its nature and cause, the presence of positional and compositional disorder, introduced inherently during materials growth by layer thickness fluctuations, nonuniform antimony composition and segregation throughout the superlattice stack, significantly affects the vertical carrier transport properties. In particular, the minority carrier hole mobility is fundamentally limited by the nonideal disorder. Furthermore, upon reducing the temperature, holes become fully localized and transport occurs by hopping, which explains published measured photodetector data that demonstrates the quantum efficiency exhibiting a very strong temperature dependence that degrades as the temperature is reduced. We also found that the minority carrier electron mobility is largely unaffected by disorder, indicating the p-type absorbing layer as the preferred option. We have also performed simulations of typical nBn detectors with a simplified NEGF model based on the effective mass approximation and Büttiker-probe self-energies, which also allows us to explore the possibilities offered by quantum-corrected drift-diffusion approaches. We will present simulation examples of representative gallium-containing and gallium-free nBn structures intended for MWIR and LWIR photodetector applications. These examples will include calculations of I-V characteristics, SRH recombination rates and quantum efficiency.

Proceedings Article | 26 January 2018 Open Access

Understanding fundamental limitations of materials to enable advanced design

Meredith Reed, Jagmohan Bajaj, Francesco Bertazzi, Enrico Bellotti, Jonathan Schuster, Philip Perconti

Proceedings Volume 10540, 1054005 (2018) https://doi.org/10.1117/12.2300711

KEYWORDS: Instrument modeling, Superlattices, Semiconductors, Mercury cadmium telluride, Semiconductor materials, Long wavelength infrared, Scattering, Staring arrays, Light scattering, Measurement devices

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Proceedings Article | 30 January 2017 Open Access

Accelerating technology innovations by early understanding of fundamental and technology limitations of material synthesis and device operation

Jagmohan Bajaj, Roger DeWames, Jonathan Schuster, Meredith Reed, Philip Perconti, Enrico Bellotti

Proceedings Volume 10111, 1011117 (2017) https://doi.org/10.1117/12.2261308

KEYWORDS: Laser sintering, Semiconductors, Instrument modeling, Infrared sensors, Long wavelength infrared, Sensors, Stereolithography, Mercury cadmium telluride, Semiconductor materials, Infrared technology

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Timely technology transition with minimal risk requires an understanding of fundamental and technology limitations of material synthesis, device operation and design controllable parameters. However, this knowledge-based approach requires substantial investment of resources in the Science and Technology (ST) stage of development. For low volume niche semiconductor technologies of Department of Defense (DoD) relevance, there is little drive for industry to expend their limited resources towards basic research simply because there is no significant return on investment. As a result, technology transition from ST to product development is often delayed, expensive and carries risks. The Army Research Laboratory (ARL) is addressing this problem by establishing a Center for Semiconductor Modeling of Materials and Devices (CSM) that brings together government, academia, and industry in a collaborative fashion to address research opportunities through its Open Campus initiative. This Center leverages combined core competencies of partner organizations, which include a broad knowledge base in modeling, and its validation; sharing of computational, characterization, materials growth and device processing resources; project continuity; and ‘extension of the bench’ via exchange of researchers between affiliated entities. A critical DoD technology is sensing in the infrared (IR) spectrum, where understanding of materials, devices and methods for sensing and processing IR information must continually improve to maintain superiority in combat. In this paper we focus on the historical evolution of IR technology and emphasize the need for understanding of material properties and device operation to accelerate innovation and shorten the cycle time, thereby ensuring timely transition of technology to product development and manufacturing. There are currently two competing IR technologies being pursued, namely the incumbent II-VI Hg₁- _xCd_xTe technology and the III-V Type 2 Superlattices (SLs) technology. A goal of the CSM is to develop physics based models for Type 2 SLs with the capability to timely understand the knowledge gap between what is built and what is designed.

