GaN based edge-emitting lasers traditionally rely on index contrast from InGaN or AlGaN cladding for modal confinement. However, defects introduced by lattice mismatch limit the feasible composition and layer thickness of alloyed cladding layers. Alternatively, porous GaN offers high refractive index contrast while remaining lattice-matched, making it a suitable candidate for cladding in green lasers. Edge-emitting laser diodes with nano-porous cladding were fabricated and reached electrical injection at 524 nm. In this work, a deep ridge waveguide structure was used to improve electrochemical etch selectivity of the porous cladding, resulting in higher efficiency and lower loss compared to shallow ridge devices.
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