The next generation technology and emerging memory devices require gradually tighter lithographic focus control on imaging critical layers. Especially in case of BEOL process, big PDO (Process Dependent Offset) from large intra-field topography steps affects the process margin directly. There are couple of scanner options to reduce PDO, such as AGILE which provides several benefits. However, for certain use cases the AGILE sensor may not be the optimal solution.
In this paper, we introduce the concept and development background of iFPC (intra-field Finger Print Correction). iFPC is a scanner option that removes the generic 3D fingerprint seen in the leveling data so that both process dependency and actual wafer topography are not followed during wafer exposure.
In addition, we compare the degree of process margin improvement when applying iFPC compared to that of AGILE on a critical layer. The achieved results demonstrate that by applying iFPC it is possible to gain an additional 15~20nm DoF. In other words, on this use case our feasibility suggests that by removing the generic 3D fingerprint seen in the leveling data, it is possible to achieve a better focus performance than when trying to follow the topography during scanning.
In conclusion, we found another good way to improve the process margin through this comparative experiment. Therefore, our next step will be to setup the methodology to select the use cases where iFPC is the optimal solution.
Shrinking pattern sizes dictate that scanner-to-scanner variations for HVM products shrink proportionally. This paper shows the ability to identify (a subset of) root causes for mismatch between ArF immersion scanners using scanner metrology. The root cause identification was done in a Samsung HVM factory using a methodology (Proximity Matching Budget Breakdown or PromaBB) developed by ASML. The proper identification of root causes-1 helps to select what combination of scanner control parameters should be used to reduce proximity differences of critical patterns while minimizing undesirable side effects from cross-compensation. Using PromaBB, the difference between predicted and measured CD mismatch was below 0.2nm. PromaBB has been proposed for HVM implementation at Samsung in combination with other ASML fab applications: Pattern Matcher Full Chip (PMFC), Image Tuner and FlexWave.
KEYWORDS: Semiconducting wafers, Metrology, Reticles, Signal processing, Control systems, Lithography, Scanners, Process control, Scanning electron microscopy, Computer simulations
This paper introduces to improve inter-field CDU with on-product focus control by diffraction based focus (DBF) method. For DBF target selection, a robust focus metrology for focus control was obtained, and the selected DBF target was integrated on each seven spot of a product reticle. For on-product focus control, previously on-product focus monitoring was performed, and the monitored lots showed a stable focus fingerprint. Based on the result, Z and Z/ Rx/Ry corrections per field on wafers were applied. Focus uniformity of controlled wafers was improved up to 29% in comparison with non-corrected ones. To demonstrate the improvement of inter-field CDU, Full CDs on wafers were measured by SEM. As a result, inter-field CDU for controlled wafers was improved by 16% (3σ) compared with noncontrolled wafers.
As design rule shrinks down, on-product focus control became more important since available depth of focus (DOF) is getting narrower and also required critical dimension uniformity (CDU) becomes tighter. Thus monitoring, control the scanner focus error and reducing the focus control budget of scanner are essential for the production. There are some critical layers which has so narrow DOF margin that hardly be processed on old model scanners. Our study mainly focused on the analysis of the scanner focus control budget of such layers. Among the contributors to the focus budget, inter-field focus uniformity was turned out to be the most dominant. Leveling accuracy and intra-field focus uniformity were also dominant.
Negative tone development (NTD) process with positive resist and organic solvent-based developer enhances image contrast and uses a light-field mask to make same feature in opposition to positive tone development (PTD). Due to extremely high transmission rate of a light-field mask, absorption of exposure energy on a mask becomes imperceptible. However, the exposure energy transmitted through the mask influences not only lens heating but also wafer heating. Overlay budget by wafer heating becomes a considerable amount in NTD process. In this paper, to clarify overlay change induced by wafer heating in NTD process, four different levels of exposure energy are applied and the overlay errors are deteriorated by increasing energy. Due to wafer heating, the remarkable correlation between Y-overlay errors and scanning direction are observed. Especially, Ty, RK8, and RK12 have mostly considerable correlation with scanning direction. In NTD process, to avoid this phenomenon, exposure energy has to be minimized. In case scanning direction dependency in overlay is not prevented by minimization of exposure energy, fingerprint correction in wafer field is able to reduce this overlay error.
