Prof. Jia-Han Li Profile

Prof. Jia-Han Li

at National Taiwan Univ

SPIE Involvement:

Author

Publications (15)

Proceedings Article | 10 August 2023 Presentation + Paper

Using singular value decomposition to study near electromagnetic field of the 3D through silicon via array with high aspect ratio

Song-En Chen, Chih-Chung Wang, Jia-Han Li

Proceedings Volume 12619, 126190I (2023) https://doi.org/10.1117/12.2673676

KEYWORDS: Singular value decomposition, Matrices, Near field, Silicon, Electromagnetism, Finite-difference time-domain method, Data analysis, Computer simulations, Reflection, Databases

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Proceedings Article | 27 April 2023 Poster + Paper

Numerical study of electromagnetic properties of the 3D through silicon via with high aspect ratio

Song-En Chen, Chih-Chung Wang, Hung-Wei Hsu, Yen-Ting Wu, Jia-Han Li

Proceedings Volume 12496, 124962J (2023) https://doi.org/10.1117/12.2657818

KEYWORDS: Silicon, Electromagnetism, Reflectometry, Reflection, Finite-difference time-domain method, Reflectance spectroscopy, Semiconducting wafers, Etching

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SPIE Journal Paper | 27 April 2021

Precision fabrication of EUVL programmed defects with helium ion beam patterning

Chien-Lin Lee, Jia-Syun Cai, Sheng-Wei Chien, Kuen-Yu Tsai, Jia-Han Li, Chao-Te Lee

JM3, Vol. 20, Issue 02, 023001, (April 2021) https://doi.org/10.1117/12.10.1117/1.JMM.20.2.023001

KEYWORDS: Optical lithography, Palladium, Helium, Ion beams, Direct write lithography, Metrology, Extreme ultraviolet lithography, Lithography, Silicon, Glasses

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Proceedings Article | 28 March 2017 Presentation + Paper

Fabrication of metrology test structures with helium ion beam direct write

Chien-Lin Lee, Sheng-Wei Chien, Sheng-Yung Chen, Chun-Hung Liu, Kuen-Yu Tsai, Jia-Han Li, Bor-Yuan Shew, Chit-Sung Hong, Chao-Te Lee

Proceedings Volume 10145, 1014519 (2017) https://doi.org/10.1117/12.2257989

KEYWORDS: Metrology, Electron beam lithography, Lithography, Helium, Ion beams, Critical dimension metrology, Inspection, Photoresist processing, Optical lithography, Bridges

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Proceedings Article | 2 April 2014 Paper

Direct-scatterometry-enabled PEC model calibration with two-dimensional layouts

Yi-Yeh Yang, Hsuan-Ping Lee, Chun-Hung Liu, Hao-Yun Yu, Kuen-Yu Tsai, Jia-Han Li

Proceedings Volume 9050, 905032 (2014) https://doi.org/10.1117/12.2048683

KEYWORDS: Calibration, Lithography, Scatterometry, Semiconducting wafers, Light scattering, 3D modeling, Diffraction, Scattering, Photoresist processing, Process control

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SPIE Journal Paper | 6 December 2013

Void-based photonic crystal mirror with high reflectivity and low dissipation for extreme-ultraviolet radiation

Yen-Min Lee, Jia-Han Li, Kuen-Yu Tsai

JM3, Vol. 12, Issue 04, 043005, (December 2013) https://doi.org/10.1117/12.10.1117/1.JMM.12.4.043005

KEYWORDS: Silicon, Reflectivity, Molybdenum, Mirrors, Absorption, Extreme ultraviolet, Photonic crystals, Chromium, Lithium, Extreme ultraviolet lithography

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Proceedings Article | 18 April 2013 Paper

Direct-scatterometry-enabled optical-proximity-correction-model calibration

Chih-Yu Chen, Philip C. W. Ng, Chun-Hung Liu, Yu-Tian Shen, Kuen-Yu Tsai, Jia-Han Li, Jason Shieh, Alek Chen

Proceedings Volume 8681, 86810U (2013) https://doi.org/10.1117/12.2009064

KEYWORDS: Calibration, Lithography, Optical proximity correction, Data modeling, Signal processing, Scatterometry, Process control, Photomasks, Process modeling, Systems modeling

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Proceedings Article | 5 April 2012 Paper

Electron-beam proximity effect model calibration for fabricating scatterometry calibration samples

Yu-Tian Shen, Chun-Hung Liu, Chih-Yu Chen, Hoi-Tou Ng, Kuen-Yu Tsai, Fu-Ming Wang, Chieh-Hsiung Kuan, Yen-Min Lee, Hsin-Hung Cheng, Jia-Han Li, Alek Chen

Proceedings Volume 8324, 83242K (2012) https://doi.org/10.1117/12.918109

KEYWORDS: Calibration, Line edge roughness, Scatterometry, Point spread functions, Process modeling, Scanning electron microscopy, Metrology, Scattering, Semiconducting wafers, Cadmium

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Proceedings Article | 5 April 2012 Paper

Direct-scatterometry-enabled lithography model calibration

Chih-Yu Chen, Kuen-Yu Tsai, Yu-Tian Shen, Yen-Min Lee, Jia-Han Li, Jason Shieh, Alek Chen

