The search for nano-scaled light sources and detectors, with an emission/absorption precisely controlled through the design of their morphology and structure, is fundamental for developing new synthesis and fabrication solutions in optoelectronics. In this context, a core-shell heterostructure with promising applications in telecommunications serves as an example to demonstrate the technical capabilities available at the hard x-ray nanoprobe beamline ID16B of the European Synchrotron Radiation Facility (ESRF) for characterizing optically active nanomaterials. The proposed case study focuses on an InGaAs/InP Multi-Quantum Well (MQW) structure grown with a perfectly hexagonal shape onto InP Nanowires (NWs). Nano-characterization, using a combination of X-Ray Fluorescence (XRF), X-ray Near Edge Spectroscopy (XANES), and X-ray Excited Optical Luminescence (XEOL) techniques, was conducted to locally probe the elemental homogeneity at the deep submicrometric scale and investigate the local optical properties and their correlations with the phase structure and defects.
Annealings have been performed on Ge0.84Sn0.16 microstructures in order to improve their optical properties by reducing the number of defects at the origin of Sn segregation. An enhancement of the photoluminescence intensity by a factor of 2.4 for annealed microstructures compared to ones without annealing was for instance achieved. Different annealing temperatures were tested to limit Sn segregation above the epitaxy temperature.
A novel approach of characterizing nano-scaled luminescent materials using time-resolved X-ray excited optical luminescence (TR-XEOL) is presented. With the unique possibility to combine nanoscale spatial and pico-second temporal resolution, we investigate perovskite nanowires with exceptional precision. Integrated X-ray fluorescence spectroscopy in combination with TR-XEOL enables correlating carrier dynamics with material composition at the nanoscale. In this study, we focus on CsPbBr3 nanowires, potential X-ray scintillators, studying the influence of degradation effects on the recombination dynamics. This new experimental approach holds promise for advancing optoelectronic and, especially, nano-photonic materials.
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