Mr. Jeff J. Meute Profile

Jeff J. Meute

Project Manager at Sematech Inc

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Author

Publications (15)

Proceedings Article | 21 March 2006 Paper

The capability of a 1.3-NA μstepper using 3D EMF mask simulations

Will Conley, Jeff Meute, James Webb, Douglas Goodman, Robert Maier

Proceedings Volume 6154, 61542Y (2006) https://doi.org/10.1117/12.659684

KEYWORDS: Polarization, 3D modeling, Photomasks, Image resolution, Lithography, 3D image processing, Refraction, Imaging systems, Lithographic illumination, Birefringence

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Proceedings Article | 28 June 2005 Paper

The capability of a 1.3NA µstepper using 3D EMF mask simulations

Will Conley, Jeff Meute, James Webb, Douglas Goodman, Robert Maier

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617224

KEYWORDS: Polarization, 3D modeling, Photomasks, Image resolution, Lithography, 3D image processing, Refraction, Lithographic illumination, Imaging systems, Birefringence

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Proceedings Article | 28 May 2004 Paper

Correction of 157-nm lens based on phase ring aberration extraction method

Jeff Meute, Georgia Rich, Will Conley, Bruce Smith, Lena Zavyalova, Julian Cashmore, Dominic Ashworth, James Webb, Lisa Rich

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.544256

KEYWORDS: Monochromatic aberrations, Wavefronts, Optics manufacturing, Manufacturing, Optical alignment, Birefringence, Phase measurement, Lithography, Reticles, Error analysis

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Proceedings Article | 14 May 2004 Paper

Effects of airborne molecular contamination on 157nm resists: AMC friend or foe?

Jeff Meute, Georgia Rich, Karen Turnquest, Kim Dean, Shashikant Patel, Victoria Graffenberg, Michael Rodriguez

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.537652

KEYWORDS: Semiconducting wafers, Lithography, Contamination, Photoresist processing, Real-time computing, Photoresist materials, Statistical analysis, Environmental sensing, Spectroscopy, Scanning electron microscopy

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Proceedings Article | 17 December 2003 Paper

157-nm alternating phase-shifting mask design and high-NA images

Yung-Tin Chen, Jeff Meute, Kim Dean, Peter Brooker

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518310

KEYWORDS: Photomasks, Etching, Phase shifting, Scanning electron microscopy, Neodymium, Semiconducting wafers, Critical dimension metrology, Phase shifts, Polarization, Reticles

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Proceedings Article | 26 June 2003 Paper

Image performance and mask characterization of 157-nm alternating phase-shifting mask

Yung-Tin Chen, Jeff Meute, Kim Dean, David Stark, Christof Schilz, Wolfgang Dettmann, Roderick Koehle, Bettina Schiessl, Wolfgang Degel

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485519

KEYWORDS: Photomasks, Etching, Critical dimension metrology, Semiconducting wafers, Phase shifts, Scanning electron microscopy, Phase measurement, Image processing, Image analysis, Monochromatic aberrations

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Proceedings Article | 30 July 2002 Paper

Contamination and degradation of 157-nm stepper optical components: field experience at International SEMATECH

Jeff Meute, Georgia Rich, Stefan Hien, Kim Dean, Carolyn Gondran, Julian Cashmore, Dominic Ashworth, James Webb, Lisa Rich, Paul Dewa

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474621

KEYWORDS: Fiber optic illuminators, Contamination, Optical components, Objectives, Semiconducting wafers, Mirrors, Reticles, Lithography, Wafer-level optics, Failure analysis

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Proceedings Article | 30 July 2002 Paper

Aberration determination in early 157-nm exposure system

Bruce Smith, Will Conley, Cesar Garza, Jeff Meute, Daniel Miller, Georgia Rich, Victoria Graffenberg, Kim Dean, Shashikant Patel, Arnie Ford, James Foster, Marco Moers, Kevin Cummings, James Webb, Paul Dewa, Azeddine Zerrade, Susan MacDonald, Greg Hughes, Peter Dirksen

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474551

KEYWORDS: Photomasks, Monochromatic aberrations, Scanning electron microscopy, Image processing, Lithography, Manufacturing, Imaging systems, Wavefronts, Zernike polynomials, Edge detection