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Proceedings Article | 26 September 2016 Paper

Center for Semiconductor Materials and Device Modeling: expanding collaborative research opportunities between government, academia, and industry

Philip Perconti, Sarah Bedair, Jagmohan Bajaj, Jonathan Schuster, Meredith Reed

Proceedings Volume 9933, 993308 (2016) https://doi.org/10.1117/12.2240312

KEYWORDS: Instrument modeling, Semiconductor materials, Semiconductors, Sensors, Modulation transfer functions, 3D modeling, Laser sintering, Diffusion, Infrared sensors, Computer simulations

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Proceedings Article | 13 February 2016 Open Access

Sensors, nano-electronics and photonics for the Army of 2030 and beyond

Philip Perconti, W. C. Alberts, Jagmohan Bajaj, Jonathan Schuster, Meredith Reed

Proceedings Volume 9755, 975506 (2016) https://doi.org/10.1117/12.2217797

KEYWORDS: Sensors, Nanoelectronics, Photonics, Infrared sensors, Imaging spectroscopy, Infrared photography, Infrared radiation, Electronics, Situational awareness sensors, Instrument modeling, Semiconductor materials, 3D modeling, Semiconductors, Performance modeling, Quantum efficiency

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Proceedings Article | 7 May 2009 Paper

HgCdTe at Teledyne

W. Tennant, J. Arias, J. Bajaj

Proceedings Volume 7298, 72982V (2009) https://doi.org/10.1117/12.821350

KEYWORDS: Mercury cadmium telluride, Liquid phase epitaxy, Sensors, Diodes, Mid-IR, Metalorganic chemical vapor deposition, Silicon, Doping, Semiconducting wafers, Short wave infrared radiation

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Proceedings Article | 16 July 2008 Paper

Teledyne Imaging Sensors: silicon CMOS imaging technologies for x-ray, UV, visible, and near infrared

Yibin Bai, Jagmohan Bajaj, James Beletic, Mark Farris, Atul Joshi, Stefan Lauxtermann, Anders Petersen, George Williams

Proceedings Volume 7021, 702102 (2008) https://doi.org/10.1117/12.792316

KEYWORDS: Silicon, Sensors, Quantum efficiency, X-rays, CMOS sensors, Astronomy, Optical sensors, Imaging systems, Readout integrated circuits, Near infrared

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Proceedings Article | 8 June 2007 Paper

Comparison of type-II superlattice and HgCdTe infrared detector technologies

Jagmohan Bajaj, Gerry Sullivan, Don Lee, Ed Aifer, Manijeh Razeghi

Proceedings Volume 6542, 65420B (2007) https://doi.org/10.1117/12.723849

KEYWORDS: Sensors, Mercury cadmium telluride, Laser sintering, Superlattices, Staring arrays, Quantum efficiency, Infrared detectors, Sensor performance, Long wavelength infrared, Detector arrays

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Proceedings Article | 25 August 2005 Paper

Recent progress of hybrid CMOS visible focal plane array technology

Y. Bai, M. Farris, A. Joshi, J. Hosack, J. Bajaj, J. Montroy

Proceedings Volume 5902, 59020G (2005) https://doi.org/10.1117/12.637399

KEYWORDS: Silicon, Sensors, Staring arrays, Quantum efficiency, Imaging systems, CMOS technology, Charge-coupled devices, Detector arrays, Temperature metrology, Readout integrated circuits

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Proceedings Article | 30 August 2004 Paper

Device analysis of MBE HgCdTe p-on-n photovoltaic detectors in 5- to 15-µm wavelength range

Priyalal Wijewarnasuriya, Nibir Dhar, Arvind D'Souza, Maryn Stapelbroek, Dennis Edwall, Jose Arias, Jagmohan Bajaj

Proceedings Volume 5406, (2004) https://doi.org/10.1117/12.540997

KEYWORDS: Sensors, Diffusion, Quantum efficiency, Photovoltaic detectors, Temperature metrology, Cadmium, Mercury cadmium telluride, Mercury, Mid-IR, Sensor performance

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Proceedings Article | 12 January 2004 Paper

Hybrid CMOS focal plane array with extended UV and NIR response for space applications

