Nowadays, the Von Neumann computing structure, which separates storage and computation, limits the rate of data processing. There is an urgent need to design chips with integrated storage and computation functions to avoid the problem of data transportation fundamentally and reduce the time needed for transmission. Inspired by the integration of neurons and synapses in the human brain with storage and computation, people began to study brain-like chips. Synapse simulation is the key to the manufacture of brain-like chips, in which photoelectric synapses have the advantages of low crosstalk, large bandwidth, low latency and low power consumption, but also simulate human vision, which has become a hot spot of synapse research. In this thesis, photoelectrical synaptic devices with the structures of ITO/BST:Ag/SiO2/P-Si/ITO were fabricated by magnetron sputtering method. The synaptic performance and the working principle of the device was investigated. Finally, this article randomly selects 25 ITO/BST: Ag/SiO2/P-Si/ITO synaptic devices to form a 5 × 5 array, ensuring that each unit device is isolated from each other and the current is not affected. Use light pulses with different parameters to excite each unit device, record the current value of the device, simulating the image memory function of the human eye.
The Switching mechanism of a-Si memristor is based on the electrochemical metallization (ECM) effect. After application of a constant bias, the metal ions oxidized on the surface of the electrode migrates to the amorphous silicon layer, which not only lead to the resistive switching behavior, but also the change of optical parameters of switching material. Here, a novel film memristor with optical readout functionality has been set up by combining a silicon prism with Ag/a-Si/Al structure. The attenuation of the reflected light from the device dependence on surface plasmon resonance (SPR) effect on interface of silver layer which is sensitive to the refractive index of the a-Si layer. The change of the reflectance spectrum of the memristor under different bias voltages was simulate by means of finite-difference time-domain (FDTD) method, and the influence of the thickness of the amorphous silicon film and the silver film on the intensity of the reflected light was analyzed.
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