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Proceedings Article | 24 July 2002 Paper

Characterization and acid diffusion measurements of new strong acid photoacid generators

Gregory Wallraff, Carl Larson, Nicolette Fender, Blake Davis, David Medeiros, Jeff Meute, William Lamanna, Mike Parent, T. Robeledo, Gregory Young

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474215

KEYWORDS: Polymers, Diffusion, Polymer thin films, Semiconducting wafers, Photoresist materials, Silicon, Temperature metrology, Absorbance, Laser phosphor displays, Chemically amplified resists

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Proceedings Article | 30 December 1999 Paper

Comparison of DNQ/novolac resists for e-beam exposure

Theodore Fedynyshyn, Scott Doran, Michele Lind, Theodore Lyszczarz, William DiNatale, Donna Lennon, Charles Sauer, Jeff Meute

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373357

KEYWORDS: Performance modeling, Photoresist processing, Mask making, Electron beam lithography, Lithography, Photomasks, Optical simulations, Monte Carlo methods, Statistical analysis, Electron beams

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Proceedings Article | 11 June 1999 Paper

193-nm single-layer process for 150-nm technology generation and below

Gilles Amblard, Peter Zandbergen, Martin McCallum, Alan Stephen, Jeff Byers, Kim Dean, Jeff Meute, Carla Nelson-Thomas

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350270

KEYWORDS: Photoresist processing, Reflectivity, Lithography, Silicon, Semiconducting wafers, 193nm lithography, Photomasks, Binary data, Phase shifts, Organic materials

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Proceedings Article | 11 June 1999 Paper

Development of an incremental structural parameter model for predicting reactive ion etch rates of 193-nm photoresist polymer platforms

Thomas Wallow, Phillip Brock, Richard Di Pietro, Robert Allen, Juliann Opitz, Ratnam Sooriyakumaran, Donald Hofer, Ann Mewherter, Yuping Cui, Wendy Yan, G. Worth, Wayne Moreau, Jeff Meute, Jeff Byers, Georgia Rich, Martin McCallum, Saikumar Jayaraman, Richard Vicari, Joy Cagle, Shenliang Sun, Karen Hullihen

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350211

KEYWORDS: Etching, Polymers, Reactive ion etching, Photoresist materials, Oxides, Carbon, Photoresist developing, Chemical species, Ions, Data modeling

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Proceedings Article | 11 June 1999 Paper

Screening of DNQ/novolac resists with e-beam exposure

Theodore Fedynyshyn, Scott Doran, Michele Lind, Theodore Lyszczarz, William DiNatale, Donna Lennon, Charles Sauer, Jeff Meute

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350180

KEYWORDS: Mask making, Scanning electron microscopy, Electron beam lithography, Performance modeling, Lithography, Photomasks, Photoresist processing, Electron beams, Quartz, Monte Carlo methods

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Proceedings Article | 29 June 1998 Paper

Reactive ion etching of 193-nm resist candidates: current platforms and future requirements

Thomas Wallow, Phillip Brock, Richard Di Pietro, Robert Allen, Juliann Opitz, Ratnam Sooriyakumaran, Donald Hofer, Jeff Meute, Jeff Byers, Georgia Rich, Martin McCallum, S. Schuetze, Saikumar Jayaraman, Karen Hullihen, Richard Vicari, Larry Rhodes, Brian Goodall, Robert Shick

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312362

KEYWORDS: Etching, Polymers, Reactive ion etching, Oxides, Photoresist materials, Photoresist processing, Carbon, Resistance, Chemical reactions, Control systems

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Proceedings Article | 29 June 1998 Paper

Aberration evaluation and tolerancing of 193-nm lithographic objective lenses

Bruce Smith, James Webb, John Petersen, Jeff Meute

Proceedings Volume 3334, (1998) https://doi.org/10.1117/12.310756

KEYWORDS: Nanoimprint lithography, Image processing, Photoresist processing, Monochromatic aberrations, Lithography, Lenses, Photoresist materials, Tolerancing, Lens design, Spherical lenses

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Showing 5 of 15 publications

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