Yibin Bai, Steve Bernd, Joseph Hosack, Mark Farris, John Montroy, Jagmohan Bajaj

Proceedings Volume 5167, (2004) https://doi.org/10.1117/12.508446

KEYWORDS: Silicon, Sensors, Staring arrays, Quantum efficiency, Charge-coupled devices, CMOS sensors, Near infrared, Detector arrays, Ultraviolet radiation, Imaging systems

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Proceedings Article | 5 August 2002 Paper

Advanced imaging sensors at Rockwell Scientific Company

John Montroy, James Garnett, Scott Cabelli, Markus Loose, Atul Joshi, Gary Hughes, Lester Kozlowski, Allan Haas, Selmer Wong, Majid Zandian, Annie Chen, John Pasko, Mark Farris, Craig Cabelli, Donald Cooper, Jose Arias, Jagmohan Bajaj, Kadri Vural

Proceedings Volume 4721, (2002) https://doi.org/10.1117/12.478849

KEYWORDS: Sensors, Mercury cadmium telluride, Mid-IR, Optical sensors, Cameras, Imaging systems, Quantum efficiency, CMOS sensors, Image resolution, Infrared radiation

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Proceedings Article | 12 November 2001 Paper

Advances in large-area Hg1-xCdxTe photovoltaic detectors for remote sensing applications

Priyalal Wijewarnasuriya, Majid Zandian, Jamie Phillips, Dennis Edwall, Roger DeWames, Gernot Hildebrandt, Jagmohan Bajaj, Jose Arias, Arvind D'Souza, Fergus Moore

Proceedings Volume 4454, (2001) https://doi.org/10.1117/12.448180

KEYWORDS: Sensors, Quantum efficiency, Long wavelength infrared, Short wave infrared radiation, Mid-IR, Mercury cadmium telluride, Semiconducting wafers, Photovoltaic detectors, Diffusion, Photovoltaics

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Proceedings Article | 10 October 2001 Paper

Cross-track infrared sounder FPA performance

Arvind D'Souza, Larry Dawson, Stacy Marsh, Richard Willis, Priyalal Wijewarnasuriya, Roger DeWames, Jose Arias, Jagmohan Bajaj, Gernot Hildebrandt, Fergus Moore

Proceedings Volume 4369, (2001) https://doi.org/10.1117/12.445336

KEYWORDS: Sensors, Staring arrays, Mid-IR, Long wavelength infrared, Quantum efficiency, Short wave infrared radiation, Infrared radiation, Photovoltaics, Amplifiers, Photovoltaic detectors

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Proceedings Article | 13 April 2000 Paper

State-of-the-art HgCdTe infrared devices

Jagmohan Bajaj

Proceedings Volume 3948, (2000) https://doi.org/10.1117/12.382141

KEYWORDS: Mercury cadmium telluride, Staring arrays, Sensors, Silicon, Readout integrated circuits, Infrared radiation, Mid-IR, Detector arrays, Quantum efficiency, Short wave infrared radiation

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Proceedings Article | 26 July 1999 Paper

HgCdTe detectors and FPAs for remote sensing applications

Arvind D'Souza, Larry Dawson, Dan Berger, Stewart Clark, Priyalal Wijewarnasuriya, Jagmohan Bajaj, Jose Arias, William Tennant, Lester Kozlowski, Kadri Vural

Proceedings Volume 3698, (1999) https://doi.org/10.1117/12.354499

KEYWORDS: Sensors, Mercury cadmium telluride, Staring arrays, Detector arrays, Remote sensing, Readout integrated circuits, Short wave infrared radiation, Long wavelength infrared, Mid-IR, Custom fabrication

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Proceedings Article | 26 July 1999 Paper

2048x2048 HgCdTe focal plane arrays for astronomy applications

Kadri Vural, Lester Kozlowski, Donald Cooper, C. Chen, Gary Bostrup, Craig Cabelli, Jose Arias, Jagmohan Bajaj, Klaus-Werner Hodapp, Donald Hall, William Kleinhans, G. Price, J. Pinter

Proceedings Volume 3698, (1999) https://doi.org/10.1117/12.354532

KEYWORDS: Sensors, Staring arrays, Clocks, Multiplexers, Field effect transistors, Mercury cadmium telluride, Semiconducting wafers, Short wave infrared radiation, Astronomy, Mid-IR

