We examined the potential of amorphous Ge-Bi-Se chalcogenide films prepared from RF magnetron co-sputtering.(Co)-sputtered films’ compositions were analysed using EDX spectroscopy. Pre-deposition calculations were used to find the expected composition, and a good agreement with experimentally determined compositions were observed. The amorphous to crystalline phase change in films were closely examined by XRD analysis and Raman spectroscopy in terms of atomic % of Ge by slowly increasing the GeSe2 contribution during co-sputtering. The influence of the composition on the optical band gap energy, refractive index and transmission spectra were also analysed using variable angle spectroscopic ellipsometry(VASE) and spectrophotometry analysis from visible to mid-IR. Third-order nonlinear optical parameters of the co-sputtered films were estimated using Sheik-Bahae formalism. The ridge waveguides were fabricated from RF magnetron co-sputtered Ge-Bi-Se films on Si/SiO2 substrate to obtain single-mode waveguides at 1.55 μm.
Financial support from Czech Science Foundation and European Union’s Horizon Europe Framework Programme under grant agreement No 101092723 is greatly acknowledged.
Due to remarkable properties of the chalcogenide glasses, especially sulphide glasses, amorphous chalcogenide films
should play a motivating role in the development of integrated planar optical circuits and their components. This paper
describes the fabrication and properties of optical waveguides of pure and rare earth doped sulphide glass films prepared
by two complementary techniques: RF magnetron sputtering and pulsed laser deposition (PLD). The deposition
parameters were adjusted to obtain, from sulphide glass targets with a careful control of their purity, layers with
appropriate compositional, morphological, structural characteristics and optical properties. These films have been
characterized by micro-Raman spectroscopy, atomic force microscopy (AFM), X-ray diffraction technique (XRD) and
scanning electron microscopy (SEM) coupled with energy dispersive X-ray measurements (EDX). Their optical
properties were measured thanks to m-lines prism coupling and near field methods. Rib waveguides were produced by
dry etching under CF4, CHF3 and SF6 atmosphere. The photo-luminescence of rare earth doped GeGaSbS films were
clearly observed in the n-IR spectral domain and the study of their decay lifetime will be presented. First tests were
carried out to functionalise the films with the aim of using them as sensor.
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