We report that, based on our experimental data, lens heating (LH) impact on wafer image can be effectively controlled by using a computational method (cASCAL) on critical device layers with no request on tool time. As design rule shrinks down, LH control plays a key role in preventing the image deterioration caused by the LH-induced wavefront distortion during exposure. To improve LH prediction accuracy, 3-dimension structure of mask stack (M3D) is considered in calculating the electro-magnetic (EM) field that passes through the mask for full chip. Additionally, lens specific calibration (LSC) is performed on individual scanners to take the lens-to-lens variation into account. In data comparisons, we show that cASCAL performs very well as an ASCAL substitute, and that M3D and LSC improve the LH prediction accuracy of cASCAL.
In order to improve process control of the lithography process, enhanced On-board metrology, measuring of the light
source beam parameters with software solutions for monitoring, reporting and analyzing the light source's performance
has been introduced.
Multiple lasers in the field were monitored after installing of a new On-board metrology product called SmartPulse. It
was found that changes in beam parameters can be significantly reduced at major module change service events when
new service procedures and On-board metrology were used, while significant beam parameter shift and illumination
pupil changes were observed when On-board metrology was not available at service events, causing lengthy scanner
illumination pupil recalibration.
SmartPulseTM software from Cymer Inc. was used to monitor the variation of light source performance parameters,
including critical beam parameters, at wafer level resolution. Wafer CD was correlated to the recorded beam parameters
for about a month of operation, and both wafer CD and beam parameters showed stable performance when the light
source was operating at optimal conditions.
Maintaining the stability of all litho process parameters over time is crucial to ensuring consistent litho process yield
throughout the product lifetime. The sensitivity of litho process performance to variations in litho process parameters is
getting higher as processes use lower k1 and resist dimensions get smaller. The dependence of litho cell yield on a laser
parameter change was investigated through simulations of memory patterns for various k1 and process layers by varying
bandwidth control level of laser. The sensitivity of litho yield to laser bandwidth became higher when lower k1 imaging
was used. Different bandwidth control requirements were determined based on the difference in CD control requirement
of each layer as well as the difference in process window of the layout. Overall, tighter bandwidth control was required
as pattern size and k1 became smaller. Significant improvements in long term process stability were achieved after
implementation of low bandwidth variation operation at a production fab. Cymer's latest bandwidth control technology
fulfills bandwidth control requirement for the simulated 43nm DRAM case, which has 0.31 k1 with 1.35NA ArF
immersion lithography
Tighter CD control requirements of the smaller devices in modern semiconductor products demand control of all
potential sources of change in imaging characteristics. Bandwidth of ArF lasers is known to be one of the important
parameters to be controlled to improve CD control of wafers. CD changes of Device Critical Patterns for memory
products, for example spacing of DRAM isolation patterns, due to laser bandwidth changes were investigated through
simulations. The purpose of the simulation study was to find out if there are optimum combinations of layout and
illumination setting, if variations can be compensated by illumination adjustments and if the bandwidth performance of
the laser meets requirements. The simulations were carried out using Cymer proprietary methods for high accuracy
using improved laser spectrum sampling techniques[1]. Different CD behavior was observed for different combinations
of pattern layout, illumination and bandwidth. Preferred illumination settings were found which suppress CD changes
caused by bandwidth variation, especially for diffusion layer of DRAM layouts. Adjustment of illumination settings was
demonstrated to cancel out CD shifts due to bandwidth change for the diffusion layer case. For all example cases, which
demonstrated typical DRAM product conditions, simulation verified that the amount of CD shift can be controlled
within allowed tolerances if Cymer's ABS technology was used for bandwidth control.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.