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Proceedings Article | 21 December 1998 Paper

HgCdTe multispectral infrared FPAs for remote sensing applications

Arvind D'Souza, Larry Dawson, Dan Berger, Arvel Markum, Jagmohan Bajaj, William Tennant, Jose Arias, Lester Kozlowski, Kadri Vural, Priyalal Wijewarnasuriya

Proceedings Volume 3498, (1998) https://doi.org/10.1117/12.333630

KEYWORDS: Mercury cadmium telluride, Sensors, Staring arrays, Mid-IR, Detector arrays, Short wave infrared radiation, Readout integrated circuits, Infrared sensors, Infrared imaging, Infrared radiation

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Infrared (IR) remote sensing imaging applications require high-performance Focal Plane Arrays (FPAs) operating in all ranges of the IR spectrum. Short wavelength (SWIR; 1 to 3 micrometer), middle wavelength (MWIR; 3 to 5 micrometer), mid- long wavelength (MLWIR; 6 to 8 micrometer), long wavelength (LWIR; 8 to 14 micrometer), and very long wavelength (VLWIR; greater than 14 micrometer). These diverse spectral bands require high performance detectors and Read Out Integrated Circuits (ROICs) to perform the multi-spectral mission requirements. Significant progress in the design and fabrication of HgCdTe detector arrays and Read Out Integrated Circuits (ROICs) over the past few years has led to the demonstration of high resolution, low noise and large format reliable FPAs. Hybrid FPAs have been measured and their performance parameters are presented. Focal Plane Array D* performance values have been obtained for a multitude of spectral ranges and configurations that include; (1) (lambda) _c equals 1.8 micrometer, 12 X 256 arrays operating at 295 K with median D* approximately 1.4 X 10¹² cm Hz^1/2/W, (2) (lambda) _c equals 2.4 micrometer, 12 X 256 arrays operating at 250 K with median D* equals 1.6 X 10¹² cm Hz^1/2/W, detectors used are grown by MBE on lattice matched CdZnTe, (3) PACE-1 detectors with (lambda) _c equals 2.5 micrometer, 1024 X 1024 arrays operating at 115 K with peak D* of 2.3 X 10¹³ cm Hz^1/2/W at a background flux (phi) _b equals 1.2 X 10¹¹ ph/cm²- s, (4) MBE HgCdTe on Silicon MWIR detectors have been fabricated and the detector R_oA performance for (lambda) _co approximately 5.0 micrometer is in the 10⁶ to 10⁷ ohm-cm² range at 78 K. (5) MBE HgCdTe on CdZnTe detectors, ((lambda) _c equals 15.8 micrometer at 65 K), 128 X 128 array operating at 40 K with peak D* of 2.76 X 10¹¹ cm Hz^1/2/W at a background flux (phi) _b equals 8.0 X 10¹⁵ ph/cm²-s. High performance 640 X 480 arrays imaging in the MWIR band have been fabricated on CdZnTe and PACE-1 substrates. The performance of these and additional FPAs will be presented.

Proceedings Article | 23 October 1997 Paper

Laser reflectance monitoring of the nucleation and growth of CdTe on basal plane sapphire substrates for focal plane arrays

A. Stafford, Stuart Irvine, K. Hess, Jagmohan Bajaj, R. Harper, P. Prete

Proceedings Volume 3122, (1997) https://doi.org/10.1117/12.279002

KEYWORDS: Reflectivity, Sapphire, Staring arrays, Scattering, Laser scattering, Helium neon lasers, Feedback control, Reflectometry, Temperature metrology, Sensors