Proceedings Volume 8324, 83241R (2012) https://doi.org/10.1117/12.917516

KEYWORDS: Lithography, Diffraction, Calibration, Scatterometry, Process modeling, Metrology, Diffraction gratings, Image processing, Data modeling, Scatter measurement

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Optical scatterometry is crucial to advanced nodes due to its ability of non-destructively and rapidly retrieving accurate 3D profile information.^{1, 2, 3} In recent years, an angle-resolved polarized reflectometry-based scatterometry which can measure critical dimensions, overlay, and focus in single shot has been developed.^{4, 6, 20} In principle, a microscope objective collects diffracted light, and pupil images are collected by a detector. For its application of calibrating lithography models, the pupil images are fit to a database pre-characterized usually by rigorous electromagnetic simulation to estimate dimensional parameters of developed resist profiles.⁵ The estimated dimensional parameters can then be used for lithography model calibration. In this work, we propose a new method which directly utilizes the pupil images to calibrate lithography models without needing dimensional parameter estimation. To test its feasibility and effectiveness by numerical simulation, a reference lithography process model is first constructed with a set of parameter values complying with ITRS. A to-be-calibrated process model is initialized with a different set of parameter values from those of the reference model. Rigorous electromagnetic simulation is used to obtain the pupil images of the developed resist profiles predicted by both process models. An optimization algorithm iteratively reduces the difference between the pupil images by adjusting the set of parameter values of the to-be-calibrated process model until the pupil image difference satisfies a predefined converging criterion. This method can be used to calibrate both rigorous first-principle models for process and equipment development and monitoring, and fast kernel-based models for full-chip proximity effect simulation and correction. Preliminary studies with both 1D and 2D aperiodic and periodic layouts indicate that when the pupil image difference is minimized, the lithography model can be accurately calibrated.

SPIE Journal Paper | 1 April 2011

Errata: Fully model-based methodology for simultaneous correction of extreme ultraviolet mask shadowing and proximity effects

Kuen-Yu Tsai, Yen-Min Lee, Alek Chen, Philip Ng, Fu-Min Wang, Jia-Han Li

JM3, Vol. 10, Issue 02, 029801, (April 2011) https://doi.org/10.1117/12.10.1117/1.3576188

SPIE Journal Paper | 1 January 2011

Fully model-based methodology for simultaneous correction of extreme ultraviolet mask shadowing and proximity effects

Philip Ng, Kuen-Yu Tsai, Yen-Min Lee, Fu-Min Wang, Jia-Han Li, Alek Chen

JM3, Vol. 10, Issue 1, 013004, (January 2011) https://doi.org/10.1117/12.10.1117/1.3533222

KEYWORDS: Photomasks, Model-based design, 3D modeling, Extreme ultraviolet, Optical proximity correction, Process modeling, Computer simulations, Projection lithography, Scanners, Extreme ultraviolet lithography

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SPIE Journal Paper | 1 October 2010

Efficient scattering simulations for equivalent extreme ultraviolet mask multilayer structures by modified transmission line theory and finite-difference time-domain method

Yen-Min Lee, Jia-Han Li, Philip Ng, Ting-Hang Pei, Fu-Min Wang, Kuen-Yu Tsai, Alek Chen

JM3, Vol. 9, Issue 04, 043003, (October 2010) https://doi.org/10.1117/12.10.1117/1.3503532

KEYWORDS: Extreme ultraviolet, Finite-difference time-domain method, Reflectivity, Refractive index, Scattering, Computer simulations, Silicon, Photomasks, Molybdenum, Surface roughness

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Proceedings Article | 23 March 2010 Paper

Stochastic simulation of photon scattering for EUV mask defect inspection

Ting-Hang Pei, Kuen-Yu Tsai, Jia-Han Li

Proceedings Volume 7636, 763624 (2010) https://doi.org/10.1117/12.846695

KEYWORDS: Scattering, Extreme ultraviolet, Photomasks, Silicon, Light scattering, Defect inspection, Reflectivity, Inspection, Stochastic processes, Signal detection

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Proceedings Article | 12 December 2009 Paper

Using transmission line theory to calculate equivalent refractive index of EUV mask multilayer structures for efficient scattering simulation by finite-difference time-domain method

Yen-Min Lee, Jia-Han Li, Philip Ng, Ting-Han Pei, Fu-Min Wang, Kuen-Yu Tsai, Alek Chen

Proceedings Volume 7520, 75200W (2009) https://doi.org/10.1117/12.837150

KEYWORDS: Finite-difference time-domain method, Extreme ultraviolet, Computer simulations, Reflectivity, Refractive index, Error analysis, Scattering, Molybdenum, Silicon, Surface roughness

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Proceedings Article | 11 December 2009 Paper

A fully model-based methodology for simultaneously correcting EUV mask shadowing and optical proximity effects with improved pattern transfer fidelity and process windows

Philip C. W. Ng, Kuen-Yu Tsai, Yen-Min Lee, Ting-Han Pei, Fu-Min Wang, Jia-Han Li, Alek Chen

Proceedings Volume 7520, 75200S (2009) https://doi.org/10.1117/12.837077

KEYWORDS: Photomasks, Model-based design, 3D modeling, Optical proximity correction, Semiconducting wafers, Computer simulations, Extreme ultraviolet, Process modeling, Extreme ultraviolet lithography, Image segmentation

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Showing 5 of 15 publications

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