NbSe2, serving as a 2D metal electrode, has been proven to form a Schottky heterojunction with MoSe2 to realize a highperformance broadband photodetector. Here, we further investigated the effect of gate voltage on the optoelectronic characteristics of the device. The results revealed that NbSe2 exhibits a weak electrostatic screening effect similar to graphene, and due to the high-quality contact between the 2D metal and semiconductor, the rectification ratio of the device can be significantly modulated from 0.32 to 5.5×104. Regarding the photovoltaic response characteristics of the device, the gate voltage similarly achieves significant modulation of the short-circuit current (20 nA-1.6 μA), open-circuit voltage (0-0.32 V), maximum electrical power (0-210 nW). Furthermore, the response speed of the device is also influenced by the gate voltage. This work demonstrates that Schottky heterojunctions constructed based on 2D metals can achieve effective control of optoelectronic properties, and has encouraging prospects in the fields of optical communications, optical sensing, and imaging.
Terahertz focal plane array imaging technology can realize real-time terahertz imaging with high frame rate. But for a relatively large-sized object imaging, the array scanning should collect a plurality of original image data due to the small-sized focal plane terahertz detector array. In this paper we demonstrate terahertz image preprocessing, image register and image blending in detail. In order to reduce the image noise and enhance the image contrast, we manifest a novel method to preprocess the image by incorporating of Butterworth band-elimination filter and high-frequency nonlinear enhancement methods. Meanwhile, the enhanced image is stitched using the sift algorithm. The experimental result present that the proposed method can accurately mosaic the terahertz grayscale image, which is beneficial to realize the scanning and stitching imaging of large-area objects by focal plane array terahertz detector.
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