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The nucleation of CdTe onto basal plane sapphire and the subsequent growth of a CdTe buffer layer has been studied using in-situ laser reflectance (probe wavelength 633 nm, HeNe laser). The production of midwave infrared focal plane arrays requires the growth of typically 10 micrometer of CdTe (111)B buffer layer in order to grow out problems due to stacking faults, dislocation clusters and twinning. A-face and B-face growth of CdTe is seen to produce different reflectance 'signatures' within the first 6000 angstroms of growth, so enabling the early identification of problems with the growth process. Laser reflectance was also successfully demonstrated to predict the thickness of the buffer layer. Oscillations in the laser reflectance are attenuated due to absorption by the film at the probe wavelength used after approximately 6000 angstrom. However by the on-line calculation of the growth rate at every half wavelength oscillation, it is possible to extrapolate a film thickness for the total growth time. This extrapolated value is seen to be in good agreement with the thickness calculated ex-situ by beta-back scattering. The dependence on the buffer layer growth on the nucleation conditions was also investigated. The determination of whether the buffer layer grows A-face or B-face is seen to be more influenced by the II:VI ratio than the temperature during nucleation. For a nucleation temperature of 400 degrees Celsius, with a II:VI ratio of 6:1 the growth of the buffer layer is seen to be 100% A-face. As the II:VI ratio is increased the degree of A-face growth is seen to decline and the material becomes dominated by B-face growth. At a II:VI ratio of 60:1 the material is entirely B-face and predominantly untwinned. The difference in the two growth modes is manifested in the laser reflectance. Greater scattering of the laser light occurs during B-face growth due to the increased roughening compared to A-face growth. Consequently the reflectance signal in the B-face signature is seen to fall away more rapidly than is the case with A-face growth.

SPIE Journal Paper | 1 May 1997

Micro-optic integration with focal plane arrays

M. Edward Motamedi, William Tennant, Haluk Sankur, Robert Melendes, Natalie Gluck, Sangtae Park, Jose Arias, Jagmohan Bajaj, John Pasko, William McLevige, Majid Zandian, Randolph Hall, Karla Steckbauer, Patti Richardson

OE, Vol. 36, Issue 05, (May 1997) https://doi.org/10.1117/12.10.1117/1.601347

KEYWORDS: Microlens, Photoresist materials, Sensors, Diodes, Microlens array, Micro optics, Diffraction, Thin films, Staring arrays, Quantum efficiency

Proceedings Article | 27 June 1996 Paper

MBE flexible manufacturing for HgCdTe focal plane arrays

J. Benson, John Dinan, James Waterman, Christopher Summers, Rudolph Benz, Brent Wagner, S. Pearson, Ashesh Parikh, John Jensen, Owen Wu, Rajesh Rajavel, G. Kamath, Karl Harris, Steven Jost, Jose Arias, Lester Kozlowski, Majid Zandian, Jagmohan Bajaj, Kadri Vural, Roger DeWames, Charles Cockrum, G. Venzor, Scott Johnson, H.-D. Shih, M. Bevan, J. Dodge, Art Simmons

Proceedings Volume 2744, (1996) https://doi.org/10.1117/12.243457

KEYWORDS: Staring arrays, Manufacturing, Liquid phase epitaxy, Mercury cadmium telluride, Semiconducting wafers, Sensors, Detector arrays, Heterojunctions, Infrared radiation, Detector development

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Proceedings Article | 8 March 1996 Paper

FPAs and thin film binary optic microlens integration

M. Edward Motamedi, William Tennant, Robert Melendes, Natalie Gluck, Sangtae Park, Jose Arias, Jagmohan Bajaj, John Pasko, William McLevige, Majid Zandian, Randolph Hall, Karla Steckbauer, Patti Richardson, Donald Cooper

Proceedings Volume 2687, (1996) https://doi.org/10.1117/12.234638

KEYWORDS: Microlens, Diffraction, Sensors, Thin films, Diodes, Microlens array, Photoresist materials, Photomasks, Quantum efficiency, Lenses

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The relatively large detector size of conventional focal plane arrays often acts as a limiting source of noise currents and requires these devices to run at undesirably low temperatures. To reduce the detector size without reducing the detector's quantum efficiency, we have developed efficient on-focal plane collection optics consisting of arrays of thin film binary optic microlenses on the back surface of hybrid detector array structures. P/n polarity photodiodes of an unusual `planar-mesa' geometry were fabricated in epitaxial HgCdTe deposited by molecular beam epitaxy on the `front' side of a CdZnTe substrate. Diffractive (8 - 16 phase level) Ge microlenses were deposited on 48 micrometers centers in a registered fashion (using an IR mask aligner and appropriate marks on the front surface of the CdZnTe) on the back side of the substrate using a lifting process. The lifting process circumvents some of the process limitations of the more conventional chemical etching method to diffractive microlens processing, allowing them to approach more closely their theoretical efficiency limit of > 95%. Prior to microlens deposition, but after diode fabrication, the test structures were flip- chip bonded or `hybridized' using indium interconnections to metallic strip lines which had been photolithographically deposited on sapphire dice (a process equally compatible with a silicon integrated circuit readout). After hybridization, the CdZnTe was thinned to equal the focal length of the lenses in the CdZnTe material. Optical characterization has demonstrated that the microlenses combined with the detector mesas concentrate light sufficiently to increase the effective collection area. The optical size of the mesa detectors being larger than the theoretical diffraction limit of the microlenses precludes determining whether the lenses themselves produce the theoretical diffraction-limited gain, but they clearly decrease required detector area by at least 3 - 6X. To our knowledge, this is the first successful demonstration of IR detectors and binary optics microlens integration.

Proceedings Article | 7 October 1994 Paper

MBE HgCdTe infrared focal plane array (IRFPA) flexible manufacturing

Jose Arias, Majid Zandian, John Pasko, Jagmohan Bajaj, Lester Kozlowski, William Tennant, Roger DeWames

Proceedings Volume 2274, (1994) https://doi.org/10.1117/12.189243

KEYWORDS: Long wavelength infrared, Mercury cadmium telluride, Diodes, Manufacturing, Staring arrays, Heterojunctions, Databases, Information operations, Mercury, Arsenic

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Proceedings Article | 7 October 1994 Paper

Point defects in HgCdTe by deep-level transient spectroscopy (DLTS)

Jose Colon, Jagmohan Bajaj, Jose Arias, Majid Zandian, John Pasko

Proceedings Volume 2274, (1994) https://doi.org/10.1117/12.189247

KEYWORDS: Mercury cadmium telluride, Diodes, Liquid phase epitaxy, Capacitance, Temperature metrology, Spectroscopy, Chlorine, Electroluminescence, Heterojunctions, Semiconducting wafers

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Proceedings Article | 7 October 1994 Paper

Recent progress with in-situ monitoring of mercury cadmium telluride (MCT) growth

Stuart Irvine, Jagmohan Bajaj

Proceedings Volume 2274, (1994) https://doi.org/10.1117/12.189246

KEYWORDS: Temperature metrology, Pyrometry, Spectroscopic ellipsometry, Reflectivity, Gallium arsenide, Reflection, Spectroscopy, Mercury, Reflectance spectroscopy, Semiconducting wafers

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Proceedings Article | 15 July 1994 Paper

Study of deep levels in MBE-grown HgCdTe photodiodes by deep level transient spectroscopy

Jose Colon, Samuel Lakeou, Jagmohan Bajaj, Jose Arias, Majid Zandian, John Pasko

Proceedings Volume 2225, (1994) https://doi.org/10.1117/12.179700

KEYWORDS: Spectroscopy, Mercury cadmium telluride, Photodiodes, Cadmium, Mercury, Tellurium, Heterojunctions, Diodes, Molecular beam epitaxy, Semiconducting wafers

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Proceedings Article | 13 July 1994 Paper

Molecular beam epitaxy (MBE) HgCdTe flexible growth technology for the manufacturing of infrared photovoltaic detectors

Jose Arias, John Pasko, Majid Zandian, Jagmohan Bajaj, Lester Kozlowski, Roger DeWames, William Tennant

Proceedings Volume 2228, (1994) https://doi.org/10.1117/12.179662

KEYWORDS: Mercury cadmium telluride, Molecular beam epitaxy, Manufacturing, Infrared detectors, Infrared photography, Infrared radiation, Photovoltaic detectors, Long wavelength infrared, Heterojunctions, Photovoltaics

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